Electronic component and method for manufacturing electronic component
An electronic component that includes: a base body; and an external electrode that covers a part of an outer surface of the base body, the external electrode including: an underlying electrode containing copper and silicon; and a metal layer that covers an outer surface of the underlying electrode, wherein at least some of the copper has copper particles with a flattening ratio of 0.5 or less, and when the underlying electrode is viewed in section, the silicon is distributed so as to fill gaps between the copper particles.
1 . An electronic component comprising:
a base body; and
an external electrode that covers a part of an outer surface of the base body, the external electrode comprising:
an underlying electrode containing copper and silicon; and
a metal layer that covers an outer surface of the underlying electrode, wherein
at least some of the copper comprises copper particles with a flattening ratio of 0.5 or less, and
when the underlying electrode is viewed in section, the silicon is distributed to fill a gap between the copper particles.
2 . The electronic component according to claim 1 , wherein when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, a proportion of the silicon in the first part is higher than a proportion of the silicon in the second part.
3 . The electronic component according to claim 2 , wherein when a shortest distance from a surface on the first side closer to the base body opposite to the outer surface of the underlying electrode to the outer surface of the underlying electrode is defined as a thickness, an average value for the thickness of the underlying electrodes is 500 nm to 2000 nm.
4 . The electronic component according to claim 2 , wherein an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
5 . The electronic component according to claim 1 , wherein, when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, and when a shortest distance from a surface on the first side closer to the base body opposite to the outer surface of the underlying electrode to the outer surface of the underlying electrode is defined as a thickness, an average value for the thickness of the underlying electrodes is 500 nm to 2000 nm.
6 . The electronic component according to claim 5 , wherein an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
7 . The electronic component according to claim 1 , wherein when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
8 . The electronic component according to claim 1 , wherein the silicon is a silicone resin.
9 . The electronic component according to claim 1 , wherein a ratio by weight of the copper to the silicon in the underlying electrode is 0.5 to 2.
10 . A method for manufacturing an electronic component, the method comprising: preparing a base body; applying a conductor paste containing a copper component and a silicon component to an outer surface of the base body; heating the base body with the conductor paste applied thereto to convert the conductor paste to an underlying electrode; and immersing the base body with the underlying electrode formed thereon in a plating solution to form a metal layer on an outer surface of the underlying electrode, wherein a curing onset temperature of the silicon component is higher than a sintering onset temperature of the copper component, and a difference between the curing onset temperature of the silicon component and the sintering onset temperature of the copper component is 100 degrees or less, wherein at least some of the copper comprises copper particles with a flattening ratio of 0.5 or less, and when the underlying electrode is viewed in section, the silicon is distributed to fill a gap between the copper particles.
11 . The method for manufacturing an electronic component according to claim 10 , wherein when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, a proportion of the silicon in the first part is higher than a proportion of the silicon in the second part.
12 . The method for manufacturing an electronic component according to claim 11 , wherein when a shortest distance from a surface on the first side closer to the base body opposite to the outer surface of the underlying electrode to the outer surface of the underlying electrode is defined as a thickness, an average value for the thickness of the underlying electrodes is 500 nm to 2000 nm.
13 . The method for manufacturing an electronic component according to claim 11 , wherein an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
14 . The method for manufacturing an electronic component according to claim 10 , wherein, when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, and when a shortest distance from a surface on the first side closer to the base body opposite to the outer surface of the underlying electrode to the outer surface of the underlying electrode is defined as a thickness, an average value for the thickness of the underlying electrodes is 500 nm to 2000 nm.
15 . The method for manufacturing an electronic component according to claim 14 , wherein an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
16 . The method for manufacturing an electronic component according to claim 10 , wherein when the underlying electrode is bisected into a first part located on a first side closer to the base body and a second part on a second side opposite to the base body, an average value of particle sizes of the copper particles in the first part is smaller than an average value of particle sizes of the copper particles in the second part.
17 . The method for manufacturing an electronic component according to claim 10 , wherein the silicon is a silicone resin.
18 . The method for manufacturing an electronic component according to claim 10 , wherein a ratio by weight of the copper to the silicon in the underlying electrode is 0.5 to 2.