Nitride semiconductor device and method for manufacturing same
A nitride semiconductor device 1 includes a first nitride semiconductor layer 4 that constitutes an electron transit layer, a second nitride semiconductor layer 5 that is formed on the first nitride semiconductor layer and constitutes an electron supply layer, and a gate portion 20 that is formed on the second nitride semiconductor layer. The gate portion 20 includes a semiconductor gate layer 21 of a ridge shape that is formed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity and a gate electrode 22 that is formed on the semiconductor gate layer. The semiconductor gate layer is constituted of a gate layer main body portion 211 that is formed on the second nitride semiconductor layer and an upper protruding portion 212 that is formed on a width intermediate portion of an upper surface of the gate layer main body portion, and the gate electrode is formed on a top surface of the upper protruding portion.
1 . A nitride semiconductor device comprising:
a first nitride semiconductor layer that constitutes an electron transit layer;
a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer; and
a gate portion that is formed on the second nitride semiconductor layer, wherein
the gate portion includes
a semiconductor gate layer of a ridge shape that is formed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity, and
a gate electrode that is formed on the semiconductor gate layer,
the semiconductor gate layer is constituted of:
a gate layer main body portion that is formed on the second nitride semiconductor layer, and
an upper protruding portion that is formed on an upper surface of the gate layer main body portion,
the gate electrode is formed on a top surface of the upper protruding portion, and
the nitride semiconductor device further comprises:
a first dielectric film that covers a side surface of the upper protruding portion and the upper surface of the gate layer main body portion connected to a lower edge of the side surface; and
a second dielectric film that covers a side surface of the gate layer main body portion, an upper surface of the second nitride semiconductor layer, and a whole side surface of the first dielectric film.
2 . The nitride semiconductor device according to claim 1 , wherein
a source contact hole and a drain contact hole that penetrate through the second dielectric film in a thickness direction are formed in the second dielectric film, and
the nitride semiconductor device further comprises a source electrode and a drain electrode that penetrate through the source contact hole and the drain contact hole respectively and are in ohmic contact with the second nitride semiconductor layer.
3 . The nitride semiconductor device according to claim 1 , wherein a thickness of the upper protruding portion is thinner than a thickness of the gate layer main body portion.
4 . The nitride semiconductor device according to claim 1 , wherein a thickness of the upper protruding portion is thicker than a thickness of the gate layer main body portion.
5 . The nitride semiconductor device according to claim 1 , wherein
both side surfaces of the gate layer main body portion are inclined toward the gate electrode, and
both side surfaces of the upper protruding portion are inclined toward the gate electrode side.
6 . The nitride semiconductor device according to claim 5 , wherein an average inclination angle of the side surfaces of the gate layer main body portion differs from an average inclination angle of the side surfaces of the upper protruding portion.
7 . The nitride semiconductor device according to claim 1 , wherein upper surfaces of both side portions of the gate layer main body portion, that respectively connect lower edges of both side surfaces of the upper protruding portion and upper edges of the corresponding side surfaces of the gate layer main body portion, are inclined toward a center of the upper protruding portion.
8 . The nitride semiconductor device according to claim 1 , wherein the gate electrode is formed so as to cover the entire top surface of the upper protruding portion.
9 . The nitride semiconductor device according to claim 1 , wherein, in plan view, both side edges of a lower surface of the gate electrode are receded further inward than corresponding side edges of the top surface of the upper protruding portion.
10 . The nitride semiconductor device according to claim 1 , wherein
the first nitride semiconductor layer is constituted of a GaN layer,
the second nitride semiconductor layer is constituted of an Al x Ga 1-x N (0<x≤1) layer, and
the semiconductor gate layer is constituted of a p type GaN layer.
11 . The nitride semiconductor device according to claim 1 , wherein, if the semiconductor gate layer is deemed to be a first semiconductor gate layer, a second semiconductor gate layer that is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer is interposed between the first semiconductor gate layer and the gate electrode.
12 . The nitride semiconductor device according to claim 10 , wherein, if the semiconductor gate layer is deemed to be a first semiconductor gate layer,
a second semiconductor gate layer that is constituted of a nitride semiconductor is interposed between the first semiconductor gate layer and the gate electrode, and
the second semiconductor gate layer is constituted of an Al y Ga 1-y N(0≤y<1, y≤x) layer.
13 . The nitride semiconductor device according to claim 1 , wherein the gate electrode is constituted of a single film that is any one of a Ti film, a TiN film, and a TiW film or of a composite film constituted of any combination of two or more of the films.
14 . The nitride semiconductor device according to claim 1 , further comprising a third dielectric film that is formed on an upper surface of the gate electrode.
15 . The nitride semiconductor device according to claim 1 , further comprising a third dielectric layer film that is formed on an upper surface of the gate electrode,
wherein a thickness of the third dielectric film is thicker than a thickness of the second dielectric film.
16 . The nitride semiconductor device according to claim 1 , wherein the first dielectric film and the second dielectric film are each constituted of a single film that is any one of an SiN film, an SiO 2 film, an SiON film, an Al 2 O 3 film, an AlN film, and an AlON film or of a composite film constituted of any combination of two or more of the films.
17 . The nitride semiconductor device according to claim 16 , wherein the first dielectric film and the second dielectric film are constituted of the same material.
18 . The nitride semiconductor device according to claim 16 , wherein the first dielectric film and the second dielectric layer film are constituted of different materials.
19 . The nitride semiconductor device according to claim 1 , further comprising a third dielectric film that is formed on an upper surface of the gate electrode,
wherein the second dielectric film covers an upper surface of the third dielectric film.