Semiconductor device
A semiconductor device includes a substrate having at least one active region, the at least one active region being defined by an isolation layer, at least one word line extending in a first horizontal direction inside the substrate, the at least one word line crossing the at least one active region, at least one bit line extending in a second horizontal direction orthogonal to the first horizontal direction, the at least one bit line being at a higher vertical level than the at least one word line, and at least one direct contact electrically connecting the at least one bit line to the at least one active region, the at least one direct contact having a maximum width in a third horizontal direction, the third horizontal direction intersecting each of the first horizontal direction and the second horizontal direction at an acute angle.
1 . A semiconductor device, comprising:
a substrate having at least one active region, the at least one active region being defined by an isolation layer;
at least one word line extending in a first horizontal direction inside the substrate, the at least one word line crossing the at least one active region;
at least one bit line extending in a second horizontal direction orthogonal to the first horizontal direction, the at least one bit line being at a higher vertical level than the at least one word line; and
at least one direct contact electrically connecting the at least one bit line to the at least one active region, the at least one direct contact having a maximum width in a third horizontal direction, the third horizontal direction intersecting each of the first horizontal direction and the second horizontal direction at an acute angle.
2 . The semiconductor device as claimed in claim 1 , wherein the at least one direct contact has an oval shape having a long axis extending in the third horizontal direction.
3 . The semiconductor device as claimed in claim 1 , wherein the at least one direct contact has a long axis extending in the third horizontal direction, a shape of the at least one direct contact including a first curve and a second curve recessed with respect to the long axis.
4 . The semiconductor device as claimed in claim 3 , wherein the first curve and the second curve meet on the long axis with a cusp.
5 . The semiconductor device as claimed in claim 3 , wherein the shape of the at least one direct contact further includes a third curve and a fourth curve recessed with respect to the long axis.
6 . The semiconductor device as claimed in claim 1 , wherein:
the third horizontal direction makes a first angle with the first horizontal direction, and
the at least one active region extends in a fourth horizontal direction intersecting at an acute angle with each of the first horizontal direction and the second horizontal direction, the fourth horizontal direction making a second angle greater than the first angle with the first horizontal direction.
7 . The semiconductor device as claimed in claim 1 , wherein:
the at least one active region includes a first impurity region and second impurity regions, the second impurity regions being separated from each other by the first impurity region, and
the at least one direct contact is electrically connected to the first impurity region, the first impurity region having a maximum width in the third horizontal direction.
8 . The semiconductor device as claimed in claim 1 , further comprising an extra pad on the at least one active region, the extra pad being electrically connected to the at least one active region.
9 . The semiconductor device as claimed in claim 1 , further comprising an additional direct contact separated from the at least one direct contact in a diagonal direction intersecting with the first horizontal direction and the second horizontal direction at an acute angle.
10 . A semiconductor device, comprising:
a substrate;
an isolation layer defining an active region in the substrate;
a word line crossing the active region in a first horizontal direction, the word line dividing the active region into a first impurity region and a second impurity region;
a bit line extending on the substrate in a second horizontal direction orthogonal to the first horizontal direction; and
a direct contact electrically connecting the bit line to the first impurity region, the direct contact having a long axis extending in a third horizontal direction intersecting with the first horizontal direction and the second horizontal direction, and a shape of the direct contact includes a first curve and a second curve that meet on the long axis.
11 . The semiconductor device as claimed in claim 10 , wherein the shape of the direct contact is an oval shape.
12 . The semiconductor device as claimed in claim 10 , wherein the first curve and the second curve are recessed with respect to the long axis.
13 . The semiconductor device as claimed in claim 10 , wherein the first curve and the second curve have a cusp on the long axis.
14 . The semiconductor device as claimed in claim 10 , wherein the shape of the direct contact further includes a third curve and a fourth curve, the first to fourth curves being recessed with respect to the long axis.
15 . The semiconductor device as claimed in claim 14 , wherein the first curve and the second curve, the second curve and the third curve, the third curve and the fourth curve, and the fourth curve and the first curve meet with a cusp, respectively.
16 . A semiconductor device, comprising:
a substrate;
an isolation layer in the substrate;
active regions defined by the isolation layer, each of the active regions including a first impurity region and second impurity regions, the second impurity regions being separated from each other by the first impurity region;
word lines extending in a first horizontal direction inside the substrate, each of the word lines crossing between the first impurity region and one of the second impurity regions;
bit lines extending in a second horizontal direction orthogonal to the first horizontal direction, the bit lines being at a higher vertical level than the word lines; and
direct contacts electrically connecting the bit lines to the first impurity regions, each of the direct contacts having a maximum width in a third horizontal direction intersecting with each of the first horizontal direction and the second horizontal direction at an acute angle,
wherein the first impurity region has a maximum width in the third horizontal direction.
17 . The semiconductor device as claimed in claim 16 , wherein each of the direct contacts has an oval shape having a long axis extending in the third horizontal direction.
18 . The semiconductor device as claimed in claim 16 , wherein the active regions extend in a fourth horizontal direction intersecting at an acute angle with the first horizontal direction and the second horizontal direction.
19 . The semiconductor device as claimed in claim 18 , wherein the third horizontal direction makes a first angle with the first horizontal direction, and the fourth horizontal direction makes a second angle greater than the first angle with the first horizontal direction.
20 . The semiconductor device as claimed in claim 16 , wherein the direct contacts are separated from each other in a diagonal direction intersecting with the first horizontal direction and the second horizontal direction at an acute angle.