Method for manufacturing semiconductor device
Provided is a method for manufacturing a semiconductor device, in which a mask layer, a buffer layer, and a first mandrel layer are sequentially stacked on a substrate including a first region and a second region. First mandrel patterns are formed on the buffer layer in the first region, and a second mandrel pattern covering the buffer layer in the second region is formed. A first spacer contacting side walls of the first mandrel pattern and the second mandrel pattern is formed on the buffer layer. The first mandrel patterns are removed. A buffer layer pattern and a preliminary mask pattern are formed on the substrate. The second mandrel pattern is removed. In addition, a mask pattern is formed. The buffer layer includes a material having lower electrical conductivity than the mask layer and having etching selectivity with respect to the mask layer.
1 . A method for manufacturing a semiconductor device, the method comprising:
sequentially stacking a mask layer, a buffer layer, a first mandrel layer, and a second mandrel layer on a first region and a second region of a substrate;
forming first mandrel patterns having a line shape while being spaced apart from each other on the first region and forming a second mandrel pattern covering the first mandrel layer on the second region, by patterning the second mandrel layer, wherein the first mandrel patterns and the second mandrel pattern are disposed on the first mandrel layer;
forming a first spacer contacting a side wall of each of the first mandrel patterns and a side wall of the second mandrel pattern on the first mandrel layer;
removing the first mandrel patterns;
forming third mandrel patterns having a line shape on the first region and forming a fourth mandrel pattern covering the buffer layer on the second region, by patterning the first mandrel layer by using the first spacer and the second mandrel pattern as an etching mask, wherein the third mandrel patterns and the fourth mandrel pattern are disposed on the buffer layer;
forming a second spacer contacting side walls of the third mandrel pattern and the fourth mandrel pattern on a top surface of the buffer layer;
removing the third mandrel patterns;
forming a buffer layer pattern and a preliminary mask pattern on the first region and the second region of the substrate by etching the buffer layer and a portion of the mask layer by using the second spacer and the fourth mandrel pattern as an etching mask;
removing the fourth mandrel pattern; and
forming a mask pattern by etching the preliminary mask pattern by using the buffer layer pattern as an etching mask,
wherein the buffer layer includes a material having an electrical conductivity lower than an electrical conductivity of the mask layer, and having etching selectivity with respect to the mask layer.
2 . The method of claim 1 ,
wherein the buffer layer includes a same material as the second spacer or a material having a same electrical conductivity as the second spacer.
3 . The method of claim 1 ,
wherein the second spacer includes silicon oxide, and
wherein the buffer layer includes an insulating material including a silicon-oxygen bond.
4 . The method of claim 3 ,
wherein the buffer layer includes silicon oxide or silicon oxynitride.
5 . The method of claim 1 ,
wherein each of the second spacer and the buffer layer are formed through an atomic layer deposition (ALD) process.
6 . The method of claim 1 ,
wherein the mask layer includes polysilicon.
7 . The method of claim 1 ,
wherein the mask layer and the first mandrel layer include a same material.
8 . The method of claim 1 ,
wherein the mask layer and the first mandrel layer include mutually different materials, and
where the first mandrel layer includes amorphous carbon.
9 . The method of claim 8 , further comprising:
forming a separation layer on the first mandrel layer.
10 . The method of claim 1 ,
wherein the forming of the buffer layer pattern and the preliminary mask pattern on the substrate, the removing of the fourth mandrel pattern, and the forming of the mask pattern by etching the preliminary mask pattern are performed in situ.
11 . The method of claim 1 ,
wherein the forming of the buffer layer pattern and the preliminary mask pattern on the substrate, the removing of the fourth mandrel pattern, and the forming of the mask pattern by etching the preliminary mask pattern are performed in situ.
12 . The method of claim 1 ,
wherein a width of the second mandrel pattern is greater than a width of each first mandrel pattern of the first mandrel patterns.
13 . A method for manufacturing a semiconductor device, the method comprising:
sequentially stacking a mask layer, a buffer layer, a first mandrel layer, a separation layer, and a second mandrel layer on a first region and a second region of a substrate;
forming first mandrel patterns having a line shape while being spaced apart from each other on the first mandrel layer on the first region and forming a second mandrel pattern covering the first mandrel layer on the second region, by patterning the second mandrel layer, wherein the first mandrel patterns and the second mandrel pattern are disposed on the first mandrel layer;
forming a first spacer contacting a side wall of each of the first mandrel patterns and a side wall of the second mandrel pattern on the first mandrel layer;
removing the first mandrel patterns;
forming third mandrel patterns and first separation layer patterns having a line shape on the first region and forming a fourth mandrel pattern and a second separation layer pattern covering the buffer layer on the second region, by patterning the separation layer and the first mandrel layer by using the first spacer and the second mandrel pattern as an etching mask, wherein the third mandrel patterns, the first separation layer patterns, the fourth mandrel pattern, and the second separation layer pattern are disposed on the buffer layer;
forming a second spacer contacting side walls of the third mandrel pattern, the first separation layer patterns, the fourth mandrel pattern, and the second separation layer pattern on a top surface of the buffer layer;
removing the third mandrel patterns and the first separation layer patterns;
forming a buffer layer pattern and a preliminary mask pattern on the first region and the second region of the substrate by etching the buffer layer and a portion of the mask layer by using the second spacer and the fourth mandrel pattern as an etching mask and removing the second separation layer pattern;
removing the fourth mandrel pattern; and
forming a mask pattern by etching the preliminary mask pattern by using the buffer layer pattern as an etching mask,
wherein the buffer layer includes a material having an electrical conductivity lower than an electrical conductivity of the mask layer, and having etching selectivity with respect to the mask layer.
14 . The method of claim 13 ,
wherein the buffer layer includes a same material as the second spacer or a material having a same electrical conductivity as the second spacer.
15 . The method of claim 13 ,
wherein the second spacer includes silicon oxide, and
wherein the buffer layer includes an insulating material including a silicon-oxygen bond.
16 . The method of claim 13 ,
wherein the buffer layer includes silicon oxide or silicon oxynitride.
17 . The method of claim 13 ,
wherein the mask layer includes polysilicon.
18 . The method of claim 13 ,
wherein the forming of the buffer layer pattern and the preliminary mask pattern on the first region and the second region of the substrate by removing the second separation layer pattern, the removing of the fourth mandrel pattern, and the forming of the mask pattern by etching the preliminary mask pattern are performed in situ.
19 . A method for manufacturing a semiconductor device, the method comprising:
sequentially stacking a mask layer, a buffer layer, and a first mandrel layer on a first region and second a second region of a substrate;
forming first mandrel patterns having a line shape on the first region and forming a second mandrel pattern covering the buffer layer on the second region, by patterning the first mandrel layer, wherein the first mandrel patterns and the second mandrel pattern are disposed on the buffer layer;
forming a first spacer contacting walls of the first mandrel patterns and the second mandrel pattern on the buffer layer;
removing the first mandrel patterns;
forming a buffer layer pattern and a preliminary mask pattern on the first region and the second region of the substrate by etching the buffer layer and a portion of the mask layer by using the first spacer and the second mandrel pattern as an etching mask;
removing the second mandrel pattern; and
forming a mask pattern by etching the preliminary mask pattern by using the buffer layer pattern as an etching mask,
wherein the buffer layer includes a material having an electrical conductivity lower than an electrical conductivity of the mask layer, and having etching selectivity with respect to the mask layer.
20 . The method of claim 19 ,
wherein the buffer layer includes a same material as the first spacer or a material having a same electrical conductivity as the first spacer.