System and method for omnidirectional real time detection of photolithography characteristics
An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.
1 . A method, comprising:
generating extreme ultraviolet light by irradiating droplets with a laser within an extreme ultraviolet light generation chamber;
generating sensor signals with a plurality of vibration sensors coupled to the extreme ultraviolet light generation chamber; and
adjusting a timing of laser pulses from the laser based on the sensor signals, wherein the droplets are tin.
2 . The method of claim 1 , wherein the plurality of vibration sensors are coupled to a collector mirror of the extreme ultraviolet light generation chamber.
3 . The method of claim 2 , comprising:
analyzing the sensor signals; and
adjusting a parameter of extreme ultraviolet light generation based on the sensor signals.
4 . The method of claim 3 , further comprising determining characteristics of the plasma based on the sensor signals.
5 . The method of claim 4 , wherein adjusting a parameter of extreme ultraviolet light generation includes adjusting a parameter of the droplets.
6 . The method of claim 4 , further comprising:
detecting a distribution of droplet debris on the collector mirror based on the sensor signals; and
determining characteristics of the plasma based on the distribution of droplet debris.
7 . The method of claim 4 , wherein determining characteristics of the plasma includes generating a model of the plasma.
8 . The method of claim 7 , wherein irradiating the droplets with laser light includes:
irradiating each droplet with a first laser pulse; and
irradiating each droplet with a second laser pulse, wherein the sensor signals are indicative of shockwaves from the first laser pulse and shockwaves from the second laser pulse.
9 . The method of claim 8 , further comprising determining characteristics of the plasma based on the shockwaves from the first laser pulse and the shockwaves from the second laser pulse.
10 . The method of claim 1 , further comprising:
generating sensor data based on the sensor signals;
passing the sensor signals to an analysis model trained with a machine learning process;
generating, with the analysis model, parameter adjustment data identifying the parameter of radiation generation to be adjusted; and
adjusting the parameter of radiation generation responsive to parameter adjustment data.
11 . A method, comprising:
training an analysis model with a machine learning process to determine photolithography parameter adjustment data;
generating, during an extreme ultraviolet light photolithography process, sensor signals with an array of vibration sensors coupled to a photolithography light generation chamber;
generating parameter adjustment data with the analysis mode by processing the sensor signals with the analysis model; and
adjusting generation of extreme ultraviolet light based on the parameter adjustment data.
12 . The method of claim 11 , further comprising:
storing historical radiation generation data corresponding to data from a plurality of previously performed extreme ultraviolet light generation processes; and
training, with the historical extreme ultraviolet light generation data, the analysis model with the machine learning process based on the historical radiation generation data.
13 . The method of claim 11 , further comprising:
coupling a plurality of vibration sensors to a collector mirror of an extreme ultraviolet photolithography chamber;
generating extreme ultraviolet light by irradiating droplets with laser light within the photolithography generation chamber;
generating, with the vibration sensors, sensor signals indicating a distribution of debris from the droplets on the collector mirror; and
adjusting one or more parameters of extreme ultraviolet light generation based on the distribution of debris.
14 . The method of claim 11 , further comprising performing a Fourier transform on the sensor signals.
15 . An extreme ultraviolet photolithography system, comprising:
a photolithography light generation chamber;
a droplet generator configured to output droplets into an extreme ultraviolet light generation chamber;
a laser configured to generate a plasma from the droplets by irradiating the droplets with laser light, wherein the droplets are tin;
a plurality of vibration sensors coupled to the photolithography light generation chamber configured to generate sensor signals; and
a control system configured to analyze the sensor signals and to adjust a parameter of photolithography light generation based on the sensor signals.
16 . The system of claim 15 , comprising:
a collector mirror configured to focus extreme ultraviolet light emitted from the plasma; and
a plurality of first vibration sensors coupled to the collector mirror.
17 . The extreme ultraviolet photolithography system of claim 16 , further comprising:
an enclosure cone coupled to the collector mirror, the enclosure cone and the collector mirror collectively defining the extreme ultraviolet light generation chamber; and
a plurality of second vibration sensors coupled to the enclosure cone.
18 . The system of claim 16 , wherein the plurality of first vibration sensors are arrayed in a grid on a backside of the collector mirror.
19 . The system of claim 15 , wherein the control system includes an analysis model trained with a machine learning process and configured to analyze the sensor signals.
20 . The method of claim 1 , further comprising performing a Fourier transform on the sensor signals.