Image sensor
An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.
1 . An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface; and
a pixel isolation structure disposed in the semiconductor substrate,
wherein the pixel isolation structure vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions;
wherein the pixel isolation structure comprises:
a liner pattern, wherein the liner pattern defines a gap region, and comprises a plurality of sidewall portions and a bottom portion connecting the sidewall portions;
a liner insulating pattern disposed between the liner pattern and the semiconductor substrate; and
a capping insulating pattern disposed in the gap region of the liner pattern.
2 . The image sensor of claim 1 , wherein the pixel isolation structure comprises an air gap defined in the gap region by the capping insulating pattern.
3 . The image sensor of claim 1 , wherein the pixel isolation structure comprises a plurality of first portions extending in a first direction and a plurality of second portions intersecting the first portions and extending in a second direction, and
wherein the liner pattern continuously extends in the first direction and the second direction.
4 . The image sensor of claim 1 , wherein a thickness of the bottom portion of the liner pattern is substantially equal to or greater than a thickness of each of the sidewall portions.
5 . The image sensor of claim 1 , wherein each of upper portions of the sidewall portions of the liner pattern has a thickness which becomes progressively less toward the first surface.
6 . The image sensor of claim 1 , further comprising:
a device isolation layer adjacent to the first surface of the semiconductor substrate in each of the pixel regions,
wherein top surfaces of the sidewall portions of the liner pattern are located at a level between a bottom surface of the device isolation layer and the first surface of the semiconductor substrate.
7 . The image sensor of claim 1 , wherein the liner pattern and the semiconductor substrate comprise dopants having a first conductivity type.
8 . The image sensor of claim 1 , further comprising:
a plurality of photoelectric conversion regions respectively disposed in the pixel regions and comprising dopants having a second conductivity type,
wherein the sidewall portions of the liner pattern surround each of the photoelectric conversion regions when viewed in a plan view.
9 . The image sensor of claim 1 , further comprising:
a backside contact plug penetrating a portion of the semiconductor substrate and connected to the liner pattern.
10 . The image sensor of claim 9 , wherein the pixel isolation structure has a maximum width at the first surface of the semiconductor substrate, and
wherein the backside contact plug has a width greater than the maximum width of the pixel isolation structure.
11 . An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface;
a pixel isolation structure,
wherein the pixel isolation structure vertically extends from the first surface toward the second surface and surrounds each of a plurality of pixel regions, and comprises a liner pattern comprising a plurality of sidewall portions and a bottom portion connecting the sidewall portions; and
a backside contact plug,
wherein the backside contact plug penetrates a portion of the semiconductor substrate and is connected to the liner pattern of the pixel isolation structure.
12 . The image sensor of claim 11 , wherein the backside contact plug is in contact with the sidewall portions of the liner pattern.
13 . The image sensor of claim 11 , wherein a width of the backside contact plug is greater than a width of the pixel isolation structure in a first direction.
14 . The image sensor of claim 11 , wherein the backside contact plug has a width greater than a maximum width of the pixel isolation structure.
15 . The image sensor of claim 11 , wherein the pixel isolation structure further comprises a liner insulating pattern disposed between the liner pattern and the semiconductor substrate and a capping insulating pattern filling a gap region defined by the bottom portion and the sidewall portions of the liner pattern.
16 . The image sensor of claim 11 , further comprising:
a device isolation layer adjacent to the first surface of the semiconductor substrate in each of the pixel regions,
wherein top surfaces of the sidewall portions of the liner pattern are vertically spaced apart from a bottom surface of the device isolation layer.
17 . The image sensor of claim 11 , wherein the pixel isolation structure comprises a plurality of first portions extending in a first direction and a plurality of second portions intersecting the first portions and extending in a second direction, and
wherein the liner pattern continuously extends in the first direction and the second direction.
18 . An image sensor, comprising:
a semiconductor substrate having a first conductivity type, and having a first surface and a second surface opposite to the first surface;
a pixel isolation structure vertically extending from the first surface toward the second surface and surrounding each of a plurality of pixel regions,
wherein the pixel isolation structure comprises:
a liner pattern comprising a plurality of sidewall portions and a bottom portion connecting the sidewall portions;
a liner insulating pattern disposed between the semiconductor substrate and the liner pattern; and
a capping insulating pattern disposed on the liner pattern;
a photoelectric conversion region disposed in the semiconductor substrate of each of the pixel regions and comprising dopants having a second conductivity type;
a device isolation layer defining an active portion at the first surface of the semiconductor substrate in each of the pixel regions,
wherein the device isolation layer is adjacent to the first surface of the semiconductor substrate;
a transfer gate electrode disposed on the active portion of each of the pixel regions;
a backside contact plug penetrating a portion of the semiconductor substrate and connected to the liner pattern of the pixel isolation structure;
a plurality of color filters corresponding to the pixel regions disposed on the second surface of the semiconductor substrate;
a grid structure disposed between the color filters and overlapping the pixel isolation structure; and
a plurality of micro lenses disposed on the color filters.
19 . The image sensor of claim 18 , wherein the liner pattern comprises dopants having the first conductivity type.
20 . The image sensor of claim 18 , wherein the sidewall portions of the liner pattern surround each of the photoelectric conversion regions of the pixel regions.