IP Library › Granted Patent US 12,579,631
Granted Patent B2
US 12,579,631 · App. 18/894,596 · Granted Mar 17, 2026

Method to calibrate, predict, and control stochastic defects in EUV lithography

Inventors: Pradeep Vukkadala (Santa Clara, CA); Cao Zhang (Ann Arbor, MI); Anatoly Burov (Austin, TX); Guy Parsey (Ann Arbor, MI); Kyeongeun Ko (Gyeonggi-do, KR); Sergei G. Bakarian (Mountain View, CA); Janez Krek (Milan, MI); Kunlun Bai (Campbell, CA); Craig Higgins (Cedar Park, CA); John S. Graves (Austin, TX); Mark D. Smith (San Jose, CA); John J. Biafore (North Scituate, RI)
Assignee: KLA Corporation
G06T7/0004G06T7/0006G06T2207/20081G06T2207/30148G06T2207/30164G06T2207/30242
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Quick Facts
Patent No.
US 12,579,631
App. No.
18/894,596
Granted
Mar 17, 2026
Kind
B2
Abstract

An initial probability of occurrence of a stochastic defect over an inspection area of a workpiece is received. All locations of the stochastic defects are sorted by the initial probability of occurrence. A cumulative expected defect count is determined and the cumulative expected defect count is normalized to be a fraction of a total expected defect count. A number of defect locations is determined to capture potential stochastic defects above a threshold of total stochastic defects.

Claims (56)

1 . A method comprising:

receiving, at a processor, an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, wherein the initial probability of occurrence of a stochastic defect is generated using a model;

sorting, using the processor, all locations of the stochastic defects by the initial probability of occurrence;

determining, using the processor, a cumulative expected defect count;

normalizing, using the processor, the cumulative expected defect count to be a fraction of a total expected defect count thereby determining a normalized cumulative expected defect count; and

determining, using the processor, a number of defect locations to capture potential stochastic defects above a threshold of total stochastic defects.

2 . The method of claim 1 , further comprising associating the normalized cumulative expected defect count with a total count for the inspection area.

3 . The method of claim 1 , further comprising associating the normalized cumulative expected defect count with the inspection area.

4 . The method of claim 1 , further comprising determining the initial probability of occurrence of a stochastic defect with the model using the processor.

5 . The method of claim 1 , further comprising:

selecting a subset of locations above the threshold using the processor;

grouping the subset of locations by pattern shape using the processor thereby forming pattern shape groups; and

sorting the pattern shape groups by an expected defect count using the processor;

wherein the cumulative expected defect count is based on the pattern shape groups.

6 . The method of claim 1 , further comprising selecting a subset of locations using the processor by probability, wherein the cumulative expected defect count is based on the subset of locations, and wherein the threshold is a fraction of defectivity.

7 . The method of claim 1 , further comprising selecting a subset of locations using the processor by probability, wherein the cumulative expected defect count is based on the subset of locations, and wherein the threshold is a number of locations.

8 . The method of claim 1 , further comprising selecting a subset of locations using the processor by probability, wherein the cumulative expected defect count is based on the subset of locations, and wherein the threshold is a probability value.

9 . The method of claim 1 , further comprising:

selecting, using the processor, one or more of the defect locations above the threshold thereby generating selected defect locations;

grouping, using the processor, the selected defect locations by pattern shapes on the workpiece;

determining, using the processor, pattern sensitivity based on at least one geometric distance in the pattern shapes; and

determining, using the processor, an expected defect count for each of the pattern shapes.

10 . The method of claim 9 , further comprising inspecting a subset of the pattern shapes.

11 . The method of claim 1 , further comprising:

selecting, using the processor, one or more of the defect locations above the threshold thereby generating selected defect locations;

grouping, using the processor, the selected defect locations by pattern shapes on the workpiece;

determining, using the processor, pattern sensitivity based on at least one topological description in the pattern shapes; and

determining, using the processor, an expected defect count for each of the pattern shapes.

12 . The method of claim 11 , further comprising inspecting a subset of the pattern shapes.

13 . A non-transitory computer readable medium storing a program configured to instruct a processor to execute the method of claim 1 .

14 . A system comprising:

an inspection tool configured to image a workpiece; and

a processor in electronic communication with the metrology tool, wherein the processor is configured to:

receive an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, wherein the initial probability of occurrence of a stochastic defect is generated using a model;

sort all locations of the stochastic defects by the initial probability of occurrence;

determine a cumulative expected defect count;

normalize the cumulative expected defect count to be a fraction of a total expected defect count thereby determining a normalized cumulative expected defect count; and

determine a number of defect locations to capture potential stochastic defects above a threshold of total stochastic defects.

15 . The system of claim 14 , wherein the processor is further configured to associate the normalized cumulative expected defect count with a total count for the inspection area or with the inspection area.

16 . The system of claim 14 , wherein the processor is further configured to determine the initial probability of occurrence of a stochastic defect with the model.

17 . The system of claim 14 , wherein the processor is further configured to:

select a subset of locations above the threshold;

group the subset of locations by pattern shape thereby forming pattern shape groups; and

sort the pattern shape groups by an expected defect count;

wherein the cumulative expected defect count is based on the pattern shape groups.

18 . The system of claim 14 , wherein the processor is further configured to select a subset of locations using the processor by probability, wherein the cumulative expected defect count is based on the subset of locations, and wherein the threshold is a fraction of defectivity, a number of locations, or a probability value.

19 . The system of claim 14 , wherein the processor is further configured to:

select one or more of the defect locations above the threshold thereby generating selected defect locations;

group the selected defect locations by pattern shapes on the workpiece;

determine pattern sensitivity based on at least one geometric distance in the pattern shapes; and

determine an expected defect count for each of the pattern shapes.

20 . The system of claim 14 , wherein the processor is further configured to:

select one or more of the defect locations above the threshold thereby generating selected defect locations;

group the selected defect locations by pattern shapes on the workpiece;

determine pattern sensitivity based on at least one topological description in the pattern shapes; and

determine an expected defect count for each of the pattern shapes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2025
From: VUKKADALA, PRADEEP; ZHANG, CAO; BUROV, ANATOLY; PARSEY, GUY; KO, KYEONGEUN; BAKARIAN, SERGEI G.; KREK, JANEZ; BAI, KUNLUN; HIGGINS, CRAIG; GRAVES, JOHN S.; SMITH, MARK D.; BIAFORE, JOHN J.
To: KLA CORPORATION
Reel/Frame 072080/0854 →
Continuity (2)
Provisional Application 63540605 · Sep 26, 2023
Related Publication 20250104215A1 · Mar 27, 2025
References Cited (21)
US 10818001B2 · Leung et al. · 2020 [cited by applicant]
US 10901325B2 · Gurevich et al. · 2021 [cited by applicant]
US 11061373B1 · Khaira et al. · 2021 [cited by applicant]
US 11966156B2 · Vukkadala et al. · 2024 [cited by applicant]
US 20130007684A1 · Kramer · 2013 [cited by examiner]
US 20180275523A1 · Biafore · 2018 [cited by examiner]
US 20180300870A1 · Park · 2018 [cited by examiner]
US 20200082523A1 · Leung · 2020 [cited by examiner]
US 20200161081A1 · Pathangi · 2020 [cited by examiner]
US 20210225609A1 · Mack · 2021 [cited by applicant]
US 20220129775A1 · Burov et al. · 2022 [cited by applicant]
US 20230055365A1 · Kim et al. · 2023 [cited by applicant]
US 20230326710A1 · Eyring · 2023 [cited by applicant]
WO 2023027689A1 · 2023 [cited by applicant]
WIPO, International Search Report and Written Opinion issued for PCT/US2024/048250, Jan. 2, 2025. [cited by applicant]
Latypov et al., Calibration of Gaussian random field stochastic EUV models, Proceedings of SPIE Vol. 12051, Optical and EUV Nanolithography XXXV, 2022, 1205105. [cited by applicant]
Wang et al., Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology, Proceedings of SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 2021, 1160916. [cited by applicant]
De Bisschop, Stochastic printing failures in extreme ultraviolet lithography, Journal of Micro/Nanolithography MEMS, and MOEMS, 2018, Vol. 17, Issue 4, 041011. [cited by applicant]
De Bisschop et al., Empirical correlator for stochastic local CD uniformity in extreme ultraviolet lithography, Journal of Micro/Nanopatterning, Materials, and Metrology, 2022, Vol. 21, Issue 3, 033201. [cited by applicant]
Levinson et al., Predicting very rare stochastic defects in EUVL processes for full-chip correction and verification, Proceedings of SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 2021, 1160915. [cited by applicant]
Halder et al., Process window discovery methodology for extreme ultraviolet (EUV) lithography, Proceedings of SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 2019, 109591V. [cited by applicant]