Acoustic wave device
An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate and including electrode fingers. A portion where adjacent electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction is an intersecting region. The intersecting region includes a central region located in a central portion in a direction in which the electrode fingers extend and first and second edge regions on both sides of the central region in the direction in which the electrode fingers extend. The acoustic wave device further includes dielectric films between the piezoelectric substrate and the electrode fingers in the first and second edge regions. The dielectric films include at least one of hafnium oxide, niobium oxide, tungsten oxide, or cerium oxide.
1 . An acoustic wave device comprising:
a piezoelectric substrate; and
an interdigital transducer (IDT) electrode on or above the piezoelectric substrate and including a plurality of electrode fingers; wherein
a portion where adjacent electrode fingers of the plurality of electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction is an intersecting region, and the intersecting region includes a central region located in a central portion in a direction in which the plurality of electrode fingers extend and a pair of edge regions on both sides of the central region in the direction in which the plurality of electrode fingers extend;
the acoustic wave device further includes a dielectric film between the piezoelectric substrate and the plurality of electrode fingers in the pair of edge regions; and
the dielectric film includes at least one of hafnium oxide, niobium oxide, tungsten oxide, or cerium oxide.
2 . The acoustic wave device according to claim 1 , wherein
a pair of high-acoustic-velocity regions are provided outside the pair of edge regions in the direction in which the plurality of electrode fingers extend; and
an acoustic velocity in the pair of high-acoustic-velocity regions is higher than an acoustic velocity in the central region.
3 . The acoustic wave device according to claim 1 , wherein the piezoelectric substrate includes only a piezoelectric layer.
4 . The acoustic wave device according to claim 1 , wherein
the piezoelectric substrate includes a high-acoustic-velocity material layer and a piezoelectric layer directly or indirectly on the high-acoustic-velocity material layer; and
an acoustic velocity of a bulk wave propagating through the high-acoustic-velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
5 . The acoustic wave device according to claim 4 , wherein
the piezoelectric substrate includes a low-acoustic-velocity film between the high-acoustic-velocity material layer and the piezoelectric layer; and
an acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.
6 . The acoustic wave device according to claim 4 , wherein the high-acoustic-velocity material layer is a high-acoustic-velocity support substrate.
7 . The acoustic wave device according to claim 4 , wherein
the piezoelectric substrate includes a support substrate; and
the high-acoustic-velocity material layer is a high-acoustic-velocity film on the support substrate.
8 . The acoustic wave device according to claim 1 , wherein
the piezoelectric substrate includes an acoustic reflecting film and a piezoelectric layer on the acoustic reflecting film;
the acoustic reflecting film includes a high-acoustic-impedance layer having a relatively high acoustic impedance and a low-acoustic-impedance layer having a relatively low acoustic impedance; and
the high-acoustic-impedance layer and the low-acoustic-impedance layer are alternately laminated.
9 . The acoustic wave device according to claim 3 , wherein the piezoelectric layer is a lithium tantalate layer.
10 . An acoustic wave device comprising:
a piezoelectric substrate including a piezoelectric layer; and
an interdigital transducer (IDT) electrode on or above the piezoelectric substrate and including a plurality of electrode fingers; wherein
a portion where adjacent electrode fingers of the plurality of electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction is an intersecting region, and the intersecting region includes a central region located at a central portion in a direction in which the plurality of electrode fingers extend and a pair of edge regions on both sides of the central region in the direction in which the plurality of electrode fingers extend;
the acoustic wave device further includes a dielectric film between the piezoelectric substrate and the plurality of electrode fingers in the pair of edge regions;
the piezoelectric layer is a lithium tantalate layer,
the IDT electrode includes a main electrode layer, and the main electrode layer is an Al layer; and
where λ [μm] is a wavelength defined by an electrode finger pitch of the IDT electrode, t_D [λ] is a thickness of the dielectric film, ε is a dielectric constant of the dielectric film, d [kg/m 3 ] is a density of the dielectric film, Y [GPa] is a Young's modulus of the dielectric film, t_LT [λ] is a thickness of the piezoelectric layer, t_Al [λ] is a thickness of the main electrode layer of the IDT electrode, Vc is an acoustic velocity in the central region, and Ve is an acoustic velocity in the pair of edge regions, t_D [λ], ε, d [kg/m 3 ], Y [GPa], t_LT [λ], and t_Al [λ] are values that make Ve/Vc derived by a following formula 1 less than 1:
Ve/Vc =1.00431413354797+(−0.00285716659280799)×(( d [kg/m3])−4.66559485530547)+0.0000854138472667538×(( Y [GPa])−163.239549839228)+(−0.000350625383356713)×(ε−20.050911039657)+0.262088599487209×(( t _ D [λ])−0,00998794212218652)+(−000121829646867971)×(( t _ LT [λ])−0.29981243301179)+(−0.0171813623903716)×(( t _ Al [λ])−0.064995980707398)+0.0000011344571772174×((( d [kg/m3])−4.66559485530547)×(( Y [GPa])−163.239549839228))+(−0.0000000938653776651)×((( Y [GPa])−163.239549839228)×(( Y [GPa])−163.239549839228)−7625.27702101924)+0.0000162006962167552×((ε−20.050911039657)×(ε−20.050911039657)−125.050998634098)+(−0.286079428865232)×((( d [kg/m3])−4.66559485530547)×(( t _ D [λ])−0.00998794212218652))+0.00817326864820186×((( Y [GPa])−163.239549839228)×(( t _ D [λ])−0.00998794212218652))+(−0.0221047213078)×((ε−20.050911039657)×(( t _ D [λ])−0.00998794212218652))+(−17.2441046243263)×((( t _ D [λ])−0.00998794212218652)×(( t _ D [λ])−0.00998794212218652)−0.0000249563122710345)+0.00438054956998946×((( d [kg/m3])−4.66559485530547)×(( t _ LT [λ])−0.29981243301179))+(−0.000147617022443897)×((( Y [GPa])−163.239549839228)×(( t _ LT [λ])−0,29981243301179))+(−0.23034817620302)×((( t _ D [λ])−0.00998794212218652)×(( t _ LT [λ])−0.29981243301179))+(−0.0367578157483136)×((( t _ LT [λ])−0.29981243301179)×(( t _ LT [λ])−0.29981243301179)−0.0199865671766099)+0.000409293299970899×((( Y [GPa])−163.239549839228)×(( t _ Al [λ])−0.064995980707398))+(−1.89603355496479)×((( t _ D [λ])−0.00998794212218652)×(( t _ Al [λ])−0.064995980707398))+(−0.0528637488540428)×((( t _ LT [λ])−0.29981243301179)×(( t _ Al [λ])−0.064995980707398)) formula 1.
11 . The acoustic wave device according to claim 2 , wherein
a pair of high-acoustic-velocity regions are provided outside the pair of edge regions in the direction in which the plurality of electrode fingers extend; and
an acoustic velocity in the pair of high-acoustic-velocity regions is higher than an acoustic velocity in the central region.
12 . The acoustic wave device according to claim 10 , wherein the piezoelectric substrate includes only a piezoelectric layer.
13 . The acoustic wave device according to claim 10 , wherein
the piezoelectric substrate includes a high-acoustic-velocity material layer and a piezoelectric layer directly or indirectly on the high-acoustic-velocity material layer; and
an acoustic velocity of a bulk wave propagating through the high-acoustic-velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
14 . The acoustic wave device according to claim 13 , wherein
the piezoelectric substrate includes a low-acoustic-velocity film between the high-acoustic-velocity material layer and the piezoelectric layer; and
an acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.
15 . The acoustic wave device according to claim 13 , wherein the high-acoustic-velocity material layer is a high-acoustic-velocity support substrate.
16 . The acoustic wave device according to claim 13 , wherein
the piezoelectric substrate includes a support substrate; and
the high-acoustic-velocity material layer is a high-acoustic-velocity film on the support substrate.
17 . The acoustic wave device according to claim 10 , wherein
the piezoelectric substrate includes an acoustic reflecting film and a piezoelectric layer on the acoustic reflecting film;
the acoustic reflecting film includes a high-acoustic-impedance layer having a relatively high acoustic impedance and a low-acoustic-impedance layer having a relatively low acoustic impedance; and
the high-acoustic-impedance layer and the low-acoustic-impedance layer are alternately laminated.
18 . The acoustic wave device according to claim 12 , wherein the piezoelectric layer is a lithium tantalate layer.