Inductor component
An inductor component comprising an element body formed by laminating a plurality of insulating layers, and a helically wound coil disposed in the element body. The insulating layer contains a base material and a crystal, wherein a refractive index of each of the base material and the crystal is 1.8 or less for at least one wavelength of 350 nm or more and 450 nm or less (i.e., from 350 nm to 450 nm). The coil includes a coil wiring wound along a plane, and the coil wiring is made up of one coil conductor layer or a plurality of coil conductor layers laminated in surface contact with each other. Also, the aspect ratio of the coil conductor layer is 1.0 or more.
1 . An inductor component comprising:
an element body formed by laminating a plurality of insulating layers; and
a helically wound coil disposed in the element body, wherein
each of the insulating layers contains a base material and a crystal,
wherein
a refractive index of each of the base material and the crystal is 1.8 or less for at least one wavelength of from 350 nm to 450 nm,
the coil includes a coil wiring wound along a plane, the coil wiring is made up of a plurality of coil conductor layers laminated in surface contact with each other, a thickness of the coil conductor layer extends along a winding axis direction, a width of the coil conductor layer extends transverse to the winding axis direction, and an aspect ratio of the coil conductor layer is the thickness divided by the width and is 1.0 or more,
a cross section of each of the plurality of coil conductor layers is T-shaped, and wherein a cross section of the coil wiring has a stacked shape of T, and
a wide part of one T-shaped coil conductor layer and a narrow part of another T-shaped coil conductor layer adjacent to the one T-shaped coil conductor layer are within a single insulating layer, and the narrow part of each of the plurality of coil conductor layers are aligned with respect to a direction transverse to the winding axis direction.
2 . The inductor component according to claim 1 , wherein the aspect ratio of the coil conductor layer is from 1.0 to 2.0.
3 . The inductor component according to claim 1 , wherein the aspect ratio of the coil wiring is from 1.0 to 8.0.
4 . The inductor component according to claim 3 , wherein the aspect ratio of the coil wiring is from 1.5 to 6.0.
5 . The inductor component according to claim 3 , wherein a width of the coil wiring is 20 μm or more.
6 . The inductor component according to claim 1 , wherein a width of the coil wiring is 20 μm or more.
7 . The inductor component according to claim 1 , wherein a proportion of a difference between a maximum width and a minimum width of the coil wiring to the maximum width of the coil wiring is 20% or less.
8 . The inductor component according to claim 7 , wherein
the coil conductor layer is made up of a body portion and a head portion having a width greater than a width of the body portion, and
a proportion of a difference between the maximum width and the minimum width of the body portion to the maximum width of the body portion is 10% or less.
9 . The inductor component according to claim 1 , wherein the base material contains Si and is amorphous.
10 . The inductor component according to claim 1 , wherein the crystal is quartz.
11 . The inductor component according to claim 1 , wherein the base material is an amorphous glass containing B, Si, O, and K as main components.
12 . The inductor component according to claim 1 , wherein in a cross section of the element body, an area ratio between the base material and the crystal is in a range of 75:25 to 50:50.
13 . The inductor component according to claim 1 , wherein
the element body includes a mark layer on the outside of the insulating layer in a lamination direction,
the mark layer contains an intra-mark-layer base material that contains Si and that is amorphous and an intra-mark-layer crystal,
the mark layer contains a metal oxide, the refractive index of the metal oxide is from 1.7 to 3.0 for at least one wavelength of from 450 nm to 750 nm, the absorption coefficient of the metal oxide is 0.3 or more for at least one wavelength of from 250 nm to 350 nm, and
the refractive index of the intra-mark-layer base material is from 1.4 to 1.6 for at least one wavelength of from 450 nm to 750 nm.
14 . The inductor component according to claim 13 , wherein the intra-mark-layer crystal contains a pigment.
15 . The inductor component according to claim 13 , wherein the intra-mark-layer crystal contains a metal oxide having a spinel type crystal structure containing Co.
16 . The inductor component according to claim 1 , wherein
the element body includes a mark layer on the outside of the insulating layer in a lamination direction,
the mark layer contains an intra-mark-layer base material that contains Si and that is amorphous and an intra-mark-layer crystal that contains metal oxide, and
the metal oxide contained in the intra-mark-layer crystal contains at least one of Ti, Nb, or Ce.
17 . The inductor component according to claim 1 , wherein
the coil conductor layers have the same T shape with the narrow part in the center of the wide part.
18 . An inductor component comprising:
an element body formed by laminating a plurality of insulating layers; and
a helically wound coil disposed in the element body, wherein
each of the insulating layers contains a base material and a crystal,
wherein
a refractive index of each of the base material and the crystal is 1.8 or less for at least one wavelength of from 350 nm to 450 nm,
the coil includes a coil wiring wound along a plane, the coil wiring is made up of one coil conductor layer or a plurality of coil conductor layers laminated in surface contact with each other, and an aspect ratio of the coil conductor layer is 1.0 or more,
the element body includes a mark layer on the outside of the insulating layer in a lamination direction,
the mark layer contains an intra-mark-layer base material that contains Si and that is amorphous and an intra-mark-layer crystal that contains metal oxide, and
the metal oxide contained in the intra-mark-layer crystal contains Ti, Nb, and Ce.