Granted Patent B2

US 12,551,982 · App. 18/100,937 · Granted Feb 17, 2026

Inventors: Donghoon Kwon (Suwon-si, KR); Boun Yoon (Suwon-si, KR); Kihoon Jang (Suwon-si, KR)

Assignee: SAMSUNG ELECTRONICS CO., LTD.

B24B37/015B24B37/042H01L21/3212

Abstract

Claims (63)

1 . A substrate processing apparatus comprising:

a polishing platen comprising a fluid channel;

a polishing pad provided on a first surface of the polishing platen, the polishing pad comprising:

a pad body including a trench, the trench penetrating an upper surface and a lower surface of the pad body; and

a thermal conductive body provided in the trench of the pad body and directly contacting the first surface of the polishing platen on which the polishing pad is provided; and

a polishing head provided on the polishing pad and configured to support a substrate,

wherein each of the lower surface of the pad body and a lower surface of the thermal conductive body is directly contacting the first surface of the polishing platen,

wherein the pad body comprises a lower pad body on the polishing platen and an upper pad body on the lower pad body,

wherein the trench comprises an upper portion defined by a sidewall of the upper pad body and a lower portion defined by a sidewall of the lower pad body,

wherein the thermal conductive body is provided in the lower pad body, and

wherein the upper portion of the trench is provided as an empty space.

2 . The substrate processing apparatus of claim 1 , wherein the trench of the pad body extends from the upper surface of the pad body to a lower surface of the polishing pad such that the trench contacts the first surface of the polishing platen, and

wherein the thermal conductive body partially fills the trench of the pad body.

3 . The substrate processing apparatus of claim 1 ,

wherein a hardness of the lower pad body is greater than a hardness of the upper pad body.

4 . The substrate processing apparatus of claim 3 , wherein an upper surface of the lower pad body is coplanar with an upper surface of the thermal conductive body.

5 . The substrate processing apparatus of claim 3 , wherein the upper pad body at least partially vertically overlaps the lower pad body, and

wherein the upper pad body does not vertically overlap the thermal conductive body.

6 . The substrate processing apparatus of claim 1 , wherein the lower pad body comprises first pores,

wherein the upper pad body comprises second pores, and

wherein a density of the first pores of the lower pad body is less than a density of the second pores of the upper pad body.

7 . The substrate processing apparatus of claim 1 , wherein the thermal conductive body comprises a plurality of segments spaced apart from each other,

wherein each of the plurality of segments of the thermal conductive body has a width between about 50 μm and about 150 μm, and

wherein an interval between at least two neighboring segments of the plurality of segments of the thermal conductive body is between about 100 μm and about 200 μm.

8 . The substrate processing apparatus of claim 1 , wherein the thermal conductive body comprises a plurality of segments provided in a concentric structure.

9 . The substrate processing apparatus of claim 1 , wherein the thermal conductive body comprises:

first segments extending in a first direction that is parallel to the first surface of the polishing platen; and

second segments extending in a second direction that is parallel to the first surface of the polishing platen and that crosses the first direction.

10 . The substrate processing apparatus of claim 1 , wherein the thermal conductive body comprises a plurality of segments extending in a radial direction of the polishing pad.

11 . The substrate processing apparatus of claim 1 , wherein the thermal conductive body comprises a base comprising a polymer and a thermally conductive particle contained in the base.

12 . The substrate processing apparatus of claim 1 , further comprising a polishing slurry supply apparatus comprising a polishing slurry supply nozzle configured to supply polishing slurry to the polishing pad,

wherein the upper portion of the trench of the pad body is configured to accommodate the polishing slurry.

13 . The substrate processing apparatus of claim 1 , further comprising a medium supply device comprising a medium supply nozzle configured to supply a temperature control medium to the polishing pad,

wherein an upper part of the trench of the pad body is configured to accommodate the temperature control medium.

14 . The substrate processing apparatus of claim 1 , wherein a width of a lower portion of the thermal conductive body is greater than a width of an upper portion of the thermal conductive body,

wherein the lower portion of the thermal conductive body and the upper portion of the thermal conductive body are within the trench.

15 . A polishing pad comprising:

a pad body comprising:

a lower pad body having a first lower surface and a first upper surface;

an upper pad body on the lower pad body, the upper pad body having a second lower surface and a second upper surface; and

a trench penetrating the first lower surface of the lower pad body, the first upper surface of the lower pad body, the second lower surface of the upper pad body, and the second upper surface of the upper pad body; and

a thermal conductive body provided in the trench of the pad body and exposed through the first lower surface of the lower pad body,

wherein each of a lower surface of the thermal conductive body and the first lower surface of the lower pad body is directly contacting a surface of a polishing platen,

wherein a hardness of the lower pad body is greater than a hardness of the upper pad body,

wherein the trench comprises an upper portion defined by a sidewall of the upper pad body and a lower portion defined by a sidewall of the lower pad body,

wherein the thermal conductive body is provided in the lower pad body, and

wherein the upper portion of the trench is provided as an empty space.

16 . The polishing pad of claim 15 , wherein an upper surface of the thermal conductive body is coplanar with the first upper surface of the lower pad body, and

wherein the lower surface of the thermal conductive body is coplanar with the first lower surface of the lower pad body.

17 . The polishing pad of claim 15 , wherein the thermal conductive body comprises a first plurality of segments spaced apart from each other, and

wherein the lower pad body comprises a second plurality of segments spaced apart from each other by the thermal conductive body.

18 . A substrate processing apparatus comprising:

a polishing platen comprising a fluid channel;

a polishing pad provided on a first surface of the polishing platen, the polishing pad comprising:

a pad body including a lower pad body on the polishing platen and an upper pad body on the lower pad body, the pad body having a trench, and the trench penetrating a first lower surface of the lower pad body, a first upper surface of the lower pad body, a second lower surface of the upper pad body, and a second upper surface of the upper pad body; and

a thermal conductive body provided in the trench of the pad body; and

a polishing head provided on the polishing pad and configured to support a substrate,

wherein a lower surface of the thermal conductive body is exposed through the first lower surface of the lower pad body,

wherein each of the lower surface of the thermal conductive body and the first lower surface of the lower pad body is directly contacting the first surface of the polishing platen,

wherein a hardness of the lower pad body is greater than a hardness of the upper pad body,

wherein the trench comprises an upper portion defined by a sidewall of the upper pad body and a lower portion defined by a sidewall of the lower pad body,

wherein the thermal conductive body is provided in the lower portion of the trench, and

wherein the upper portion of the trench is provided as an empty space.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (17)