Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy
A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
1 . A piezoelectric resonator comprising:
a substrate; and
a piezoelectric aluminum nitride layer on the substrate, the piezoelectric aluminum nitride layer doped with Si at a concentration of the Si in a range between 1E17 per cubic centimeter to 3.5E17 per cubic centimeter or Sc at a concentration of the Sc up to 1E19 per cubic centimeter to induce a stress in the piezoelectric aluminum nitride layer in a range between about −150 MPa (compressive) stress and about 300 MPa (tensile) stress;
wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.
2 . The piezoelectric resonator of claim 1 wherein the substrate is SiC.
3 . The piezoelectric resonator of claim 1 wherein the piezoelectric aluminum nitride layer has a stress in a range between about −150 MPa and about 150 MPa.
4 . The piezoelectric resonator of claim 2 wherein the piezoelectric aluminum nitride layer is further doped with a second dopant selected from the group consisting of Mg, Ge, C, and/or Fe.
5 . The piezoelectric resonator of claim 1 wherein the piezoelectric aluminum nitride layer has a crystallinity of less than about 1.5 degrees full Width Half Maximum (FWHM) to about 0.5 degrees at FWHM measured using XRD.
6 . The piezoelectric resonator of claim 1 wherein the substrate is SiC and the piezoelectric aluminum nitride layer is doped with Sc at a concentration of Sc in the piezoelectric aluminum nitride layer between about 1E19/cm3 and about 1E16/cm3.
7 . A piezoelectric resonator material comprising:
a SiC substrate; and
a piezoelectric aluminum nitride layer on the SiC substrate, the piezoelectric aluminum nitride layer doped with a dopant of Si to provide the piezoelectric aluminum nitride layer with a doped concentration of Si in a range between about 1E17/cm3 to about 3.5E17/cm3;
wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.
8 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer has a crystallinity of less than about 1.5 degrees full Width Half Maximum (FWHM) using XRD.
9 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer is further doped with a second dopant selected from the group consisting of Mg, Ge, C, and/or Fe.
10 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer has a tensile stress in a range between about −150 MPa and about 300 MPa.
11 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer is directly on the SiC substrate.
12 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer has a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using XRD.
13 . The piezoelectric resonator material of claim 7 wherein the piezoelectric aluminum nitride layer has a crystallinity in a range between about 400 arcseconds at Full Width Half Maximum (FWHM) and about 10 arcseconds at FWHM measured using XRD.
14 . A piezoelectric resonator material comprising:
a SiC substrate; and
a piezoelectric aluminum nitride layer on the SiC substrate, the piezoelectric aluminum nitride layer doped with Sc to provide the piezoelectric aluminum nitride layer with a doped concentration of Sc that is between about 1E19/cm3 and about 1E16/cm3;
wherein the piezoelectric aluminum nitride layer has a thickness of at least 400 nanometers and no more than 1 micrometer.