IP Library Granted Patent US 12,548,746
Granted Patent B2
US 12,548,746 · App. 17/849,914 · Granted Feb 10, 2026

Physical vapor deposition apparatus

Inventors: Jaesuk Kim (Hwaseong-si, KR); Sangwook Park (Seongnam-si, KR); Gukrok Yun (Seoul, KR); Kyuhee Han (Seongnam-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01J37/3458C23C14/351C23C14/354H01J37/32651H01J37/3402H01J37/3408H01J37/3441H01J37/3447H01J37/345
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Quick Facts
Patent No.
US 12,548,746
App. No.
17/849,914
Granted
Feb 10, 2026
Kind
B2
Abstract

A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber to protect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.

Claims (13)

1 . A physical vapor deposition (PVD) apparatus comprising:

a vacuum chamber;

a pedestal arranged in the vacuum chamber and configured to support a substrate;

a target arranged on the vacuum chamber and including a deposition material;

a shield arranged on an inner sidewall of the vacuum chamber to protect the vacuum chamber from the deposition material;

a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber;

a magnet configured to induce the plasma to the target;

a magnetic field formation line having a first connection point connected with the target power supply, wherein a first target line is directly connected to the target power supply and magnetic field formation line, wherein the magnetic field formation line has an annular shape configured to surround the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber;

a ground line connected to a second connection point of the magnetic field formation line and a lower structure of the vacuum chamber, wherein the second connection point is symmetrical with the first connection point with respect to the center of the shield; and

a shield power supply configured to apply a shield voltage to the shield, wherein a first shield line is directly connected to the shield power supply and the magnetic field formation line at the second connection point,

wherein the magnetic field formation line is disposed outside of the vacuum chamber.

2 . The PVD apparatus of claim 1 , wherein the magnetic field formation line has a radius of about √{square root over (2)}±v/√{square root over (2)}×20% times a radius of the shield.

3 . The PVD apparatus of claim 1 , further comprising a collimator arranged between the target and the pedestal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2022
From: KIM, JAESUK; PARK, SANGWOOK; YUN, GUKROK; HAN, KYUHEE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 060317/0908 →
Priority Claims (1)
KR 10-2021-0174751 · Dec 8, 2021 · national
Continuity (1)
Related Publication 20230175113A1 · Jun 8, 2023
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