Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication
Contact over active gate (COAG) structures with conductive trench contact taps are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. One of the plurality of conductive trench contact structures includes a conductive tap structure protruding through the corresponding trench insulating layer. An interlayer dielectric material is above the trench insulating layers and the gate insulating layers. A conductive structure is in direct contact with the conductive tap structure of the one of the plurality of conductive trench contact structures.
1 . An integrated circuit structure, comprising:
a semiconductor fin;
a gate structure over the semiconductor fin, the gate structure having a top surface;
a first source or drain structure on the semiconductor fin at a first side of the gate structure;
a second source or drain structure on the semiconductor fin at a second side of the gate structure, the second side opposite the first side;
a first trench contact structure on the first source or drain structure, the first trench contact structure having a first height above the first source or drain structure, and the first trench contact structure having a top surface below the top surface of the gate structure;
a second trench contact structure on the second source or drain structure, the second trench contact structure having a second height above the second source or drain structure, the second height greater than the first height;
a first insulating layer on the gate structure;
a second insulating layer on the first trench contact structure, wherein a top surface of the second insulating layer is at a same level as a top surface of the first insulating layer, and wherein the top surface of the first insulating layer is at a same level as a top surface of the second contact structure; and
a conductive trench contact tap coupled to the first trench contact structure, the conductive trench contact tap laterally adjacent to and in contact with the second insulating layer.
2 . The integrated circuit structure of claim 1 , wherein the first source or drain structure is a first epitaxial source or drain structure, and the second source or drain structure is a second epitaxial source or drain structure.
3 . The integrated circuit structure of claim 1 , wherein a top surface of the conductive trench contact tap is at a same level as the top surface of the second insulating layer.
4 . The integrated circuit structure of claim 1 , further comprising:
a gate spacer laterally between the first trench contact structure and the gate structure.
5 . The integrated circuit structure of claim 4 , wherein the gate spacer is in contact with the first trench contact structure and the gate structure.
6 . The integrated circuit structure of claim 4 , wherein the gate spacer is in contact with the second insulating layer and the gate structure.
7 . The integrated circuit structure of claim 4 , wherein the gate spacer has a top surface at a same level as the top surface of the second insulating layer.
8 . The integrated circuit structure of claim 4 , further comprising:
a second gate spacer laterally between the second trench contact structure and the gate structure.
9 . The integrated circuit structure of claim 1 , wherein the first trench contact structure and the second trench contact structure comprises a conductive liner and a conductive fill.
10 . An integrated circuit structure, comprising:
a semiconductor fin having a top;
a gate structure over the semiconductor fin, the gate structure having a top surface;
a first source or drain structure on the semiconductor fin at a first side of the gate structure;
a second source or drain structure on the semiconductor fin at a second side of the gate structure, the second side opposite the first side;
a first trench contact structure on the first source or drain structure, the first trench contact structure having a first height above the top of the fin at a first location vertically over the fin, and the first trench contact structure having a top surface below the top surface of the gate structure;
a second trench contact structure on the second source or drain structure, the second trench contact structure having a second height above the top of the fin at a second location vertically over the fin, the second height greater than the first height;
a first insulating layer on the gate structure;
a second insulating layer on the first trench contact structure, wherein a top surface of the second insulating layer is at a same level as a top surface of the first insulating layer, and wherein the top surface of the first insulating layer is at a same level as a top surface of the second contact structure; and
a conductive trench contact tap coupled to the first trench contact structure, the conductive trench contact tap laterally adjacent to and in contact with the second insulating layer, wherein a top surface of the conductive trench contact tap is at a same level as the top surface of the second insulating layer.
11 . The integrated circuit structure of claim 10 , wherein the first source or drain structure is a first epitaxial source or drain structure, and the second source or drain structure is a second epitaxial source or drain structure.
12 . The integrated circuit structure of claim 10 , further comprising:
a first gate spacer laterally between the first trench contact structure and the gate structure; and
a second gate spacer laterally between the second trench contact structure and the gate structure.
13 . The integrated circuit structure of claim 10 , wherein the first trench contact structure and the second trench contact structure comprises a conductive liner and a conductive fill.
14 . An integrated circuit structure, comprising:
a three-dimensional body having a channel region;
a gate structure surrounding the channel region of the three-dimensional body, the gate structure having a top surface;
a first source or drain structure on the three-dimensional body at a first side of the gate structure;
a second source or drain structure on the three-dimensional body at a second side of the gate structure, the second side opposite the first side;
a first trench contact structure on the first source or drain structure, the first trench contact structure having a first height above the first source or drain structure, and the first trench contact structure having a top surface below the top surface of the gate structure;
a second trench contact structure on the second source or drain structure, the second trench contact structure having a second height above the second source or drain structure, the second height greater than the first height;
a first insulating layer on the gate structure;
a second insulating layer on the first trench contact structure, wherein a top surface of the second insulating layer is at a same level as a top surface of the first insulating layer, and wherein the top surface of the first insulating layer is at a same level as a top surface of the second contact structure; and
a conductive trench contact tap coupled to the first trench contact structure, the conductive trench contact tap laterally adjacent to and in contact with the second insulating layer.
15 . The integrated circuit structure of claim 14 , wherein the first source or drain structure is a first epitaxial source or drain structure, and the second source or drain structure is a second epitaxial source or drain structure.
16 . The integrated circuit structure of claim 14 , wherein a top surface of the conductive trench contact tap is at a same level as the top surface of the second insulating layer.
17 . The integrated circuit structure of claim 14 , further comprising:
a gate spacer laterally between the first trench contact structure and the gate structure.
18 . The integrated circuit structure of claim 17 , wherein the gate spacer is in contact with the first trench contact structure and the gate structure.
19 . The integrated circuit structure of claim 17 , wherein the gate spacer is in contact with the second insulating layer and the gate structure.
20 . The integrated circuit structure of claim 17 , wherein the gate spacer has a top surface at a same level as the top surface of the second insulating layer.
21 . The integrated circuit structure of claim 17 , further comprising:
a second gate spacer laterally between the second trench contact structure and the gate structure.
22 . The integrated circuit structure of claim 14 , wherein the first trench contact structure and the second trench contact structure comprises a conductive liner and a conductive fill.