Semiconductor structure and manufacturing method thereof
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals, where the active region includes a source, a drain, and a channel region; a word line, where the word line is connected to the channel region and extends along a first direction; a bit line, where the bit line is connected to the drain or the source and extends along a second direction, the first direction being different from the second direction; and a magnetic memory cell, connected to the source or the drain.
1 . A semiconductor structure, comprising:
a substrate, comprising active regions arranged at intervals, wherein each active region comprises a source, a drain, and a channel region;
a plurality of word lines, wherein each word line is located adjacent to corresponding channel regions and extends along a first direction;
a bit line, wherein the bit line is connected to the drain or the source and extends along a second direction, the first direction intersecting with the second direction; and
a magnetic memory cell, wherein the magnetic memory cell is connected to the source or the drain, wherein the magnetic memory cell comprises a first magnetic domain wall connected to a first word line in the plurality of word lines, and a second magnetic domain wall connected to a second word line in the plurality of word lines, wherein the first word line is different from the second word line.
2 . The semiconductor structure according to claim 1 , wherein the word line is arranged in the active region, and two adjacent word lines of the plurality of word lines are located in a corresponding active region of the active regions and divide the corresponding active region into the source or the drain; and
the bit line is arranged on a surface of the substrate and is connected to the drain or the source between the two adjacent word lines.
3 . The semiconductor structure according to claim 1 , wherein each active region is a columnar structure, and columnar structures are arranged along the first direction and the second direction;
each word line covers sidewalls of the corresponding channel regions arranged along the first direction; and
the bit line is located at a bottom of the columnar structure and is connected to a plurality of corresponding columnar structures arranged along the second direction.
4 . The semiconductor structure according to claim 1 , wherein the first word line and the second word line are connected to different active regions respectively.
5 . The semiconductor structure according to claim 4 , wherein the first magnetic domain wall is connected to the source or drain connected with the first word line, and the second magnetic domain wall is connected to the source or drain connected with the second word line.
6 . The semiconductor structure according to claim 1 , wherein the magnetic memory cell further comprises:
a magnetic track, wherein the magnetic track is located at a top of the first magnetic domain wall and a top of the second magnetic domain wall and connects the first magnetic domain wall and the second magnetic domain wall;
a magnetic tunnel junction, wherein the magnetic tunnel junction is located above the magnetic track, the magnetic tunnel junction and the magnetic track are connected through magnetic induction, and along a direction away from the magnetic track, the magnetic tunnel junction comprises a magnetic free layer, a non-magnetic spacing layer, and a magnetic reference layer that are sequentially arranged; and
a selector, wherein the selector is located on the magnetic tunnel junction and is in contact connection with the magnetic reference layer.
7 . The semiconductor structure according to claim 6 , wherein the magnetic free layer has a vertical magnetic field with a variable direction, and the magnetic reference layer has a vertical magnetic field with a fixed direction.
8 . The semiconductor structure according to claim 7 , wherein the first magnetic domain wall and the second magnetic domain wall each have a magnetized segment, and a magnetization direction of the magnetized segment of the first magnetic domain wall is different from a magnetization direction of the magnetized segment of the second magnetic domain wall.
9 . The semiconductor structure according to claim 6 , further comprising:
a first write wire, wherein the first write wire extends along the first direction and is located above the magnetic tunnel junction, and a plurality of magnetic tunnel junctions are connected to the above first write wire through the selector; and
a second write wire, wherein the second write wire extends along the second direction and is located at a bottom of the magnetic tunnel junction, and a plurality of the magnetic tunnel junctions are connected to the bottom second write wire.
10 . The semiconductor structure according to claim 9 , wherein the first write wire and the second write wire cross each other, and the magnetic tunnel junction is arranged at a cross position between the first write wire and the second write wire.
11 . The semiconductor structure according to claim 10 , further comprising an insulating layer located between the magnetic track and the second write wire.