Semiconductor integrated circuit, electronic device, and method for controlling semiconductor integrated circuit
Signal quality is improved in a semiconductor integrated circuit provided with a driver. The semiconductor integrated circuit includes a driver circuit, an adjustment circuit, and a control circuit. In this semiconductor integrated circuit, the driver outputs an output signal from an output node. The adjustment circuit is provided with an adjustment-side termination resistor whose one end is connected to the output node and an adjustment transistor connected to the other end of the adjustment-side termination resistor. The control circuit controls a gate voltage of the adjustment transistor to a value corresponding to a measured temperature.
1 . A semiconductor integrated circuit comprising:
a driver that outputs an output signal from an output node;
an adjustment circuit provided with an adjustment-side termination resistor whose one end is connected to the output node and an adjustment transistor connected to another end of the adjustment-side termination resistor; and
a control circuit that controls a gate voltage of the adjustment transistor to a value corresponding to a measured temperature.
2 . The semiconductor integrated circuit according to claim 1 , wherein
the adjustment transistor includes a positive-side adjustment transistor and a negative-side adjustment transistor,
the gate voltage includes a positive-side voltage and a negative-side voltage, and
the control circuit supplies a voltage, which is higher as the temperature is higher, to a gate of the positive adjustment transistor as the positive-side voltage and supplies a voltage, which is lower as the temperature is higher, to a gate of the negative adjustment transistor as the negative-side voltage.
3 . The semiconductor integrated circuit according to claim 1 , wherein the control circuit supplies a voltage, which is higher as the temperature is higher, to a gate of the adjustment transistor.
4 . The semiconductor integrated circuit according to claim 1 , wherein the control circuit supplies a voltage, which is lower as the temperature is higher, to a gate of the adjustment transistor.
5 . The semiconductor integrated circuit according to claim 1 , wherein
the adjustment circuit includes a plurality of adjustment units commonly connected to the output node, and
the adjustment transistor and the adjustment-side termination resistor are arranged in each of the plurality of adjustment units.
6 . The semiconductor integrated circuit according to claim 5 , wherein
the control circuit further controls a number of units to be driven among the plurality of adjustment units.
7 . The semiconductor integrated circuit according to claim 1 , further comprising
a power-supply-side regulator that suppresses a fluctuation of a power supply voltage of each of the driver and the adjustment circuit.
8 . The semiconductor integrated circuit according to claim 1 , further comprising
a ground-side regulator that suppresses a fluctuation of a ground voltage of each of the driver and the adjustment circuit.
9 . The semiconductor integrated circuit according to claim 1 , further comprising:
a power-supply-side regulator that suppresses a fluctuation of a power supply voltage of each of the driver and the adjustment circuit; and
a ground-side regulator that suppresses a fluctuation of a ground voltage of each of the driver and the adjustment circuit.
10 . The semiconductor integrated circuit according to claim 1 , wherein
the driver receives an input of a differential signal as an input signal, and
the driver outputs a differential signal as the output signal on a basis of the input signal.
11 . The semiconductor integrated circuit according to claim 1 , wherein
the driver includes a plurality of driver units, and
a predetermined number of driver units among the plurality of driver units are driven in accordance with a predetermined control signal.
12 . The semiconductor integrated circuit according to claim 11 , wherein
each of the plurality of driver units includes:
a p-channel metal oxide semiconductor (pMOS) transistor and an n-channel MOS (nMOS) transistor which are connected in series between a power supply node and a ground node; and
a driver-side termination resistor inserted between the output node and a connection node between the pMOS transistor and the nMOS transistor.
13 . The semiconductor integrated circuit according to claim 11 , wherein
each of the plurality of driver units includes:
a pair of nMOS transistors connected in series between a power supply node and a ground node; and
a driver-side termination resistor inserted between the output node and a connection node of the pair of nMOS transistors.
14 . The semiconductor integrated circuit according to claim 11 , wherein
each of the plurality of driver units includes:
a pair of pMOS transistors connected in series between a power supply node and a ground node; and
a driver-side termination resistor inserted between the output node and a connection node of the pair of pMOS transistors.
15 . An electronic device comprising:
a driver that outputs an output signal from an output node;
an adjustment circuit provided with an adjustment-side termination resistor whose one end is connected to the output node and an adjustment transistor connected to another end of the adjustment-side termination resistor;
a control circuit that controls a gate voltage of the adjustment transistor to a value corresponding to a measured temperature; and
a reception circuit that receives the output signal.
16 . A method for controlling a semiconductor integrated circuit, the method comprising:
a procedure in which a driver outputs an output signal from an output node; and
a control procedure in which a control circuit controls a gate voltage of an adjustment transistor in an adjustment circuit to a value corresponding to a measured temperature, the adjustment circuit being provided with an adjustment-side termination resistor whose one end is connected to the output node and the adjustment transistor connected to another end of the adjustment-side termination resistor.