Generation of physically unclonable function using one-time-programmable memory devices with backside interconnect structures
View Patent ↗A semiconductor device includes a memory cell randomly presenting a first logic state or a second logic state and formed on a first side of a substrate, and a first and a second bit lines formed on a second side of the substrate opposite to the first side. The memory cell includes: a programming transistor having a first and a second source/drain terminals; a first reading transistor having a first source/drain terminal coupled to the first source/drain terminal of the programming transistor; and a second reading transistor having a first source/drain terminal coupled to the second source/drain terminal of the programming transistor. The first bit line is operatively coupled to a second source/drain terminal of the first reading transistor, and the second bit line is operatively coupled to a second source/drain terminal of the second reading transistor.
1 . A memory device, comprising:
a memory cell that randomly presents either a first logic state or a second logic state, wherein the memory cell is formed on a first side of a substrate and comprises:
a programming transistor having a first source/drain terminal, a second source/drain terminal, and a gate terminal operatively connected to a programming word line that is configured to receive a programming voltage;
a first reading transistor having a first source/drain terminal coupled to the first source/drain terminal of the programming transistor; and
a second reading transistor having a first source/drain terminal coupled to the second source/drain terminal of the programming transistor;
a first bit line formed on a second side of the substrate opposite to the first side; and
a second bit line formed on the second side of the substrate and different from the first bit line;
wherein the first bit line is operatively coupled to a second source/drain terminal of the first reading transistor, and the second bit line is operatively coupled to a second source/drain terminal of the second reading transistor.
2 . The memory device of claim 1 , wherein the first reading transistor has a gate terminal operatively connected to a first reading word line, and the second reading transistor has a gate terminal operatively connected to a second reading word line.
3 . The memory device of claim 2 , wherein the gate terminal of the programming transistor has a gate metal and a gate dielectric layer, wherein the gate dielectric layer includes a first portion and a second portion, and wherein the first portion is coupled between the gate metal and the first source/drain terminal of the programming transistor and the second portion is coupled between the gate metal and the second source/drain terminal of the programming transistor.
4 . The memory device of claim 3 , wherein either the first portion or the second portion is configured to be randomly broken down.
5 . The memory device of claim 4 , wherein the first portion is broken down to present the first logic state, and the second portion is broken down to present the second logic state.
6 . The memory device of claim 2 , wherein the programming word line, the first reading word line, and the second reading word line are formed on the first side of the substrate.
7 . A memory system, comprising:
a memory array comprising a plurality of memory cells formed on a first side of a substrate, each of the plurality of memory cells presenting a logic state of either a first logic state or a second logic state and comprising:
a programming transistor comprising a first source/drain terminal, a second source/drain terminal, and a gate terminal operatively connected to a programming word line that is configured to receive a programming voltage;
a first reading transistor comprising a first source/drain terminal operatively coupled to the first source/drain terminal of the programming transistor, and a second source/drain terminal operatively coupled to a first bit line formed on a second side of the substrate opposite to the first side; and
a second reading transistor comprising a first source/drain terminal coupled to the second source/drain terminal of the programming transistor, and a second source/drain terminal coupled to a second bit line formed on the second side of the substrate, the second bit line being different from the first bit line; and
an authentication circuit operatively coupled to the memory array and configured to generate a bit of a Physically Unclonable Function (PUF) signature for each of the plurality of memory cells based on the logic state thereof.
8 . The memory system of claim 7 , wherein the first reading transistor includes a gate terminal operatively coupled to a first reading word line, and the second reading transistor includes a gate terminal operatively coupled to a second reading word line.
9 . The memory system of claim 8 , wherein the gate terminal of the programming transistor includes a gate metal and a gate dielectric layer, and wherein the gate dielectric layer includes a first portion coupled between the gate metal and the first source/drain terminal of the programming transistor, and a second portion coupled between the gate metal and the second source/drain terminal of the programming transistor.
10 . The memory system of claim 9 , wherein the first portion or the second portion of the gate dielectric layer of the programming transistor is configured to be randomly broken down.
11 . The memory system of claim 10 , wherein the logic state of each of the plurality of memory cells is determined based on a preceding breakdown of the first portion or the second portion of the gate dielectric layer of the programming transistor.
12 . The memory system of claim 11 , wherein upon the preceding breakdown of the first portion being identified, the first logic state presents the logic state, and wherein upon the preceding breakdown of the second portion being identified, the second logic state presents the logic state.
13 . The memory system of claim 7 , wherein a first via structure connects the second source/drain terminal of the first reading transistor to the first bit line, and wherein a second via structure connects the second source/drain terminal of the second reading transistor to the second bit line.
14 . The memory system of claim 7 , wherein each of the plurality of memory cells further comprises:
one or more first stage transistors coupled between the programming transistor and the first reading transistor in series; and
one or more second stage transistors coupled between the programming transistor and the second reading transistor in series.
15 . A method for forming a memory device, comprising:
providing a substrate;
forming a memory cell on a first side of the substrate, comprising:
forming, on the first side, a programming transistor having a first source/drain terminal, a second source/drain terminal, and a gate terminal operatively connected to a programming word line that is configured to receive a programming voltage;
forming, on the first side, a first reading transistor having a first source/drain terminal coupled to the first source/drain terminal of the programming transistor; and
forming, on the first side, a second reading transistor having a first source/drain terminal coupled to the second source/drain terminal of the programming transistor;
forming a first bit line formed on a second side of the substrate opposite to the first side; and
forming a second bit line formed on the second side of the substrate and different from the first bit line.
16 . The method of claim 15 , further comprising:
forming a connection between the first bit line and a second source/drain terminal of the first reading transistor.
17 . The method of claim 16 , further comprising:
forming a connection between the second bit line and a second source/drain terminal of the second reading transistor.
18 . The method of claim 15 , wherein the memory cell is configured to randomly present either a first logic state or a second logic state.
19 . The memory device of claim 1 , wherein the memory cell further comprises:
one or more first stage transistors coupled between the programming transistor and the first reading transistor in series; and
one or more second stage transistors coupled between the programming transistor and the second reading transistor in series.
20 . The memory device of claim 1 , further comprising:
a first via structure connecting the second source/drain terminal of the first reading transistor to the first bit line; and
a second via structure connecting the second source/drain terminal of the second reading transistor to the second bit line.