Tight pitch directional selective via growth
A semiconductor interconnect structure and formation thereof. The semiconductor interconnect structure includes a subtractively formed via located on top of a lower level metal line. The subtractively formed via has a bottom portion and a top portion. The semiconductor interconnect structure further includes a selectively grown region formed onto the top portion of the subtractively formed via. A portion of the selectively grown region overhangs the bottom portion of the subtractively formed via in one or more directions.
1 . A semiconductor interconnect structure, comprising:
a via located on top of a lower level metal line, wherein the via includes a bottom portion and a top portion; and
an arc-shaped region located on the top portion of the via, wherein the arc-shaped region overhangs the bottom portion of the via, and wherein the arc-shaped region is visible from a top view of the semiconductor interconnect structure.
2 . The semiconductor interconnect structure of claim 1 , further comprising:
an upper level metal line located on top of the arc-shaped region, wherein the arc-shaped region and the top portion of the via are recessed within the upper level metal line.
3 . The semiconductor structure of claim 2 , wherein the upper level metal line direction runs perpendicular to the lower level metal line direction.
4 . The semiconductor structure of claim 2 , wherein the via electrically connects the lower level metal line to the upper level metal line.
5 . The semiconductor structure of claim 1 , wherein:
the bottom portion of the via is recessed within, and located below a top surface of an interlayer dielectric layer; and
the top portion of the via is located above the top surface of the inter layer dielectric layer.
6 . The semiconductor interconnect structure of claim 1 , wherein the arc-shaped region located on the top portion of the via and the top portion of the via are formed from a same conductive metal material.
7 . The semiconductor interconnect structure of claim 1 , wherein the arc-shaped region located on the top portion of the via and the top portion of the via are formed from different conductive metal materials.
8 . The semiconductor interconnect structure of claim 1 , wherein the lower level metal line and the via comprise a conductive metal material selected from the group consisting of aluminum (Al), ruthenium (Ru), rhodium (Rh), iridium (Ir), tungsten (W), molybdenum (Mo), nickel (Ni), and an alloy thereof.
9 . The semiconductor interconnect structure of claim 1 , wherein the arc-shaped region comprises a conductive metal material selected from the group consisting of copper (Cu), aluminum (Al), ruthenium (Ru), rhodium (Rh), iridium (Ir), tungsten (W), molybdenum (Mo), nickel (Ni), and an alloy thereof.
10 . A method of forming a semiconductor interconnect structure, comprising:
forming a via on top of a lower level metal line, wherein the via includes a bottom portion and a top portion; and
forming an arc-shaped region on the top portion of the via, wherein the arc-shaped region overhangs the bottom portion of the via, and wherein the arc-shaped region is visible from a top view of the semiconductor interconnect structure.
11 . The method of claim 10 , wherein forming the via on top of the lower metal line comprises:
depositing a conductive metal material onto a substrate; and
performing one or more subtractive etch processes to pattern the conductive metal material into the lower level metal line and the via formed on top thereof.
12 . The method of claim 10 , further comprising forming an interlayer dielectric layer, wherein forming the interlayer dielectric comprises:
depositing an interlayer dielectric material onto the lower level metal line and the via; and
recessing the interlayer dielectric material below the top surface of the via.
13 . The method of claim 10 , wherein forming the arc-shaped region on the top portion of the via comprises:
forming a block mask onto a first portion of the top portion of the via; and
depositing, using area selective deposition, a conductive metal material onto a second portion of the top portion of the via left exposed by the block mask.
14 . The method of claim 13 , wherein the conductive metal material is selective to a material of the top portion of the via over a material of the block mask.
15 . The method claim 13 , wherein the arc-shaped region and the top portion of the via comprise a same conductive metal material.
16 . The method of claim 13 , wherein the arc-shaped region and the top portion of the via comprise different conductive metal materials.
17 . The method of claim 13 , wherein the arc-shaped region comprises a conductive metal material selected from the group consisting of copper (Cu) aluminum (Al), ruthenium (Ru), rhodium (Rh), iridium (Ir), tungsten (W), molybdenum (Mo), nickel (Ni), and an alloy thereof.
18 . The method of claim 10 , wherein the lower level metal line and the via comprise a conductive metal material selected from the group consisting of aluminum (Al), ruthenium (Ru), rhodium (Rh), iridium (Ir), tungsten (W), molybdenum (Mo), nickel (Ni), and an alloy thereof.