Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device
A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.
1 . A heteroepitaxial semiconductor device, comprising:
a bulk semiconductor substrate;
a seed layer comprising a first semiconductor material, the seed layer being arranged at a first substrate side of the bulk semiconductor substrate, wherein the seed layer comprises a first side facing the bulk semiconductor substrate, a second side arranged opposite to the first side, and lateral sides connecting the first side and the second side;
a separation layer arranged between the bulk semiconductor substrate and the seed layer;
a heteroepitaxial structure grown on the second side of the seed layer and comprising a second semiconductor material that is different from the first semiconductor material; and
a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure,
wherein the dielectric material layer covers the lateral sides of the seed layer,
wherein the bulk semiconductor substrate comprises a depression, and
wherein the separation layer and the seed layer are arranged within the depression.
2 . The heteroepitaxial semiconductor device of claim 1 ,
wherein the heteroepitaxial structure comprises a trunk portion connected to the seed layer and a top portion arranged on top of the trunk portion, and
wherein a lateral extension of the trunk portion is smaller than a lateral extension of the top portion, wherein the lateral extension of the trunk portion and the lateral extension of the top portion are measured parallel to the second side of the seed layer.
3 . The heteroepitaxial semiconductor device of claim 2 ,
wherein the dielectric material layer comprises a lower dielectric material layer and an upper dielectric material layer, and
wherein the trunk portion is arranged within the lower dielectric material layer and the top portion is arranged within the upper dielectric material layer.
4 . The heteroepitaxial semiconductor device of claim 2 ,
wherein the top portion has an essentially pyramidal shape.
5 . The heteroepitaxial semiconductor device of claim 2 ,
wherein the trunk portion has an aspect ratio in a range of 100:1 to 1:100.
6 . The heteroepitaxial semiconductor device of claim 2 ,
wherein the trunk portion has an aspect ratio in a range of 1:1 to 1:10.
7 . The heteroepitaxial semiconductor device of claim 1 ,
wherein the seed layer has lateral dimensions measured parallel to the second side of the seed layer of 10 μm or less.
8 . The heteroepitaxial semiconductor device of claim 1 ,
wherein the first semiconductor material is silicon and the second semiconductor material is germanium.
9 . The heteroepitaxial semiconductor device of claim 1 ,
wherein the separation layer comprises a buried dielectric material layer.
10 . The heteroepitaxial semiconductor device of claim 1 , wherein a gap is defined between the lateral sides of the seed layer and lateral sides of the depression such that the gap completely surrounds the seed layer, laterally.
11 . The heteroepitaxial semiconductor device of claim 10 , wherein the dielectric material layer is arranged in the gap to electrically isolate the seed layer and the bulk semiconductor substrate.
12 . The heteroepitaxial semiconductor device of claim 1 , wherein the dielectric material layer is arranged in a gap that laterally separates the seed layer and the bulk semiconductor substrate to electrically isolate the seed layer and the bulk semiconductor substrate.
13 . The heteroepitaxial semiconductor device of claim 1 , further comprising:
a diode structure arranged on the seed layer; and
a transistor structure arranged on the bulk semiconductor substrate, the transistor structure being part of a pixel read out structure.
14 . An image sensor, comprising:
a heteroepitaxial semiconductor device comprising:
a bulk semiconductor substrate;
a seed layer comprising a first semiconductor material, the seed layer being arranged at a first substrate side of the bulk semiconductor substrate, wherein the seed layer comprises a first side facing the bulk semiconductor substrate, a second side arranged opposite to the first side, and lateral sides connecting the first side and the second side;
a separation layer arranged between the bulk semiconductor substrate and the seed layer;
a heteroepitaxial structure grown on the second side of the seed layer and comprising a second semiconductor material that is different from the first semiconductor material; and
a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure,
wherein the dielectric material layer covers the lateral sides of the seed layer,
wherein the bulk semiconductor substrate comprises a depression,
wherein the separation layer and the seed layer are arranged within the depression, and
wherein the heteroepitaxial structure forms a photosensitive part of a pixel of the image sensor.
15 . The image sensor of claim 14 ,
wherein the image sensor is a time of flight image sensor.
16 . An image sensor, comprising:
a bulk semiconductor substrate;
a seed layer comprising a first semiconductor material, the seed layer being arranged at a first substrate side of the bulk semiconductor substrate, wherein the seed layer comprises a first side facing the bulk semiconductor substrate, a second side arranged opposite to the first side, and lateral sides connecting the first side and the second side;
a separation layer arranged between the bulk semiconductor substrate and the seed layer;
a heteroepitaxial structure grown on the second side of the seed layer and comprising a second semiconductor material that is different from the first semiconductor material;
a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer covers the lateral sides of the seed layer;
a further seed layer arranged coplanar with the seed layer and arranged laterally at a distance from the seed layer,
wherein the first side of the seed layer is coplanar with a first side of the further seed layer,
wherein the second side of the seed layer is coplanar with a second side of the further seed layer, and
wherein the dielectric material layer is arranged in a gap that laterally separates the seed layer and the further seed layer to electrically isolate the seed layer and the further seed layer;
a diode structure arranged on the seed layer; and
a transistor structure arranged on the further seed layer, the transistor structure being part of a pixel read out structure.
17 . The image sensor of claim 16 ,
wherein the diode structure includes a first poly gate arranged on the seed layer, and
wherein the transistor structure includes a second poly gate arranged on the further seed layer.