IP Library › Granted Patent US 12,588,279
Granted Patent B2
US 12,588,279 · App. 17/678,853 · Granted Mar 24, 2026

Arrayed switch circuitry system and switching circuit

Inventors: Jie Zhang (New Taipei City, TW); Sih-Han Li (New Taipei City, TW)
Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
H10D84/907H10D84/938H10D84/948H10D84/975
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Quick Facts
Patent No.
US 12,588,279
App. No.
17/678,853
Granted
Mar 24, 2026
Kind
B2
Abstract

An arrayed switch circuitry includes contact units each of which includes a pad, a first row channel provided with a first switching element, a first column channel connected to the first row channel and provided with a second switching element, a connecting channel connecting the pad to the first row channel or the first column channel, a second row channel connected with the pad through a third switching element and a second column channel connected with the pad through a fourth switching element. The first row channels with the same row position are connected to each other, and the second row channels with the same row position are connected to each other. The first column channels with the same column position are connected to each other, and the second column channels with the same column position are connected to each other.

Claims (45)

1 . An arrayed switch circuitry system, comprising a plurality of contact units arranged as an array, wherein each of the contact units comprises:

a pad;

a first row channel provided with a first switching element;

a first column channel connected to the first row channel and provided with a second switching element;

a connecting channel connected the pad to the first row channel or the first column channel;

a second row channel connected to the pad through a third switching element; and

a second column channel connected to the pad through a fourth switching element;

wherein the first row channel of each of the contact units with the same row position is connected to each other, the second row channel of each of the contact units with the same row position is connected to each other, the first column of each of the contact units with the same column position is connected to each other, and the second column channel of each of the contact units with the same column position is connected to each other,

wherein at least one of the first switching element, the second switching element, the third switching element and the fourth switching element comprises:

a transmission gate comprising an input end, an output end, two gate control ends and two base control ends, and configured to make the input end and the output end conduct or not conduct with each other according to voltages of the two gate control ends; and

a base voltage control sub-circuit connected to the input end and the two base control ends, and configured to adjust voltages of the two base control ends according to a voltage of the input end when the input end and the output end conduct with each other, for a voltage difference between the input end and the two base control ends to be smaller than a default value,

wherein the transmission gate is constituted of two transistors, a source of one of the two transistors and a drain of the other of the two transistors are directly connected to each other to serve as the input end, and a drain of said one of the two transistors and a source of said the other of the two transistors are directly connected to each other to serve as the output end,

wherein the transmission gate is a first transmission gate, the input end is a first input end, the output end is a first output end, the two gate control ends are two first gate control ends, and the base voltage control sub-circuit comprises:

a second transmission gate having a second input end, a second output end and two second gate control ends, wherein the second input end is connected to the first input end, the second output end is connected to a first one of the two base control ends, and the two second gate control ends are respectively connected to the two first gate control ends;

a third transmission gate having a third input end, a third output end and two third gate control ends, wherein the third input end is connected to the first input end, the third output end is connected to a second one of the two base control ends, and the two third gate control ends are respectively connected to the two first gate control ends;

a first transistor having a fourth input end, a fourth output end and a fourth control end, wherein the fourth input end is connected to the second output end, the fourth output end is grounded, and the fourth control end is connected to a first one of the two first gate control ends; and

a second transistor having a fifth input end, a fifth output end and a fifth control end, wherein the fifth input end is configured to receive an operating voltage, the fifth output end is connected to the third output end, and the fifth control end is connected to a second one of the two first gate control ends,

wherein the two transistors of the first transmission gate are a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) and a P-channel MOSFET, each of the second transmission gate and the third transmission gate is constituted of a N-channel MOSFET and a P-channel MOSFET, gates of the N-channel MOSFETs are connected with each other, gates of the P-channel MOSFETs are connected with each other, a base of the N-channel MOSFET included in the first transmission gate serves as the first one of the two base control ends, a gate of the N-channel MOSFET of the first transmission gate serves as the second one of the two first gate control ends, a base of the P-channel MOSFET included in the first transmission gate serves as the second one of the two base control ends, and a gate of the P-channel MOSFET of the first transmission gate serves as the first one of the two first gate control ends.

2 . The arrayed switch circuitry system according to claim 1 , wherein each of the contact units further comprises:

a third row channel provided with a fifth switching element;

a third column channel connected to the third row channel and provided with a sixth switching element;

a fourth row channel connected to the pad through a seventh switching element; and

a fourth column channel connected to the pad through an eighth switching element;

wherein the third row channel is connected to the first row channel through a connecting switching element, or the third column channel is connected to the first column channel through the connecting switching element;

wherein the third row channel of each of the contact units with the same row position is connected to each other, the fourth row channel of each of the contact units with the same row position is connected to each other, the third column of each of the contact units with the same column position is connected to each other, and the fourth column channel of each of the contact units with the same column position is connected to each other.

3 . The arrayed switch circuitry system according to claim 1 , further comprising:

a plurality of extension pads connected to a channel group of each of contact units located at one side of the array among the contact units through a plurality of extension switching elements respectively;

wherein the channel group is composed of the first row channel and the second row channel, or is composed of the first column channel and the second column channel.

4 . The arrayed switch circuitry system according to claim 2 , further comprising:

a plurality of extension pads connected to a channel group of each of contact units located at one side of the array among the contact units through a plurality of extension switching elements respectively;

wherein the channel group is composed of the first row channel, the second row channel, the third row channel and the fourth row channel, or is composed of the first column channel, the second column channel, the third column channel and the fourth column channel.

5 . The arrayed switch circuitry system according to claim 1 , further comprising a memory connected to a plurality of control ends of the first switching element, the second switching element, the third switching element and the fourth switching element, wherein the memory is configured to control and record switching status of the first switching element, the second switching element, the third switching element and the fourth switching element.

6 . The arrayed switch circuitry system according to claim 1 , further comprising:

a memory connected to a plurality of control ends of the first switching element, the second switching element, the third switching element and the fourth switching element; and

a microcontroller connected to the memory and the control ends, the microcontroller configured to control the control ends and perform an alternating current testing according to a control command, and write the control command into the memory after the alternating current testing is passed.

7 . A switching circuit, comprising:

a transmission gate having an input end, an output end, two gate control ends and two base control ends, and configured to make the input end and the output end conduct or not conduct with each other according to voltages of the two gate control ends; and

a base voltage control sub-circuit connected to the input end and the two base control ends, and configured to adjust voltages of the two base control ends according to a voltage of the input end when the input end and the output end conduct with each other, for a voltage difference between the input end and the two base control ends to be smaller than a default value,

wherein the transmission gate is constituted of two transistors, a source of one of the two transistors and a drain of the other of the two transistors are directly connected to each other to serve as the input end, and a drain of said one of the two transistors and a source of said the other of the two transistors are directly connected to each other to serve as the output end,

wherein the transmission gate is a first transmission gate, the input end is a first input end, the output end is a first output end, the two gate control ends are two first gate control ends, and the base voltage control sub-circuit comprises:

a second transmission gate having a second input end, a second output end and two second gate control ends, wherein the second input end is connected to the first input end, the second output end is connected to a first one of the two base control ends, and the two second gate control ends are respectively connected to the two first gate control ends;

a third transmission gate having a third input end, a third output end and two third gate control ends, wherein the third input end is connected to the first input end, the third output end is connected to a second one of the two base control ends, and the two third gate control ends are respectively connected to the two first gate control ends;

a first transistor having a fourth input end, a fourth output end and a fourth control end, wherein the fourth input end is connected to the second output end, the fourth output end is grounded, and the fourth control end is connected to a first one of the two first gate control ends; and

a second transistor having a fifth input end, a fifth output end and a fifth control end, wherein the fifth input end is configured to receive an operating voltage, the fifth output end is connected to the third output end, and the fifth control end is connected to a second one of the two first gate control ends,

wherein the two transistors of the first transmission gate are a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) and a P-channel MOSFET, each of the second transmission gate and the third transmission gate is constituted of a N-channel MOSFET and a P-channel MOSFET, gates of the N-channel MOSFETs are connected with each other, gates of the P-channel MOSFETs are connected with each other, a base of the N-channel MOSFET included in the first transmission gate serves as the first one of the two base control ends, a gate of the N-channel MOSFET of the first transmission gate serves as the second one of the two first gate control ends, a base of the P-channel MOSFET included in the first transmission gate serves as the second one of the two base control ends, and a gate of the P-channel MOSFET of the first transmission gate serves as the first one of the two first gate control ends.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2022
From: ZHANG, JIE; LI, SIH-HAN
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 059096/0167 →
Priority Claims (1)
TW 110141770 · Nov 10, 2021 · national
Continuity (2)
Provisional Application 63166833 · Mar 26, 2021
Related Publication 20220310657A1 · Sep 29, 2022
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