In-situ solid chemical vapor deposition precursor delivery
A chemical vapor deposition system comprises a reactor including at least one wall extending between an inlet end and an outlet end, and an internal volume defined by the at least one wall, the inlet end, and the outlet end. The reactor further comprises a heat source in thermal communication with the internal volume, and a solid precursor container removably placed within the internal volume. The solid precursor container includes at least one internal cavity for holding an amount of the solid precursor, and an opening fluidly connecting the at least one internal cavity to the internal volume of the reactor. The solid precursor comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.
1 . A chemical vapor deposition system comprising:
a reactor comprising;
at least one wall extending between an inlet end and an outlet end; and
an internal volume defined by the at least one wall, the inlet end, and the outlet end;
a heat source in thermal communication with the internal volume; and
a solid precursor container removably placed within the internal volume, wherein the solid precursor container is a tooling for at least partially enclosing a substrate, the solid precursor container comprising:
a first plate comprising a first internal cavity configured to hold an amount of a solid precursor and a first opening fluidly connecting the first internal cavity to the internal volume of the reactor; and
a second plate, wherein the first plate and the second plate are configured to at least partially enclose the substrate therebetween,
wherein each of the first plate and the second plate further comprises a plurality of apertures extending fully through a thickness of the respective first plate and second plate, each aperture open to the internal volume at a first end and open to face the substrate at a second end opposite the first end.
2 . The system of claim 1 , wherein the solid precursor is formed as one of a powder, a pellet, and a tablet.
3 . The system of claim 1 , wherein the second plate comprises a second internal cavity configured to hold an amount of the solid precursor and a second opening fluidly connecting the second internal cavity to the internal volume of the reactor.
4 . The system of claim 3 , wherein the first internal cavity is disposed in a body of the first plate, and wherein the second internal cavity is disposed within a body of the second plate.
5 . The system of claim 3 , wherein the first opening is disposed to face the substrate and wherein the second opening is disposed to face the substrate.
6 . The system of claim 3 , further comprising:
the solid precursor disposed in the first internal cavity and the second internal cavity, wherein the solid precursor comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.
7 . A method of depositing a coating on a substrate using the chemical vapor deposition system of claim 1 , the method comprising:
placing the substrate and the solid precursor container in the internal volume of the reactor,
wherein the first plate and the second plate of the solid precursor container partially enclose the substrate therebetween;
heating the internal volume of the reactor to at least a sublimation temperature of the solid precursor such that the solid precursor vaporizes into a vaporous precursor, the vaporous precursor exiting the internal cavity and depositing on the substrate; and
flowing a reactant gas into the internal volume of the reactor such that an amount of the reactant gas reacts with the deposited vaporous precursor to form the coating.
8 . The method of claim 7 , wherein the substrate is a fibrous ceramic preform.
9 . The method of claim 7 , wherein the solid precursor comprises at least one of aluminum, zirconium, hafnium, and a rare earth metal.
10 . The method of claim 9 , wherein the reactant gas comprises at least one of ammonia, hydrogen, and nitrogen.
11 . The method of claim 7 , wherein the sublimation temperature ranges from 100° C. to 400° C.
12 . The method of claim 7 , wherein the second plate comprises a second internal cavity configured to hold an amount of the solid precursor and a second opening fluidly connecting the second internal cavity to the internal volume of the reactor.