IP Library › Granted Patent US 12,573,551
Granted Patent B2
US 12,573,551 · App. 18/529,331 · Granted Mar 10, 2026

Iron-rich permanent magnet

Inventors: Jian-Ping Wang (Shoreview, MN); Md Mehedi (Minneapolis, MN); YanFeng Jiang (Minneapolis, MN); Bin Ma (Roseville, MN); Delin Zhang (Minneapolis, MN); Fan Zhang (Minneapolis, MN); Jinming Liu (Minneapolis, MN)
Assignee: REGENTS OF THE UNIVERSITY OF MINNESOTA
H01F41/0253C01B21/0622H01F1/10C21D2201/05C21D2211/008C22C38/001C22C38/06C22C38/16C22C2200/04C22C2202/02H01F1/0009H01F1/03
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Quick Facts
Patent No.
US 12,573,551
App. No.
18/529,331
Granted
Mar 10, 2026
Kind
B2
Abstract

The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe 16 N 2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

Claims (24)

1 . An iron-nitride material having a polycrystalline microstructure including a plurality of elongated, plate-like crystallographic grains with grain boundaries, comprising an α″-Fe 16 N 2 phase and a body-center-tetragonal (bct) phase comprising Fe and N;

wherein the peak height of the Fe 16 N 2 (220) x-ray diffraction peak is greater than the peak height of the Fe 16 N 2 (202) x-ray diffraction peak of the material.

2 . The iron-nitride material according to claim 1 , wherein at least one of the elongated, plate-like crystallographic grains has a grain aspect ratio of 1.5 or higher.

3 . The iron-nitride material according to claim 1 , wherein at least one of the elongated, plate-like crystallographic grains has a width in a range of from 100 nm to 500 nm and a length in a range of from 1 μm to 5 μm.

4 . The iron-nitride material according to claim 1 , wherein at least one of the elongated, plate-like crystallographic grains comprises a martensite structure.

5 . The iron-nitride material according to claim 4 , wherein the martensite structure comprises any of an α″-Fe 16 N 2 phase and a body-center-tetragonal (bct) phase comprising Fe and N.

6 . The iron-nitride material according to claim 1 , further comprising at least one of Cu and B.

7 . The iron-nitride material according to claim 6 , further comprising a composition of Fe x Cu y B z Al w , wherein: y is in the range of from 1 wt % to 8 wt %, z is in the range of from about 0.01 wt % to about 3 wt %, Al is in the range of from 0.1 wt % to 10 wt %, and x is a remainder of the composition.

8 . The iron-nitride material according to claim 1 , further comprising an antiferromagnetic phase.

9 . The iron-nitride material according to claim 8 , wherein the antiferromagnetic phase comprises Fe x A y , wherein A is N, B, O or a combination thereof, wherein a ratio of x:y is in a range of from about 2:3 to about 3:1.

10 . The iron-nitride material according to claim 1 , further comprising:

a body-centered distorted (BCT) region comprising one or more of the elongated, plate-like crystallographic grains with grain boundaries, wherein the one or more of the elongated, plate-like crystallographic grains comprises at least one of an α″-Fe 16 N 2 phase and a body-centered-tetragonal (bct) phase comprising Fe and N.

11 . The iron-nitride material according to claim 10 , wherein the BCT region comprises at least one of Ga, Al, P, N, O, B and C.

12 . The iron-nitride material according to claim 10 , wherein the BCT region is morphologically elongated so that one or more of the grain boundaries form at least in part planar grain boundaries.

13 . The iron-nitride material according to claim 12 , wherein the iron-nitride material has a crystallographic orientation with respect to a sample orientation parallel to at least one of the planar grain boundaries.

14 . The iron-nitride material according to claim 1 , wherein the iron-nitride material is in a form of any of strip, foil, ribbon, sheet and plate.

15 . The iron-nitride material according to claim 1 , wherein one or more dimensions of the iron-nitride material is 50 μm or more.

16 . The iron-nitride material according to claim 1 , wherein one or more dimensions of the iron-nitride material is 0.1 mm or more.

17 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 3 kOe or higher at room temperature.

18 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 5 kOe or higher at room temperature.

19 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 8 kOe or higher at room temperature.

20 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 10 kOe or higher at room temperature.

21 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 20 kOe or higher at room temperature.

22 . The iron-nitride material according to claim 1 , wherein the material has a coercivity of 30 kOe or higher at room temperature.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2023
From: WANG, JIAN-PING; MEHEDI, MD; JIANG, YANFENG; MA, BIN; ZHANG, DELIN; ZHANG, FAN; LIU, JINMING
To: REGENTS OF THE UNIVERSITY OF MINNESOTA
Reel/Frame 065778/0096 →
Continuity (3)
Continuation 16423516 · May 28, 2019
Provisional Application 62677093 · May 28, 2018
Related Publication 20240112855A1 · Apr 4, 2024
References Cited (5)
US 11875934B2 · Wang · 2024 [cited by examiner]
US 20200038951A1 · Wang · 2020 [cited by examiner]
WO WO2016122712A1 · 2016 [cited by examiner]
WO WO2016122987A1 · 2016 [cited by examiner]
WO WO2018067926A1 · 2018 [cited by examiner]