Method and system for light absorption enhancement in photodiodes using on-chip phase modulating thin-film optics, resonant structures and metasurfaces
A pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. The photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. The thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. The thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. The unidirectional phase-shift may be a unidirectional it phase shift at a target near-infrared light wavelength. The reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. The reflective layer may be a thin-film layer, a Distributed Bragg Reflector layer, or a metal.
1 . A pixel for an image sensor, comprising:
a photodiode comprising a first side and a second side that is opposite the first side, the photodiode receiving incident light on the first side;
a thin-film layer on the first side of the photodiode that provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer; and
a reflective layer on the second side of the photodiode that reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode.
2 . The pixel of claim 1 , wherein the thin-film layer comprises at least one of nanostructures, liquid crystals, a phase-changing material and a thin film formed from metal, ceramic or plastic, and
wherein the unidirectional phase-shift is a unidirectional π phase shift at a target light wavelength.
3 . The pixel of claim 2 , wherein the target light wavelength comprises a near infrared light wavelength.
4 . The pixel of claim 1 , wherein the thin-film layer comprises a periodicity of nanostructures having a distance between the nanostructures that is substantially less than or equal to one-half of a wavelength of light at a predetermined wavelength.
5 . The pixel of claim 4 , wherein the thin-film layer is in direct contact with the photodiode.
6 . The pixel of claim 1 , wherein a material forming the thin-film layer comprises a refractive index that less than a refractive index of material forming the photodiode.
7 . The pixel of claim 1 , wherein the thin-film layer comprises nanostructures that project into the photodiode.
8 . The pixel of claim 1 , wherein the reflective layer comprises a metal layer.
9 . The pixel of claim 1 , wherein the reflective layer comprises a thin-film nanostructure layer that provides a unidirectional phase-shift to light passing from the photodiode to the reflective layer.
10 . The pixel of claim 1 , wherein the reflective layer comprises a Distributed Bragg Reflector layer.
11 . An image sensor, comprising:
an array of pixels, at least one pixel comprising:
a photodiode comprising a first side and a second side that is opposite the first side, the photodiode receiving incident light on the first side;
a thin-film layer on the first side of the photodiode that provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer; and
a reflective layer on the second side of the photodiode that reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode.
12 . The image sensor of claim 11 , wherein the thin-film layer comprises at least one of nanostructures, liquid crystals, a phase-changing material and a thin film formed from metal, ceramic or plastic, and
wherein the unidirectional phase-shift is a unidirectional π phase shift at a target light wavelength.
13 . The image sensor of claim 12 , wherein the target light wavelength comprises a near infrared light wavelength.
14 . The image sensor of claim 11 , wherein the thin-film layer comprises a periodicity of nanostructures having a distance between the nanostructures that is substantially less than or equal to one-half of a wavelength of light at a predetermined wavelength.
15 . The image sensor of claim 14 , wherein the thin-film layer is in direct contact with the photodiode.
16 . The image sensor of claim 11 , wherein a material forming the thin-film layer comprises a refractive index that less than a refractive index of material forming the photodiode.
17 . The image sensor of claim 11 , wherein the thin-film layer comprises nanostructures that project into the photodiode.
18 . The image sensor of claim 11 , wherein the reflective layer comprises a metal layer.
19 . The image sensor of claim 11 , wherein the reflective layer comprises a thin-film nanostructure layer that provides a unidirectional phase-shift to light passing from the photodiode to the reflective layer.
20 . The image sensor of claim 11 , wherein the reflective layer comprises a Distributed Bragg Reflector layer.