Surface topologies of electrostatic substrate support for particle reduction
A substrate support for use in a processing chamber to hold a substrate thereon includes a substrate support body, and a plurality of mesas on recessed surfaces of the substrate support body, wherein heights of the plurality of mesas from the recessed surfaces vary over the substrate support body between at least two different heights.
1 . A substrate support for use in a processing chamber, comprising:
a substrate support body configured to hold a substrate thereon; and
a plurality of mesas on recessed surfaces of the substrate support body, the plurality of mesas comprising ceramic material, wherein
the substrate support body comprises active materials that exhibit piezo-electricity or piezo-resistivity to change heights of the plurality of mesas from the recessed surfaces to conform to the substrate.
2 . The substrate support of claim 1 , wherein
the substrate support body comprises ceramic material selected from the group consisting of silicon carbide (SiC), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y 2 O 3 ), and combinations thereof.
3 . The substrate support of claim 1 , wherein
the plurality of mesas comprises material having higher hardness than the substrate support body.
4 . The substrate support of claim 1 , wherein
the heights of the plurality of mesas are between 1 μm and 5 mm, and
height differences different heights of the plurality of mesas are between 1 μm and 5 mm, and
the plurality of mesas have a width of between 20 μm and 20 mm and a spacing between adjacent mesas of between 20 μm and 20 mm.
5 . The substrate support of claim 1 , wherein a contact area of the plurality of mesas with a substrate to be disposed thereon is less than 20% of a backside surface area of the substrate.
6 . The substrate support of claim 1 , wherein the plurality of mesas is formed by a laser ablation process.
7 . A substrate support for use in a processing chamber to hold a substrate thereon, comprising:
a substrate support body; and
a plurality of mesas on recessed surfaces of the substrate support body, each of the plurality of mesas having elevated elongated features with holes formed therebetween from a top surface of the elevated elongated features.
8 . The substrate support of claim 7 , wherein
the substrate support body comprise ceramic material selected from the group consisting of silicon carbide (SiC), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y 2 O 3 ), and combinations thereof.
9 . The substrate support of claim 7 , wherein
the plurality of mesas comprises ceramic material having higher hardness than the substrate support body.
10 . The substrate support of claim 7 , wherein
the plurality of mesas has height of the plurality of mesas are between 1 μm and 5 mm, a width of between 20 μm and 20 mm and a spacing between adjacent mesas of between 20 μm and 20 mm.
11 . The substrate support of claim 10 , wherein
the holes are partial holes having a depth shorter than the height of the plurality of mesas from the recessed surfaces.
12 . The substrate support of claim 10 , wherein
the holes are through holes having a depth longer than the height of the plurality of mesas from the recessed surfaces.
13 . The substrate support of claim 12 , wherein
the holes are in fluid communication with a channel formed within the substrate support body.
14 . The substrate support of claim 7 , wherein
the mesas is a plurality of veins having a height of between 1 μm and 5 mm, and a width of between 20 μm and 5 mm.
15 . The substrate support of claim 14 , wherein
the holes are one or more grooves formed in one or more veins of the plurality of veins.
16 . The substrates support of claim 7 , wherein a contact area of the plurality of mesas with a substrate to be disposed thereon is less than 20% of a backside surface area of the substrate.
17 . The substrate support of claim 8 , wherein the plurality of mesas is formed by a laser ablation process.