Adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures in a memory sub-system
A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.
1 . A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
receiving a request to perform a memory access operation on a set of cells addressable by a wordline of the memory device;
identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and
performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter.
2 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.
3 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a program verify operation.
4 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a read operation.
5 . The system of claim 4 , wherein performing the memory access operation on the set of cells addressable by the wordline further comprises using a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.
6 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is enabled.
7 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is disabled; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.
8 . A method comprising:
receiving a request to perform a memory access operation on a set of cells addressable by a wordline of a memory device;
identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and
performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter and a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.
9 . The method of claim 8 , further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.
10 . The method of claim 8 , further comprising:
determining that the memory access operation type comprises a program verify operation; and
responsive to determining that the memory access operation type comprises the program verify operation, performing the memory access operation on the set of cells addressable by the wordline using a second time sense parameter, wherein the second time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.
11 . The method of claim 8 , further comprising:
determining that an adaptive time sense configuration is enabled.
12 . The method of claim 8 , further comprising:
determining that an adaptive time sense configuration is disabled; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.
13 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is enabled.
14 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is disabled; and
performing the memory access operation on the set of cells addressable by the wordline using a default overdrive voltage parameter.
15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
receiving a request to perform a memory access operation on a set of cells addressable by a wordline of a memory device;
identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and
performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter.
16 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.
17 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a program verify operation.
18 . The non-transitory computer-readable storage medium of claim 17 , wherein to perform the memory access operation on the set of cells addressable by the wordline, the processing device is to perform operations further comprising using a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.
19 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is enabled.
20 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is disabled; and
performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.