Granted Patent B2

US 12,543,387 · App. 18/675,837 · Granted Feb 3, 2026

Inventors: Harold Hwang (Princeton, NJ); Matthew T. O'Grady (Newtown, PA); Brian Edward Piccione (Yardley, PA); Mark Itzler (Princeton, NJ)

Assignee: LG INNOTEK CO., LTD.

H10F39/18H04N25/75H10F30/225H10F39/803

Abstract

Claims (41)

1 . An apparatus comprising:

a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector;

a memory configured to store a negative bias voltage for the PDA and a nominal breakdown voltage for each pixel in the PDA; and

a read out integrated circuit (ROIC) communicatively coupled to the PDA and the memory, the ROIC being configured to:

read, from the memory, the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA,

determine a difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA, and

adjust an arm/disarm bias voltage for each pixel in the PDA based on the difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA.

2 . The apparatus of claim 1 , wherein each pixel in the PDA comprises one or more Geiger-mode avalanche photodiodes (GmAPDs).

3 . The apparatus of claim 2 , wherein the negative bias voltage is the same fixed value across the GmAPDs.

4 . The apparatus of claim 3 , wherein the ROIC is further configured to:

adjust the arm/disarm bias voltage of each pixel to compensate a variation in the nominal breakdown voltage for each pixel.

5 . The apparatus of claim 3 , wherein the ROIC is further configured to:

adjust the arm/disarm bias voltage of each pixel such that each pixel operates at the same over bias voltage level after adjustment of the arm/disarm bias voltage.

6 . The apparatus of claim 3 , wherein the ROIC is further configured to:

adjust the arm/disarm bias voltage for each pixel based on the respective nominal breakdown voltage such that each pixel operates in an armed state.

7 . The apparatus of claim 1 , further comprising:

a bias source configured to supply the arm/disarm bias voltage to each pixel of the PDA,

wherein the ROIC is further configured to:

adjust the arm/disarm bias voltage to a predetermined arming bias value to arm each pixel, and

adjust the arm/disarm bias voltage to a predetermined disarming bias value to disarm each pixel.

8 . The apparatus of claim 7 , wherein the ROIC is further configured to adjust the arm/disarm bias voltage to a value above the nominal breakdown voltage value stored in the memory for each pixel of the PDA to arm each pixel of the PDA.

9 . The apparatus of claim 8 , wherein the ROIC is further configured to adjust the arm/disarm bias voltage to a value below the nominal breakdown voltage value stored in the memory for each pixel of the PDA to disarm each pixel of the PDA.

10 . The apparatus of claim 1 , wherein the nominal breakdown voltage for a first pixel in the PDA is different from the nominal breakdown voltage for a second pixel in the PDA.

11 . The apparatus of claim 10 , wherein the first pixel and the second pixel are configured to operate at the same over bias voltage level after adjustment of the arm/disarm bias voltage.

12 . The apparatus of claim 1 , wherein the apparatus comprises a focal plan array (FPA).

13 . The apparatus of claim 1 , wherein the apparatus comprises a light detection and ranging sensor (lidar).

14 . The apparatus of claim 1 , wherein the ROIC is configured to adjust the arm/disarm bias voltage for each pixel in the PDA such that each pixel in the PDA operates at the same over bias voltage level.

15 . A method comprising:

reading, from a memory by a readout integrated circuit (ROIC), a negative bias voltage for a pixelated photodiode array (PDA) and a nominal breakdown voltage for each pixel in the PDA, each pixel in the PDA including a respective radiation detector, wherein the ROIC is communicatively coupled to the PDA and the memory;

determining, by the ROIC, a difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA; and

adjusting, by the ROIC, an arm/disarm bias voltage for each pixel in the PDA based on the difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA.

16 . The method of claim 15 , wherein the adjusting further comprises:

adjusting the arm/disarm bias voltage of each pixel to compensate a variation in the nominal breakdown voltage for each pixel.

17 . The method of claim 15 , wherein the adjusting further comprises:

adjusting the arm/disarm bias voltage of each pixel such that each pixel operates at the same over bias voltage level after adjustment of the arm/disarm bias voltage.

18 . The method of claim 15 , wherein the adjusting further comprises:

adjusting the arm/disarm bias voltage for each pixel based on the respective nominal breakdown voltage such that each pixel operates in an armed state.

19 . A read out integrated circuit (ROIC) communicatively coupled to a pixelated photodiode array (PDA) and a memory configured to store a negative bias voltage for the PDA and a nominal breakdown voltage for each pixel in the PDA, wherein each pixel in the PDA includes a radiation detector, the ROIC being configured to:

read from the memory the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA,

determine a difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA, and

adjust an arm/disarm bias voltage for each pixel in the PDA based on the difference between the negative bias voltage for the PDA and the nominal breakdown voltage for each pixel in the PDA.

Continuity (2)

References Cited (26)