IP Library › Granted Patent US 12,548,513
Granted Patent B2
US 12,548,513 · App. 18/821,615 · Granted Feb 10, 2026

Pixel and organic light emitting display device having the same

Inventors: Dongwoo Kim (Suwon-si, KR); Sunghwan Kim (Yongin-si, KR); Kyoungju Shin (Hwaseong-si, KR); Cheol-Gon Lee (Suwon-si, KR); Sang-Uk Lim (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
G09G3/3233G01N11/02G01N27/4161G01N27/4166G01N33/18G09G3/3266G09G3/3283H10D86/421H10D86/60H10K59/1216H10K59/131G09G2300/0426G09G2300/0819G09G2300/0823G09G2300/0852G09G2300/0861G09G2320/0214G09G2320/0219G09G2320/0238H10D30/6731H10D30/6745H10D30/6755H10D86/423H10D86/441H10D86/481H10K59/1213
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,548,513
App. No.
18/821,615
Granted
Feb 10, 2026
Kind
B2
Abstract

An organic light emitting display device includes a plurality of pixels. Each of the pixels includes an organic light emitting diode, first to third transistors, a storage capacitor, and a first capacitor. The second transistor includes a gate electrode receiving a first scan signal, a first electrode receiving a data signal, and a second electrode connected to a first electrode of the first transistor. The third transistor includes a gate electrode receiving a second scan signal, a first electrode connected to a second electrode of the first transistor, and a second electrode connected to a gate electrode of the first transistor. The storage capacitor includes a first electrode receiving a power voltage and a second electrode connected to the gate electrode of the first transistor. The first capacitor includes a first electrode connected to the gate electrode of the third transistor and a second electrode receiving the power voltage.

Claims (29)

1 . A pixel comprising:

an organic light emitting diode;

a first active pattern;

a second active pattern spaced apart from the first active pattern;

a first-first gate pattern that overlaps a first portion of the first active pattern and forms a first transistor;

a first-second gate pattern that transfers a first scan signal and overlaps a second portion of the first active pattern and forms a second transistor;

a second-first gate pattern that transfers a first power voltage and overlaps the first-first gate pattern and forms a storage capacitor; and

a third-first gate pattern that transfers a second scan signal and overlaps a first portion of the second active pattern and forms a third transistor (T 3 ),

wherein the first-second gate pattern extends in a first direction and crosses the first active pattern and the second active pattern in a plan view, and

wherein the third-first gate pattern extends in the first direction and crosses the first active pattern and the second active pattern in a plan view.

2 . The pixel of claim 1 , wherein the first active pattern is made of a first semiconductor material, and

wherein the second active pattern is made of a second semiconductor material that differs from the first semiconductor material.

3 . The pixel of claim 2 , wherein the first semiconductor material comprises polysilicon.

4 . The pixel of claim 2 , wherein the second semiconductor material comprises an oxide semiconductor.

5 . The pixel of claim 1 , wherein the second active pattern is electrically connected to the first-first gate pattern through a first connector.

6 . The pixel of claim 5 , wherein the second active pattern is electrically connected to the first active pattern through a second connector.

7 . The pixel of claim 6 , wherein the first connector and the second connector are made of a same material.

8 . The pixel of claim 6 , wherein the second active pattern is further electrically connected to the first active pattern through a third connector.

9 . The pixel of claim 6 , wherein the second active pattern is electrically connected to the second-second gate pattern through a third connector.

10 . The pixel of claim 1 , further comprising:

a first-third gate pattern that transfers an emission control signal, overlaps a third portion of the first active pattern and forms a fifth transistor, and overlaps a fourth portion of the first active pattern and forms a sixth transistor.

11 . The pixel of claim 1 , further comprising:

a second-second gate pattern that extends in the first direction and transfers an initialization voltage.

12 . The pixel of claim 1 , further comprising:

a third-second gate pattern that transfers a third scan signal and overlaps a second portion of the second active pattern and forms a fourth transistor (T 4 ).

13 . The pixel of claim 1 , further comprising:

a third-third gate pattern that transfers a fourth scan signal and overlaps a third portion of the second active pattern and forms a seventh transistor.

14 . The pixel of claim 1 , wherein the first portion of the first active pattern has a curved shape.

15 . The pixel of claim 1 , wherein the first and second active patterns are spaced apart from an active pattern of a neighboring pixel that is adjacent to the pixel in a second direction that crosses the first direction.

Priority Claims (1)
KR 10-2017-0040936 · Mar 30, 2017 · national
Continuity (6)
Continuation 18335107 · Jun 14, 2023
Continuation 18045761 · Oct 11, 2022
Continuation 17341683 · Jun 8, 2021
Continuation 16869789 · May 8, 2020
Division 15704578 · Sep 14, 2017
Related Publication 20240420638A1 · Dec 19, 2024
References Cited (19)
US 7737923B2 · Shishido · 2010 [cited by applicant]
US 10650739B2 · Kim et al. · 2020 [cited by applicant]
US 11030953B2 · Kim et al. · 2021 [cited by applicant]
US 11468838B2 · Kim et al. · 2022 [cited by applicant]
US 11749198B2 · Kim et al. · 2023 [cited by applicant]
US 20120062536A1 · Park · 2012 [cited by applicant]
US 20140198136A1 · Lee · 2014 [cited by applicant]
US 20150035448A1 · Wang · 2015 [cited by applicant]
US 20150053935A1 · Gupta et al. · 2015 [cited by applicant]
US 20150102303A1 · Kim · 2015 [cited by applicant]
US 20160379570A1 · Lee et al. · 2016 [cited by applicant]
US 20160379571A1 · Kim et al. · 2016 [cited by applicant]
US 20180286307A1 · Kim et al. · 2018 [cited by applicant]
US 20200265782A1 · Kim et al. · 2020 [cited by applicant]
US 20210293771A1 · Kim et al. · 2021 [cited by applicant]
US 20230053847A1 · Kim et al. · 2023 [cited by applicant]
US 20230326408A1 · Kim et al. · 2023 [cited by applicant]
KR 1020070032218A · 2007 [cited by applicant]
KR 1020120138924 · 2012 [cited by applicant]