Multilayer electronic component
A multilayer electronic component may include a body including a capacitance forming portion including a dielectric layer including a plurality of dielectric grains, and a plurality of internal electrodes alternately disposed to be stacked with the dielectric layer; and an external electrode disposed on the body, wherein the plurality of dielectric grains include a first dielectric grain including a nano domain that is a domain region with a major diameter of 10 nm to 100 nm, and a second dielectric grain including a polar nano region including a domain region with a major diameter of less than 10 nm, and when the number of the first dielectric grains included in the capacitance forming portion is ND, and the number of the second dielectric grains included in the capacitance forming portion is RD, 50%<ND/(ND+RD) may be satisfied.
1 . A multilayer electronic component, comprising:
a body including a capacitance forming portion including (i) a dielectric layer including a plurality of dielectric grains, and (ii) a plurality of internal electrodes alternately disposed to be stacked with the dielectric layer; and
an external electrode disposed on the body,
wherein the plurality of dielectric grains include (i) a first dielectric grain including a nano domain that is a domain region with a major diameter of 10 nm to 100 nm, and (ii) a second dielectric grain including a polar nano region including a domain region with a major diameter of less than 10 nm, and
when a number of the first dielectric grain included in the capacitance forming portion is ND, and a number of the second dielectric grain included in the capacitance forming portion is RD, 50%<ND/(ND+RD) is satisfied.
2 . The multilayer electronic component of claim 1 , wherein 66%<ND/(ND+RD) is satisfied.
3 . The multilayer electronic component of claim 1 , wherein the capacitance forming portion comprise a plurality of the nano domain,
wherein a total cross-sectional area of the plurality of the nano domain is 10% or more of a cross-sectional area of the capacitance forming portion.
4 . The multilayer electronic component of claim 1 , wherein the first dielectric grain comprises (i) three or more different nano domains, and (ii) a plurality of domain walls disposed between adjacent nano domains, where at least two of the plurality of domain walls are not parallel to each other.
5 . The multilayer electronic component of claim 4 , wherein a direction of a major diameter of each nano domain among the plurality of nano domains are not parallel.
6 . The multilayer electronic component of claim 1 , wherein the dielectric layer comprises a barium titanate (BaTiO 3 )-based material as a main component.
7 . The multilayer electronic component of claim 1 , wherein an average diameter of the plurality of dielectric grains is 100 nm or more and 300 nm or less.
8 . The multilayer electronic component of claim 1 , wherein the plurality of dielectric grains comprise a plurality of the first dielectric grain, and
an average diameter of the plurality of the first dielectric grain is 100 nm or more and 300 nm or less.
9 . The multilayer electronic component of claim 1 , wherein a major diameter of the nano domain is 26% or more of a diameter of the first dielectric grain.
10 . The multilayer electronic component of claim 1 , wherein an average thickness of the dielectric layer is 0.6 μm or less.
11 . The multilayer electronic component of claim 1 , wherein a length of the multilayer electronic component is 0.6 mm or less and a width of the multilayer electronic component is 0.3 mm or less.
12 . A multilayer electronic component, comprising:
a body including a capacitance forming portion including (i) a dielectric layer including a plurality of dielectric grains, and (ii) a plurality of internal electrodes alternately disposed to be stacked with the dielectric layer; and
an external electrode disposed on the body,
wherein the plurality of dielectric grains include (i) a first dielectric grain including a nano domain that is a domain region with a major diameter of 10 nm to 100 nm, and (ii) a second dielectric grain including a polar nano region including a domain region with a major diameter of less than 10 nm, and
a number of the first dielectric grain included in the capacitance forming portion is greater than a number of the second dielectric grain included in the capacitance forming portion.
13 . The multilayer electronic component of claim 12 , wherein the plurality of dielectric grains comprise a plurality of the first dielectric grain,
an average diameter of the plurality of the first dielectric grain is 100 nm or more and 300 nm or less, and
a total cross-sectional area of a plurality of the nano domain is 10% or more of a cross-sectional area of the capacitance forming portion.
14 . The multilayer electronic component of claim 12 , wherein the first dielectric grain comprises (i) three or more different nano domains, and (ii) a plurality of domain walls disposed between adjacent nano domains, where at least two of the plurality of domain walls are not parallel to each other.
15 . The multilayer electronic component of claim 14 , wherein a direction of a major diameter of each of at least two nano domains among the three or more different nano domains are not parallel.
16 . The multilayer electronic component of claim 12 , wherein a major diameter of the nano domain is 26% or more of a diameter of the first dielectric grain.
17 . The multilayer electronic component of claim 16 , wherein a length of the multilayer electronic component is 0.6 mm or less and a width of the multilayer electronic component is 0.3 mm or less.
18 . A multilayer electronic component, comprising:
a body including a capacitance forming portion including (i) a dielectric layer including a plurality of dielectric grains, and (ii) a plurality of internal electrodes alternately disposed to be stacked with the dielectric layer; and
an external electrode disposed on the body,
wherein the plurality of dielectric grains include (i) a first dielectric grain including a nano domain that is a domain region with a major diameter of 80 nm to 100 nm, and (ii) a second dielectric grain including a polar nano region including a domain region with a major diameter of less than 10 nm.
19 . The multilayer electronic component of claim 18 , wherein a number of the first dielectric grain included in the capacitance forming portion is greater than a number of the second dielectric grain included in the capacitance forming portion.
20 . The multilayer electronic component of claim 19 , wherein the plurality of dielectric grains comprise a plurality of the first dielectric grain,
an average diameter of the plurality of the first dielectric grain is 100 nm or more and 300 nm or less, and
a total cross-sectional area of a plurality of the nano domain is 10% or more of a cross-sectional area of the capacitance forming portion.
21 . The multilayer electronic component of claim 18 , wherein the plurality of dielectric grains is free of a ferroelectric grain.