System and method for controlling film thickness, and film deposition system and method using same
Described are various embodiments of a system and method for controlling film thickness, and a film deposition system and method using same. In one such embodiments, a vapour deposition system for spatially controlling a deposited film thickness on a substrate comprises: an emission source; a substrate holder; and a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through a deposition flux according to a designated linear translation profile designated to spatially control the deposited film thickness.
1 . A vapour deposition system for spatially controlling a deposited film thickness on a substrate, the vapour deposition system comprising:
an emission source to emit a deposition flux along a deposition flux axis;
a substrate holder configurable to position the substrate at a designated angle relative to said deposition flux axis; and
a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through said deposition flux according to a designated linear translation designated to spatially control the deposited film thickness, wherein said flux barrier comprises an active flux-blocking region having a curved leading edge, wherein said translatable shutter further comprises an actuator operable to translate said flux barrier according to said designated linear translation at a non-uniform linear velocity;
wherein a curvature of said curved leading edge and said non-uniform linear velocity are designated as a function of said designated angle to enhance a uniformity of the deposited film thickness; and
wherein said active flux-blocking region further comprises a curved tailing edge to act as an opposed leading edge to operate said flux barrier as a bi-directional shutter;
wherein said actuator translates said flux barrier via an unobstructive actuation arm coupled to said active flux-blocking region so not to interfere with either of said leading edge or said tailing edge.
2 . The vapour deposition system of claim 1 , wherein said non-uniform linear velocity and said curvature correspond to a spatially defined non-uniformity of deposition on the substrate.
3 . The vapour deposition system of claim 1 , wherein said linear translation is applied in accordance with a translation axis that is substantially perpendicular to said deposition flux.
4 . The vapour deposition system of claim 1 , wherein said flux barrier comprises a non-uniform width profile, wherein said non-uniform width profile corresponds to said designated angle.
5 . The vapour deposition system of claim 1 , wherein said substrate holder is configurable to position the substrate at multiple designated angles relative to said deposition flux axis, wherein said flux barrier comprises a plurality of barrier modules, each one of which comprising a respective leading edge curvature corresponding to a respective one of said multiple designated angles.
6 . The vapour deposition system of claim 1 , further comprising digital data storage component having stored thereon said designated linear translation, the vapour deposition system further comprising a digital data processor operable to execute translation of said flux barrier via said actuator.
7 . The vapour deposition system of claim 1 , wherein said enhanced uniformity comprises a uniformity enhancement relative to a baseline deposition layer uniformity.
8 . The vapour deposition system of claim 1 , wherein said active flux-blocking region comprises a tapered rectangular portion defined by said leading edge curvature and said curved tailing edge.
9 . The vapour deposition system of claim 8 , wherein said tapered rectangular portion is dimensioned and translatable to block an entirety of the substrate from said deposition.
10 . The vapour deposition system of claim 1 , wherein said leading edge and said tailing edge are defined by respective distinct curvatures.
11 . The vapour deposition system of claim 10 , wherein said respective distinct curvatures are designated for respective distinct designated angles.
12 . The vapour deposition system of claim 1 , wherein translation of said flux barrier according to said designated linear translation is triggered by one of an elapsed initial deposition time or a measured initial deposition accumulation.
13 . The vapour deposition system of claim 1 , wherein the system is operable to fabricate a Josephson Junction.
14 . The vapour deposition system of claim 13 , wherein the Josephson Junction comprises two aluminum vapour deposition layers.
15 . The vapour deposition system of claim 1 , wherein said non-uniform linear velocity is a defined by a polynomial velocity profile.
16 . The vapour deposition system of claim 15 , wherein said polynomial velocity profile comprises at least one polynomial velocity profile for said designated linear translation for a first half of the substrate and a distinct polynomial velocity profile for said designated linear translation for a second half of the substrate.
17 . The vapour deposition system of claim 1 , wherein said actuation arm is disposed on an inactive side of said active flux-blocking region so not to interfere with either of said leading edge or said tailing edge.
18 . The vapour deposition system of claim 1 , wherein said actuator translates said flux barrier via a pair of actuation arms disposed on respective inactive sides of said active flux-blocking region so not to interfere with either of said leading edge or said tailing edge.