Method for annealing bonding wafers
The invention relates to a method for annealing of at least two wafers bonded via low-temperature direct bonding comprising heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., holding the first annealing temperature in a range of 1 to 4 hours, preferably 1 to 3 hours, cooling down the bonded wafers to room temperature, re-heating the bonded wafers to a second annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., and cooling down the bonded wafers to room temperature.
1 . A method for annealing of at least two wafers bonded via low-temperature direct bonding comprising the following steps:
heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C.,
holding the first annealing temperature in a range of 1 to 4 hours, cooling down the bonded wafers to room temperature,
re-heating the bonded wafers to a second annealing temperature in the range of 150° C. to 200° C.,
cooling down the bonded wafers to room temperature,
re-heating the bonded wafers to a third annealing temperature in the range of 100° C. to 500° C., and
cooling down the bonded wafers to room temperature.
2 . The method according to claim 1 , further comprising the step of holding the second and/or third annealing temperature in a range of 2 minutes to 1 hours, before cooling down the bonded wafers to room temperature.
3 . The method according to claim 2 , wherein the second and/or third annealing temperature is the same temperature as the first annealing temperature or is higher or lower than the first annealing temperature within a range of +/−50° C.
4 . The method according to claim 3 , wherein heating to the first and/or second and/or third annealing temperature takes place with a rate of at least 50 K/min.
5 . The method according to claim 4 , wherein cooling down after the first and/or second and/or third annealing temperature takes place with a rate of at least 50 K/min.
6 . The method according to claim 5 , wherein the low-temperature direct bonding is a plasma activated bonding process, a surface activated bonding process, a bonding process under ultra-high vacuum (UHV), a bonding process using a surface activation by chemical-mechanical polishing (CMP) or a bonding process using a surface treatment to achieve chemical activation in hydrolysed tetraalkoxysilanes Si(OR) 4 , hydrolysed tetramethoxysilane Si(OCH 3 ) 4 or nitride acid HNO 3 .
7 . The method according to claim 6 , wherein at least one of the wafers comprises silicon, a metal oxide, a metalloid oxide, or is a glass substrate.
8 . The method according to claim 7 , wherein the steps of heating and/or re-heating are performed using a heat plate, a furnace or a heating lamp.
9 . The method according to claim 1 , further comprising the step of holding the second and/or third annealing temperature in a range of 2 minutes to 1 hours before cooling down the bonded wafers to room temperature.
10 . The method according to claim 1 , wherein the second and/or third annealing temperature is the same temperature as the first annealing temperature or is higher or lower than the first annealing temperature within a range of +/−50° C.
11 . The method according to claim 1 , wherein heating to the first and/or second and/or third annealing temperature takes place with a rate of at least 50 K/min.
12 . The method according to claim 1 , wherein cooling down after the first and/or second and/or third annealing temperature takes place with a rate of at least 50 K/min.