Threshold voltage tuning for nanoribbon-based transistors
Fabrication methods that may provide greater versatility in tuning threshold voltage of transistors implemented in different nanoribbons within a given stack and in tuning threshold voltage of transistors implemented in adjacent nanoribbon stacks, as well as corresponding devices, are disclosed. An example fabrication method includes selectively doping portions of semiconductor layers from which individual nanoribbons will be formed later. The selective doping is performed on a layer-by-layer basis, i.e., after a given semiconductor layer is deposited and before the next layer is deposited. In this manner, some nanoribbons of a given nanoribbon stack may be doped, while other nanoribbons of the same stack may be substantially undoped, or, more generally, different nanoribbons of a given nanoribbon stack may have different dopant concentrations. The differences in the dopant concentration of different nanoribbons within the stack advantageously allows forming transistors with different threshold voltages in a single nanoribbon stack.
1 . An integrated circuit (IC) device, comprising:
a support structure; and
a nanoribbon stack, including a plurality of nanoribbons stacked above one another over the support structure, the plurality of nanoribbons including at least a first nanoribbon, a second nanoribbon, and a third nanoribbon,
wherein:
the first nanoribbon includes a first semiconductor material with dopants at a first dopant concentration,
the second nanoribbon includes a second semiconductor material with dopants at a second dopant concentration,
the first dopant concentration is at least 2 times different from the second dopant concentration,
the second nanoribbon is between the first nanoribbon and the third nanoribbon with no other nanoribbons in between, and
a distance between the second nanoribbon and the first nanoribbon is different from a distance between the second nanoribbon and the third nanoribbon.
2 . The IC device according to claim 1 , wherein:
the second dopant concentration is lower than about 10 16 dopants per cubic centimeter, and
the first dopant concentration is greater than about 10 17 dopants per cubic centimeter.
3 . The IC device according to claim 2 , wherein the first nanoribbon is between the support structure and the second nanoribbon.
4 . The IC device according to claim 2 , wherein the second nanoribbon is between the support structure and the first nanoribbon.
5 . The IC device according to claim 1 , wherein the second semiconductor material is different from the first semiconductor material.
6 . The IC device according to claim 1 , wherein:
the nanoribbon stack is a first nanoribbon stack,
the plurality of nanoribbons is a first plurality of nanoribbons,
the IC device further includes a second nanoribbon stack, proximate the first nanoribbon stack and including a second plurality of nanoribbons stacked above one another over the support structure, the second plurality of nanoribbons including at least a third nanoribbon and a fourth nanoribbon,
a projection of the second plurality of nanoribbons onto a plane of the support structure is substantially parallel to a projection of the first plurality of nanoribbons onto the plane of the support structure,
a distance between the third nanoribbon and the support structure is substantially equal to a distance between the first nanoribbon and the support structure, and
a distance between the fourth nanoribbon and the support structure is substantially equal to a distance between the second nanoribbon and the support structure.
7 . The IC device according to claim 6 , wherein a distance between the first nanoribbon stack and the second nanoribbon stack is less than about 100 nanometers.
8 . The IC device according to claim 6 , wherein:
the third nanoribbon includes the first semiconductor material with dopants at a third dopant concentration, and
the third dopant concentration is different from the first dopant concentration.
9 . The IC device according to claim 8 , wherein the third dopant concentration is substantially equal the second dopant concentration.
10 . The IC device according to claim 6 , wherein a width of the first nanoribbon stack is different from a width of the second nanoribbon stack.
11 . The IC device according to claim 6 , wherein a gate electrode material transistors of the first nanoribbon stack is different from a gate electrode material transistors of the second nanoribbon stack.
12 . The IC device according to claim 1 , further including:
a die; and
a further component coupled to the die,
wherein:
the further component includes one of another die, an interposer, a package substrate, or a circuit board, and
the die includes the support structure and the nanoribbon stack.
13 . An integrated circuit (IC) device, comprising:
a first nanoribbon stack comprising a first nanoribbon, a second nanoribbon stacked above the first nanoribbon, and a third nanoribbon stacked above the second nanoribbon; and
a second nanoribbon stack proximate the first nanoribbon stack and comprising at least a fourth nanoribbon and a fifth nanoribbon stacked above the fourth nanoribbon,
wherein:
the second nanoribbon is between the first nanoribbon and the third nanoribbon with no other nanoribbons in between,
a distance between the second nanoribbon and the first nanoribbon is different from a distance between the second nanoribbon and the third nanoribbon,
the fourth nanoribbon is substantially parallel to the first nanoribbon,
the fourth nanoribbon is substantially coplanar with the first nanoribbon,
the first nanoribbon and the second nanoribbon include a first semiconductor material,
the second nanoribbon includes a second semiconductor material,
a dopant concentration of dopants of the first nanoribbon is different from a dopant concentration of dopants of the fourth nanoribbon, and
the dopant concentration of the dopants of the fourth nanoribbon is substantially equal a dopant concentration of dopants of the second nanoribbon.
14 . The IC device according to claim 13 , wherein:
the dopant concentration of the dopants of the first nanoribbon is at least 2 times different from the dopant concentration of the dopants of the second nanoribbon.
15 . The IC device according to claim 13 , further including:
a die; and
a further component coupled to the die,
wherein:
the further component includes one of another die, an interposer, a package substrate, or a circuit board, and
the die includes the first nanoribbon stack and the second nanoribbon stack.
16 . An integrated circuit (IC) device, comprising:
a first nanoribbon stack comprising at least a first nanoribbon; and
a second nanoribbon stack comprising at least a second nanoribbon,
wherein:
the second nanoribbon stack is substantially parallel to the first nanoribbon stack,
the second nanoribbon is substantially coplanar with the first nanoribbon,
a dopant concentration of dopants of the first nanoribbon is different from a dopant concentration of dopants of the second nanoribbon,
the first nanoribbon stack further includes a third nanoribbon,
either the third nanoribbon is stacked above the first nanoribbon or the first nanoribbon is stacked above the third nanoribbon, and
the dopant concentration of the dopants of the second nanoribbon is substantially equal to a dopant concentration of dopants of the third nanoribbon.
17 . The IC device according to claim 16 , wherein:
the dopant concentration of the dopants of the first nanoribbon is at least 2 times different from the dopant concentration of the dopants of the third nanoribbon.
18 . The IC device according to claim 16 , wherein:
the third nanoribbon is stacked above the first nanoribbon,
the first nanoribbon stack further includes a fourth nanoribbon stacked above the third nanoribbon,
the third nanoribbon is between the first nanoribbon and the fourth nanoribbon with no other nanoribbons in between, and
a distance between the third nanoribbon and the first nanoribbon is different from a distance between the third nanoribbon and the fourth nanoribbon.
19 . The IC device according to claim 16 , wherein:
the third nanoribbon is stacked above the first nanoribbon,
the first nanoribbon stack further includes a fourth nanoribbon stacked above the third nanoribbon, and
a distance between the third nanoribbon and the first nanoribbon is different from a distance between the third nanoribbon and the fourth nanoribbon.
20 . The IC device according to claim 16 , further including:
a die; and
a further component coupled to the die,
wherein:
the further component includes one of another die, an interposer, a package substrate, or a circuit board, and
the die includes the first nanoribbon stack and the second nanoribbon stack.