Thermal improvements for memory sub-systems
Some memory sub-systems are operated in high temperature and low airflow environments. As a safeguard, thermal throttling may limit throughput on a memory sub-system when a predetermined temperature is reached or exceeded. Improving heat dissipation increases the amount of time a memory sub-system can operate without initiating thermal throttling. Adding a phase-change material (PCM) with a melting temperature above the ambient temperature but below the thermal throttling temperature to a memory sub-system increases the amount of heat the memory sub-system can generate before the temperature reaches the thermal throttling temperature. Thermally coupling components with a heat spreading sheet causes the temperature of the components to vary less than when the components transfer heat by air. Thus, a component that generates less heat may be used to absorb heat generated by another component, increasing the amount of time before any component reaches the thermal throttling temperature.
1 . A memory sub-system, comprising:
a memory component;
a processing device operably coupled to the memory component; and
a phase change material (PCM) in contact with exactly four sides of the memory component to allow cooling of the memory component.
2 . The memory sub-system of claim 1 , further comprising:
a heat spreader thermally coupled to the PCM to dissipate heat from the memory component.
3 . The memory sub-system of claim 2 , wherein the heat spreader is a graphite heat spreader.
4 . The memory sub-system of claim 2 , wherein the heat spreader is a copper heat spreader.
5 . The memory sub-system of claim 2 , wherein the heat spreader is also thermally coupled to the processing device to dissipate heat from the processing device.
6 . The memory sub-system of claim 5 , wherein the heat spreader comprises a thermal isolator that thermally isolates a first portion of the memory sub-system from a second portion of the memory sub-system, the first portion comprising the memory component and the second portion comprising the processing device.
7 . The memory sub-system of claim 1 , further comprising:
heatsink fins thermally coupled to the memory component, wherein the PCM is indirectly coupled to the memory component via the heatsink fins.
8 . The memory sub-system of claim 1 , further comprising:
an enclosure, wherein the PCM is thermally coupled to the enclosure.
9 . The memory sub-system of claim 1 , wherein the PCM increases a time the memory sub-system is able to be used before thermal throttling begins.
10 . The memory sub-system of claim 1 , further comprising a power management integrated circuit (PMIC).
11 . A method of manufacturing a memory sub-system comprising:
adding a memory component to a printed circuit board (PCB);
adding a processing device coupled to the memory component to the PCB; and
applying a phase change material (PCM) to the PCB, such that the PCM is in contact with exactly four sides of the memory component to allow cooling of the memory component.
12 . The method of claim 11 , wherein the PCM is cut to match a shape of the memory component.
13 . The method of claim 11 , further comprising:
applying a heat spreader to the memory sub-system, such that the heat spreader is thermally coupled to the PCM to dissipate heat from the memory component.
14 . The method of claim 13 , wherein the heat spreader is a graphite heat spreader.
15 . The method of claim 13 , wherein the heat spreader is a copper heat spreader.
16 . The method of claim 13 , wherein the heat spreader is also thermally coupled to the processing device to dissipate heat from the processing device.
17 . The method of claim 16 , wherein the heat spreader comprises a thermal isolator that thermally isolates a first portion of the memory sub-system from a second portion of the memory sub-system, the first portion comprising the memory component and the second portion comprising the processing device.
18 . The method of claim 11 , further comprising:
thermally coupling heatsink fins to the memory component, wherein the PCM is indirectly coupled to the memory component via the heatsink fins.
19 . The method of claim 11 further comprising:
enclosing the PCB in an enclosure, wherein the PCM is thermally coupled to the enclosure.
20 . The method of claim 11 , further comprising adding a power management integrated circuit (PMIC) to the PCB.