Processing tool and method
Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.
1 . A method comprising:
supporting a semiconductor wafer along a periphery of the semiconductor wafer with a top surface of an electrically grounded conductive member; and
spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.
2 . The method of claim 1 , further comprising:
receiving the semiconductor wafer with catch pins, wherein the semiconductor wafer is distanced from the electrically grounded conductive member; and
closing the catch pins, wherein when the catch pins are closed the periphery of the semiconductor wafer contacts the electrically grounded conductive member.
3 . The method of claim 2 , wherein the catch pins pass through the electrically grounded conductive member.
4 . The method of claim 2 , wherein the catch pins are conductive, and wherein the catch pins and the electrically grounded conductive member comprise a same material.
5 . The method of claim 2 , wherein the catch pins are conductive, and wherein supporting the semiconductor wafer along the periphery of the semiconductor wafer with the electrically grounded conductive member comprises supporting the semiconductor wafer continuously along the periphery of the semiconductor wafer with the electrically grounded conductive member and with the catch pins.
6 . The method of claim 1 , wherein the electrically grounded conductive member comprises a conductive metal film, graphene, indium tin oxide (ITO), and/or an intrinsically conductive polymer.
7 . The method of claim 1 , wherein spinning the semiconductor wafer comprises spin-drying the semiconductor wafer, and wherein the method comprises rinsing the semiconductor wafer with de-ionized water before spin-drying the semiconductor wafer.
8 . The method of claim 7 , further comprising performing a process before rinsing the semiconductor wafer, wherein the process is selected from an isopropyl alcohol (IPA) pre-cleaning or cleaning process, a pencil cleaning process, a double pencil cleaning process, and a brush cleaning process.
9 . The method of claim 1 , wherein the electrically grounded conductive member has a thickness from the top surface to an opposite bottom surface, and wherein the thickness is from 0.5 to 20 centimeters (cm).
10 . The method of claim 1 , wherein the top surface has a radial width extending in a radial direction from an inner edge to an outer edge, and wherein the radial width is from 1 to 200 millimeters (mm).
11 . A method comprising:
supporting a semiconductor wafer along a periphery of the semiconductor wafer with an electrically grounded conductive member, wherein the electrically grounded conductive member is annular and has an inner diameter and an outer diameter; and
spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.
12 . A method comprising:
opening catch pins from a conductive chuck ring;
locating a semiconductor wafer on the catch pins;
closing the catch pins, wherein the semiconductor wafer contacts the conductive chuck ring, and wherein the conductive chuck ring extends radially outward from the semiconductor wafer;
holding the semiconductor wafer on the conductive chuck ring; and
spinning the conductive chuck ring to perform a process on the semiconductor wafer.
13 . The method of claim 12 , further comprising:
after spinning the conductive chuck ring to perform the process on the semiconductor wafer, opening the catch pins from the conductive chuck ring; and
removing the semiconductor wafer from the catch pins.
14 . The method of claim 12 , wherein the process comprises a spin-drying process.
15 . The method of claim 12 , further comprising:
dispensing a processing liquid over the semiconductor wafer; and
supplying a processing gas over the semiconductor wafer during spinning to enhance drying of the semiconductor wafer during a drying process, wherein the processing gas comprises an inert gas.
16 . The method of claim 15 , wherein spinning the conductive chuck ring comprises rotating the semiconductor wafer at a rotational speed between 10 RPM and 500 RPM during the drying process.
17 . The method of claim 12 , further comprising dispensing a processing liquid over a top surface of the semiconductor wafer, wherein the processing liquid forms a film having a thickness of about 1 mm on the top surface due to centrifugal force from spinning.
18 . The method of claim 12 , wherein the conductive chuck ring is formed from a material having a resistivity less than 10 8 Ωcm at a temperature range of 30° C. to 180° C.
19 . The method of claim 12 , wherein the conductive chuck ring is formed from a material having a resistivity less than 10 5 Ωcm at a temperature range of 30° C. to 180° C., and wherein the conductive chuck ring has a radial width from an inner cylindrical surface to an outer cylindrical surface, wherein the radial width is from 1 to 200 millimeters, and wherein the inner cylindrical surface is distanced from a central axis of rotation by an inner radius of from 150 to 250 millimeters.
20 . The method of claim 12 , wherein:
the catch pins are conductive;
the catch pins and the conductive chuck ring comprise a same material;
the conductive chuck ring comprises a conductive metal film, graphene, indium tin oxide (ITO), and/or an intrinsically conductive polymer;
the conductive chuck ring has a thickness from a top surface to an opposite bottom surface;
the thickness is from 0.5 to 20 centimeters (cm);
the conductive chuck ring has a top surface with a radial width extending in a radial direction from an inner edge to an outer edge;
the radial width is from 1 to 200 millimeters (mm);
the conductive chuck ring has an inner diameter and an outer diameter;
the inner diameter is from 300 to 500 millimeters; and
the outer diameter is from 301 to 501 millimeters.