Solid-state imaging apparatus, imaging apparatus, and imaging system
A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.
1. A solid-state imaging apparatus, comprising:
a photoelectric conversion unit including a material having a smaller band gap energy than silicon;
and a circuit board joined to the photoelectric conversion unit,
wherein the circuit board includes:
a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit;
and a thermometer circuit that detects a temperature of the circuit board,
wherein the pixel signal generation circuit is arranged in a first region on a first surface of the circuit board,
wherein the photoelectric conversion unit is joined to the first region of the circuit board,
and wherein the thermometer circuit is formed in a region other than the first region on the first surface of the circuit board.
2. The solid-state imaging apparatus according to claim 1 , further comprising
a conversion circuit that converts an analog signal output from the thermometer circuit into a digital signal.
3. The solid-state imaging apparatus according to claim 1 , wherein
the photoelectric conversion unit includes a compound semiconductor.
4. The solid-state imaging apparatus according to claim 1 , wherein
the photoelectric conversion unit contains at least one of InGaP, InAlP, InGaAs, InAlAs, a compound semiconductor having a chalcopyrite structure, amorphous silicon, germanium, a quantum dot photoelectric conversion film, or an organic photoelectric conversion film.
5. The solid-state imaging apparatus according to claim 1 , wherein
the thermometer circuit includes at least one of a silicon diode or a PNP transistor.
6. The solid-state imaging apparatus according to claim 1 , comprising
a plurality of thermometer circuits.
7. A solid-state imaging apparatus, comprising:
a photoelectric conversion unit including a material having a smaller band gap energy than silicon;
and a circuit board joined to the photoelectric conversion unit,
wherein the circuit board includes:
a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit;
and a thermometer circuit that detects a temperature of the circuit board,
wherein the pixel signal generation circuit is arranged in a first region on a first surface of the circuit board,
wherein the photoelectric conversion unit is joined to the first region of the circuit board,
wherein the circuit board includes a second region which is located around the first region on the first surface of the circuit board and in which a logic circuit that processes the pixel signal is arranged,
and wherein the thermometer circuit is arranged in a vicinity of the second region.
8. The solid-state imaging apparatus according to claim 7 , wherein the thermometer circuit is arranged between the first region and the second region.
9. An imaging apparatus, comprising:
a solid-state imaging apparatus, including:
a photoelectric conversion unit including a material having a smaller band gap energy than silicon; and
a circuit board joined to the photoelectric conversion unit,
wherein the circuit board includes:
a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and
a thermometer circuit that detects a temperature of the circuit board;
a package that accommodates the solid-state imaging apparatus; and
a temperature control element that is arranged in the package and arranged on a side of a second surface of the circuit board opposite to a first surface on which the pixel signal generation circuit and the thermometer circuit are arranged.
10. The imaging apparatus according to claim 9 , wherein
the thermometer circuit is arranged in a region overlapping the temperature control element in a direction perpendicular to the first surface.
11. The imaging apparatus according to claim 9 , wherein
the temperature control element is a Peltier element.
12. An imaging system, comprising:
a solid-state imaging apparatus, including:
a photoelectric conversion unit including a material having a smaller band gap energy than silicon; and
a circuit board joined to the photoelectric conversion unit,
wherein the circuit board includes:
a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and
a thermometer circuit that detects a temperature of the circuit board, and
a temperature control element for controlling a temperature of the solid-state imaging apparatus;
a temperature control apparatus that controls the temperature control element; and
a controlling apparatus that controls the solid-state imaging apparatus and the temperature control apparatus,
wherein the controlling apparatus controls the temperature control apparatus on a basis of the temperature detected by the thermometer circuit.
13. The imaging system according to claim 12 , wherein
the solid-state imaging apparatus further includes a conversion circuit that converts an analog signal output from the thermometer circuit into a digital signal,
the imaging apparatus further includes a package that accommodates the solid-state imaging apparatus and the temperature control element,
the package includes a terminal for transmitting or receiving a digital signal between the solid-state imaging apparatus and the controlling apparatus, and
the solid-state imaging apparatus transmits the digital signal to the controlling apparatus through the terminal.
14. The imaging system according to claim 13 , wherein
the solid-state imaging apparatus and the controlling apparatus are connected through an inter-integrated circuit (I2C) or a serial peripheral interface (SPI).