IP Library Granted Patent US 12,563,314
Granted Patent B2
US 12,563,314 · App. 18/679,827 · Granted Feb 24, 2026

Imaging apparatus and electronic device

Inventor: Luonghung Asakura (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H04N25/59H04N25/46H04N25/75H04N25/76H04N25/771H04N25/78H10F39/813H10F39/199
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Quick Facts
Patent No.
US 12,563,314
App. No.
18/679,827
Granted
Feb 24, 2026
Kind
B2
Abstract

A first and second pixel units that perform FD addition are provided. The first pixel unit includes: a first switch transistor of which one source/drain electrode is connected to an FD; and a reset transistor that is connected between another source/drain electrode of the first switch transistor and a power supply node. The second pixel unit includes: a second switch transistor of which one source/drain electrode is connected to an FD; a third switch transistor of which one source/drain electrode is connected to another source/drain electrode of the second switch transistor; and a capacitive element that is connected between another source/drain electrode of the third switch transistor and a reference potential node. The respective other source/drain electrodes of the first switch transistor and the second switch transistor are electrically connected with each other.

Claims (28)

1 . A light-detecting device comprising:

a first pixel circuit including a photodiode, a first floating diffusion, a first transistor, a second transistor, a first amplification transistor and a first selection transistor;

a second pixel circuit including a photodiode, a second floating diffusion, a third transistor, a fourth transistor, a second amplification transistor and a second selection transistor;

a wiring coupled to the first floating diffusion and the second floating diffusion; and

a first capacitor coupled to the first floating diffusion and the second floating diffusion, wherein

the first floating diffusion is coupled to the second floating diffusion via the first transistor, the third transistor, and the wiring, and

the first transistor, the second transistor, the first amplification transistor, and the first selection transistor are disposed along a first direction in a plan view.

2 . The light-detecting device of claim 1 , wherein at least one terminal of the first capacitor is disposed in a wiring layer.

3 . The light-detecting device of claim 1 , wherein the first floating diffusion and the second floating diffusion share the second transistor.

4 . The light-detecting device of claim 3 , wherein a terminal of the second transistor is coupled to a predetermined power supply voltage.

5 . The light-detecting device of claim 1 , further comprising:

a second capacitor selectively coupled to the first floating diffusion and the second floating diffusion.

6 . The light-detecting device of claim 5 , wherein at least one terminal of the second capacitor is disposed in a wiring layer.

7 . The light-detecting device of claim 1 , wherein the first selection transistor is coupled to a vertical signal line.

8 . The light-detecting device of claim 7 , wherein the first floating diffusion is coupled to a gate of the first amplification transistor, and the second floating diffusion is coupled to a gate of the second amplification transistor.

9 . The light-detecting device of claim 1 , wherein the photodiode included in the first pixel circuit is one of a first plurality of photodiodes in the first pixel circuit.

10 . The light-detecting device of claim 9 , wherein the photodiode included in the second pixel circuit is one of a second plurality of photodiodes in the second pixel circuit.

11 . The light-detecting device of claim 10 , wherein the first floating diffusion is shared by the first plurality of photodiodes and the second floating diffusion is shared by the second plurality of photodiodes.

12 . The light-detecting device of claim 11 , wherein the first plurality of photodiodes are respectively coupled to the first floating diffusion through a corresponding first plurality of transfer transistors, and the second plurality of photodiodes are respectively coupled to the second floating diffusion through a corresponding second plurality of transfer transistors.

13 . The light-detecting device of claim 9 , wherein the first plurality of photodiodes are respectively coupled to the first floating diffusion through a corresponding first plurality of transfer transistors.

14 . The light-detecting device of claim 1 , wherein the first floating diffusion and the second floating diffusion share the second transistor, and a terminal of the second transistor, a terminal of the first amplification transistor and a terminal of the second amplification transistor are coupled to a same predetermined power supply voltage.

15 . The light-detecting device of claim 1 , wherein the first capacitor is selectively coupled to the first floating diffusion via the fourth transistor, the wiring, and the second transistor, and is selectively coupled to the second floating diffusion via the third transistor.

16 . The light-detecting device of claim 1 , wherein the first capacitor is selectively coupled to the first floating diffusion and the second floating diffusion.

17 . The light-detecting device of claim 1 , wherein the second transistor is a reset transistor.

18 . The light-detecting device of claim 1 , wherein the first transistor is a first switch transistor.

19 . The light-detecting device of claim 1 , wherein the third transistor is a second switch transistor.

20 . The light-detecting device of claim 1 , wherein the fourth transistor is a third switch transistor.

21 . The light-detecting device of claim 1 , wherein the first transistor, the second transistor, the first amplification transistor, and the first selection transistor are disposed in order along the first direction in the plan view.

Priority Claims (1)
JP 2018-209461 · Nov 7, 2018 · national
Continuity (3)
Continuation 17732925 · Apr 29, 2022
Continuation 17281423
Related Publication 20250119656A1 · Apr 10, 2025
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