Semiconductor structure and method for forming the same
A semiconductor structure includes a substrate, a contact structure disposed on the substrate, and two first gate structures disposed on the substrate and at two sides of the first contact structure. The contact structure has a T-shaped cross-sectional profile having a first portion contacting the substrate and a second portion disposed on the first portion. A top surface of the second portion of the contact structure is flush with top surfaces of the two first gate structures.
1 . A semiconductor structure, comprising:
a substrate comprising a first region and a second region;
two first gate structures disposed on the first region and a bit line disposed on the second region, wherein each of the first gate structures comprises a first electrode portion and a first hard mask portion disposed on the first electrode portion, the bit line comprises a second electrode portion and a second hard mask portion disposed on the second electrode portion, wherein an inner sidewall of the first hard mask portion locates on a top surface of the first electrode portion and the top surface of the first electrode portion is coplanar with a top surface of the second electrode portion;
a first contact structure disposed on the substrate and between the two first gate structures, wherein the first contact structure has a T-shaped cross-sectional profile having a first portion contacting the substrate and a second portion disposed on the first portion, wherein a width of the second portion is larger than a width of the first portion, wherein a top surface of the second portion of the first contact structure is not higher than top surfaces of the hard mask portions of the two first gate structures, a bottom surface of the first portion is in direct contact with the substrate;
two second contact structures disposed on the substrate at two sides of the-bit line, wherein top surfaces of the two second contact structures are higher than the top surface of the second portion of the first contact structure, bottom surfaces of the two second contact structures are in direct contact with the substrate and lower than the bottom surface of the first portion of the first contact structure;
a passivation layer disposed on the second hard mask portion of the bit line, wherein the two second contact structures directly contact sidewalls of the passivation layer; and
an interlayer dielectric layer disposed on the two first gate structures, the first contact structure, the two second contact structures, and the passivation layer.
2 . The semiconductor structure according to claim 1 , wherein the first electrode portions of the two first gate structures respectively comprise:
a lower gate portion; and
an upper gate portion on the lower gate portion, wherein the first portion of the first contact structure directly contacts an inner sidewall of the lower gate portion and an inner sidewall of the upper gate portion.
3 . The semiconductor structure according to claim 2 , wherein the second portion of the first contact structure directly contacts topmost surfaces of the upper gate portions of the two first gate structures, respectively.
4 . The semiconductor structure according to claim 2 , further comprises:
two inner spacers disposed on the substrate and sandwiched between the first portion of the first contact structure and the two first gate structures, wherein topmost surfaces of the two inner spacers are lower than topmost surfaces of the upper gate portions of the two first gate structures.
5 . The semiconductor structure according to claim 4 , further comprises:
two outer spacers disposed on two sides of the two first gate structures opposite to the inner spacers, wherein an outer sidewall of the lower gate portion and an outer sidewall of the upper gate portion of each of the two first gate structures are fully covered by one of the two outer spacers, and an outer sidewall of the hard mask portions of each of the two first gate structures is at least partially covered by one of the two outer spacers.
6 . The semiconductor structure according to claim 1 , wherein the first contact structure has a one-piece configuration.
7 . The semiconductor structure according to claim 1 , wherein the interlayer dielectric layer is in direct contact with the top surfaces of the hard mask portions of the two first gate structures, the top surface of the second portion of the first contact structure, the top surfaces of the two second contact structures, and a top surface of the passivation layer.