IP Library › Granted Patent US 12,548,707
Granted Patent B2
US 12,548,707 · App. 17/574,564 · Granted Feb 10, 2026

Inductor device

Inventor: Hsiao-Tsung Yen (Hsinchu, TW)
Assignee: Realtek Semiconductor Corporation
H01F27/2823H01F27/29H01F27/40
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,548,707
App. No.
17/574,564
Granted
Feb 10, 2026
Kind
B2
Abstract

An inductor device includes a first trace, a second trace, and a second switch. The first trace includes a first sub-trace, a first switch and a second sub-trace. The first sub-trace includes a first line and a second line. The first switch is configured to switch the first sub-trace to the first line or switch the first sub-trace to the second line. The second sub-trace is coupled to one terminal of the first sub-trace at a first node. The second trace includes a third sub-trace and a fourth sub-trace. The fourth sub-trace is coupled to one terminal of the third sub-trace at a second node. The second switch is coupled to the first node and the second node.

Claims (46)

1 . An inductor device, comprising:

a first trace, comprising:

a first sub-trace;

a first switch, configured to connect the first sub-trace to one of a first line and a second line, wherein lengths of the first line and the second line are different, wherein the first sub-trace is connected to the first line when the first switch is turned off, wherein the first sub-trace is connected to the second line when the first switch is turned on; and

a second sub-trace, coupled with a terminal of the first sub-trace at a first node;

a second trace, comprising:

a third sub-trace; and

a fourth sub-trace, coupled with a terminal of the third sub-trace at a second node; and

a second switch, coupled between the first node and the second node.

2 . The inductor device of claim 1 , wherein the first line comprises a plurality of first wires, and the second line comprises a second wire, wherein the first switch is configured to connect the first sub-trace to the first wires or the second wire, wherein the first sub-trace is connected to the first wires when the first switch is turned off, wherein the first sub-trace is connected to the second wire when the first switch is turned on.

3 . The inductor device of claim 2 , wherein the first wires are located on a first layer, and the second wire is located on a second layer.

4 . The inductor device of claim 3 , wherein the second sub-trace, wherein the second trace comprises:

a third switch, configured to connect the second sub-trace to one of the third line and the fourth line, wherein lengths of the third line and the fourth line are different, wherein the second sub-trace us connected to the third line when the third switch is turned off, wherein the second sub-trace is connected to the fourth line when the third switch is turned on.

5 . The inductor device of claim 4 , wherein the third line comprises a plurality of third wires, and the fourth line comprises a fourth wire, wherein the third switch is configured to connect the second sub-trace to the third wires or the fourth wire, wherein the second sub-trace is connected to the third wires when the third switch is turned off, wherein the second sub-trace is connected to the fourth wire when the third switch is turned on.

6 . The inductor device of claim 5 , wherein the third wires are located on the first layer, and the fourth wire is located on the second layer.

7 . The inductor device of claim 6 , wherein the fourth wire and the third wires are overlapped to each other partially.

8 . The inductor device of claim 7 , wherein the fourth wire and the first wires are overlapped to each other partially.

9 . The inductor device of claim 8 , wherein the second wire is not overlapped to the first wires and the third wires.

10 . The inductor device of claim 9 , wherein the first wires and the third wires are disposed to each other in an interlaced manner.

11 . The inductor device of claim 1 , wherein the first sub-trace comprises:

a first terminal; and

a second terminal;

wherein the second sub-trace comprises:

a first terminal; and

a second terminal, coupled with the second terminal of the first sub-trace at the first node.

12 . The inductor device of claim 11 , wherein the third sub-trace comprises:

a first terminal; and

a second terminal;

wherein the fourth sub-trace comprises:

a first terminal; and

a second terminal, coupled with the second terminal of the third sub-trace at the second node.

13 . The inductor device of claim 12 , wherein the first sub-trace and the second sub-trace are disposed at a first side of the inductor device, and the third sub-trace and the fourth sub-trace are disposed at a second side of the inductor device.

14 . The inductor device of claim 13 , wherein the first side and the second side are located at opposite sides of the inductor device.

15 . The inductor device of claim 14 , further comprising:

a first connection member, comprising:

a first terminal, coupled to the first line and the second line; and

a second terminal, coupled to the first sub-trace.

16 . The inductor device of claim 15 , wherein the first connection member is located on a second layer.

17 . The inductor device of claim 16 , wherein the second sub-trace comprises a third line and a fourth line, wherein the inductor device further comprises:

a second connection member, comprising:

a first terminal, coupled with the third line and the fourth line at a same point; and

a second terminal, coupled to the second sub-trace.

18 . The inductor device of claim 17 , wherein the second connection member is located on the second layer.

19 . The inductor device of claim 18 , further comprising:

a capacitor, coupled between the first node and the second node.

20 . The inductor device of claim 19 , wherein the capacitor and the second switch are coupled to each other in parallel.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2022
From: YEN, HSIAO-TSUNG
To: REALTEK SEMICONDUCTOR CORPORATION
Reel/Frame 058638/0113 →
Priority Claims (1)
TW 109126927 · Aug 7, 2020 · national
Continuity (3)
Continuation In Part 17014063 · Sep 8, 2020
Provisional Application 62898618 · Sep 11, 2019
Related Publication 20220139608A1 · May 5, 2022
References Cited (34)
US 10930588B2 · Raidl · 2021 [cited by applicant]
US 11095324B2 · Chen et al. · 2021 [cited by applicant]
US 11837877B2 · Pei et al. · 2023 [cited by applicant]
US 20070268007A1 · El Rai · 2007 [cited by applicant]
US 20080284553A1 · Lim et al. · 2008 [cited by applicant]
US 20090096413A1 · Partovi et al. · 2009 [cited by applicant]
US 20120223796A1 · Huang et al. · 2012 [cited by applicant]
US 20120242406A1 · Ke · 2012 [cited by applicant]
US 20130265132A1 · Huang et al. · 2013 [cited by applicant]
US 20130267185A1 · Chen et al. · 2013 [cited by applicant]
US 20160268039A1 · Park et al. · 2016 [cited by applicant]
US 20160285280A1 · Kallal · 2016 [cited by examiner]
US 20160336914A1 · Wang · 2016 [cited by examiner]
US 20180254139A1 · Yazaki · 2018 [cited by applicant]
US 20180254313A1 · Huang et al. · 2018 [cited by applicant]
US 20180294089A1 · Leong et al. · 2018 [cited by applicant]
US 20200177151A1 · Pierce et al. · 2020 [cited by applicant]
US 20210074465A1 · Yen et al. · 2021 [cited by applicant]
US 20210074466A1 · Yen et al. · 2021 [cited by applicant]
CN 102483984A · 2012 [cited by applicant]
CN 104717833A · 2015 [cited by applicant]
CN 108565102A · 2018 [cited by applicant]
CN 110335737A · 2019 [cited by applicant]
CN 112335042A · 2021 [cited by applicant]
CN 112489921A · 2021 [cited by applicant]
CN 112489922A · 2021 [cited by applicant]
CN 112687456A · 2021 [cited by applicant]
TW 200535878A · 2005 [cited by applicant]
TW 201342402A · 2013 [cited by applicant]
TW I715516B · 2021 [cited by applicant]
The office action of the related Chinese application No. 202010748865.1 issued on Nov. 23, 2023. [cited by applicant]
The office action of the related Chinese application No. 202010825074.4 issued on Dec. 30, 2021 and its English summary. [cited by applicant]
The office action of the related Chinese application No. 202111412783.0 dated Jul. 15, 2025. [cited by applicant]
The office action of corresponding CN application No. 202111192924.2 issued on Jul. 11, 2025 and its English summary. [cited by applicant]