IP Library › Granted Patent US 12,078,933
Granted Patent B2
US 12,078,933 · App. 17/501,848 · Granted Sep 3, 2024

System and method for omnidirectional real time detection of photolithography characteristics

Inventors: Tai-Yu Chen (Hsinchu, TW); Shang-Chieh Chien (Hsinchu, TW); Sheng-Kang Yu (Hsinchu, TW); Li-Jui Chen (Hsinchu, TW); Heng-Hsin Liu (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
G03F7/70033G03F7/70025G03F7/709G06N20/00
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Quick Facts
Patent No.
US 12,078,933
App. No.
17/501,848
Granted
Sep 3, 2024
Kind
B2
Abstract

An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

Claims (48)

1. A method, comprising:

performing a photolithography process by generating extreme ultraviolet light in an extreme ultraviolet light generation chamber, wherein generating extreme ultraviolet light includes generating extreme ultraviolet light by generating a plasma from droplets within the extreme ultraviolet light generation chamber;

generating sensor signals with a plurality of vibration sensors coupled to the extreme ultraviolet light generation chamber, wherein the plurality of vibration sensors are coupled to a collector mirror of the extreme ultraviolet light generation chamber;

analyzing the sensor signals; and

adjusting a parameter of extreme ultraviolet light generation based on the sensor signals.

2. The method of claim 1 , further comprising determining characteristics of the plasma based on the sensor signals.

3. The method of claim 2 , wherein generating the plasma includes: irradiating the droplets with laser light, wherein adjusting a parameter of extreme ultraviolet light generation includes adjusting a parameter of the laser light based on the sensor signals.

4. The method of claim 2 , wherein adjusting a parameter of extreme ultraviolet light generation includes adjusting a parameter of the droplets.

5. The method of claim 2 , further comprising:

detecting a distribution of droplet debris on the collector mirror based on the sensor signals; and

determining characteristics of the plasma based on the distribution of droplet debris.

6. The method of claim 5 , wherein determining characteristics of the plasma includes generating a model of the plasma.

7. The method of claim 5 , wherein irradiating the droplets with laser light includes:

irradiating each droplet with a first laser pulse; and

irradiating each droplet with a second laser pulse, wherein the sensor signals are indicative of shockwaves from the first laser pulse and shockwaves from the second laser pulse.

8. The method of claim 7 , further comprising determining characteristics of the plasma based on the shockwaves from the first laser pulse and the shockwaves from the second laser pulse.

9. The method of claim 1 , further comprising:

generating sensor data based on the sensor signals;

passing the sensor signals to an analysis model trained with a machine learning process;

generating, with the analysis model, parameter adjustment data identifying the parameter of radiation generation to be adjusted; and

adjusting the parameter of radiation generation responsive to parameter adjustment data.

10. The method of claim 1 , wherein the droplets are tin.

11. A method, comprising:

coupling a plurality of vibration sensors to a collector mirror of an extreme ultraviolet photolithography system;

generating extreme ultraviolet light by irradiating droplets with laser light within an extreme ultraviolet light generation chamber;

generating, with the vibration sensors, sensor signals indicating a distribution of debris from the droplets on the collector mirror; and

adjusting one or more parameters of extreme ultraviolet light generation based on the distribution of debris.

12. The method of claim 11 , further comprising:

storing historical radiation generation data corresponding to data from a plurality of previously performed extreme ultraviolet light generation processes; and

training, with the historical extreme ultraviolet light generation data, an analysis model with a machine learning process to generate parameter adjustment data for adjusting parameters of extreme ultraviolet light generation processes.

13. The method of claim 12 , further comprising:

generating sensor data from the sensor signals;

providing the sensor data to the analysis model;

generating, with the analysis model, parameter adjustment data; and

adjusting extreme ultraviolet generation parameters in accordance with the parameter adjustment data.

14. The method of claim 12 , wherein the droplets are tin.

15. The method of claim 11 , further comprising performing a Fourier transform on the sensor signals.

16. An extreme ultraviolet photolithography system, comprising:

a droplet generator configured to output droplets into an extreme ultraviolet light generation chamber;

a laser configured to generate a plasma from the droplets by irradiating the droplets with laser light;

a collector mirror configured to focus extreme ultraviolet light emitted from the plasma; and

a plurality of first vibration sensors coupled to the collector mirror.

17. The extreme ultraviolet photolithography system of claim 16 , further comprising:

an enclosure cone coupled to the collector mirror, the enclosure cone and the collector mirror collectively defining the extreme ultraviolet light generation chamber; and

a plurality of second vibration sensors coupled to the enclosure cone.

18. The system of claim 16 , wherein the plurality of first vibration sensors are arrayed in a grid on a backside of the collector mirror.

19. The system of claim 16 , further comprising a control system configured to receive sensor signals from the first vibration sensors, to analyze the sensor signals, and to adjust parameters of one or both of the droplet generator and the laser based on the sensor signals.

20. The system of claim 19 , wherein the control system includes an analysis model trained with a machine learning process and configured to analyze the sensor signals.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2021
From: CHEN, TAI-YU; CHIEN, SHANG-CHIEH; YU, SHENG-KANG; CHEN, LI-JUI; LIU, HENG-HSIN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 057823/0738 →
Continuity (2)
Provisional Application 63151216 · Feb 19, 2021
Related Publication 20220269182A1 · Aug 25, 2022
Cited By (1)
US 12,560,868