Image sensor and method of manufacturing the same
An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.
1. An image sensor comprising:
a substrate having a first surface and a second surface which is opposite to the first surface; and
a pixel isolation portion provided in the substrate, the pixel isolation portion being configured to isolate unit pixels from each other,
wherein the pixel isolation portion comprises:
a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall;
a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion; and
an insulating liner provided between the first portion of the conductive structure and the substrate and provided between the second portion of the conductive structure and the substrate;
wherein the image sensor further comprises a fixed charge layer covering the second surface, and
wherein a portion of the fixed charge layer protrudes towards the air gap region.
2. The image sensor of claim 1 , wherein each of the insulating liner and the first filling insulation pattern includes silicon oxide, and
wherein a density of the silicon oxide included in the insulating liner is greater than a density of the silicon oxide included in the first filling insulation pattern.
3. The image sensor of claim 1 ,
wherein the portion of the fixed charge layer that extends into the air gap region closes an entrance of the air gap region.
4. The image sensor of claim 1 , wherein an inner sidewall of at least one of the first portion or the second portion is exposed by the air gap region.
5. The image sensor of claim 1 , wherein the substrate further includes an edge region spaced apart from the unit pixels, and
wherein the pixel isolation portion extends into the edge region,
the image sensor further comprising:
a connection contact penetrating the fixed charge layer to be in contact with the conductive structure, in the edge region.
6. The image sensor of claim 5 , wherein in the edge region, a portion of the connection contact extends into the air gap region to fill the air gap region.
7. The image sensor of claim 1 , wherein the pixel isolation portion further comprises: a second filling insulation pattern, which is adjacent to the first surface and overlaps the first filling insulation pattern, and
wherein the connection portion is provided between the first filling insulation pattern and the second filling insulation pattern.
8. The image sensor of claim 1 , wherein at least one trench is formed in the second surface, corresponding to at least one unit pixel of the unit pixels.
9. The image sensor of claim 1 ,
wherein the connection portion is provided between the first filling insulation pattern and the fixed charge layer.
10. The image sensor of claim 9 , wherein the fixed charge layer includes a protrusion protruding toward the insulating liner.
11. An image sensor comprising:
a substrate including unit pixels and including a first surface and a second surface which is opposite to the first surface;
a pixel isolation portion provided in the substrate to isolate the unit pixels from each other;
photoelectric conversion portions provided in the substrate, corresponding to the unit pixels, respectively;
a transfer gate provided on the first surface, corresponding to each unit pixel of the unit pixels;
a fixed charge layer contacting the second surface;
a color filter array provided on the fixed charge layer; and
a micro lens array layer on the color filter array,
wherein the pixel isolation portion comprises:
a first filling insulation pattern extending from the first surface toward the second surface and including an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall; and
a conductive structure comprising: a first portion on the first sidewall; and a second portion on the second sidewall,
wherein a portion of the fixed charge layer protrudes toward the air gap region.
12. The image sensor of claim 11 , wherein the portion of the fixed charge layer is configured to fill the air gap region.
13. The image sensor of claim 11 , wherein the conductive structure further comprises: a connection conductive pattern connecting the first portion and the second portion, and
wherein the connection conductive pattern includes a different material from a material included in at least one of the first portion or the second portion.
14. The image sensor of claim 11 , wherein the substrate further includes an edge region spaced apart from the unit pixels,
wherein the pixel isolation portion extends into the edge region,
the image sensor further comprising:
a connection contact penetrating the fixed charge layer and contacting the conductive structure, in the edge region.
15. The image sensor of claim 14 , wherein in the edge region, a portion of the connection contact extends into the air gap region to fill the air gap region.
16. An image sensor comprising:
a substrate including a first surface and a second surface which is opposite to the first surface; and
a pixel isolation portion provided in the substrate and configured to isolate a first unit pixel from a second unit pixel,
wherein the pixel isolation portion comprises:
a first filling insulation pattern extending from the first surface toward the second surface and including an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall;
a conductive structure including a first portion on the first sidewall; a second portion on the second sidewall; and a connection portion connecting the first portion and the second portion; and
an insulating liner provided between the first portion and the substrate and provided between the second portion and the substrate,
wherein the image sensor further comprises a fixed charge layer covering the second surface,
wherein a portion of the fixed charge layer protrudes toward the air gap region, and
wherein a density of an insulating material included in the insulating liner is greater than a density of an insulating material included in the first filling insulation pattern.
17. The image sensor of claim 16 , wherein the first portion surrounds the first unit pixel,
wherein the second portion surrounds the second unit pixel, and
wherein the connection portion has a mesh shape when viewed in a plan view.
18. The image sensor of claim 16 ,
wherein the fixed charge layer includes a protrusion protruding toward the air gap region.
19. The image sensor of claim 16 , wherein an inner sidewall of at least one of the first portion or the second portion is exposed by the air gap region.