Semiconductor memory device including lower contact plug protruding from sidewall spacers
A semiconductor device includes an active pattern on a substrate. A bit line structure is on the active pattern. A spacer structure is on a sidewall of the bit line structure. A lower contact plug directly contacts the spacer structure. The spacer structure includes a first spacer covering an upper sidewall of the lower contact plug and a second spacer covering a lower sidewall of the lower contact plug and a portion of a lower surface of the lower contact plug. The lower contact plug includes an extension portion covered by the first and second spacers and a protrusion portion protruding from the first and second spacers. A bottom surface of the protrusion portion is disposed at a level that is lower than or equal to a level of a bottom surface of the second spacer.
1 . A semiconductor device comprising:
an active pattern on a substrate;
a bit line structure on the active pattern;
a spacer structure on a sidewall of the bit line structure; and
a lower contact plug directly contacting the spacer structure,
wherein the spacer structure includes:
a first spacer covering an upper sidewall of the lower contact plug; and
a second spacer having a first part covering a lower sidewall of the lower contact plug and a second part covering a portion of a lower surface of the lower contact plug, and
wherein the lower contact plug includes:
an extension portion covered by the first and second spacers; and
a protrusion portion protruding from an opening between the first and second parts of the second spacer, a bottom surface of the protrusion portion is disposed at a level that is lower than or equal to a level of a bottom surface of the second spacer.
2 . The semiconductor device according to claim 1 , wherein the level of the bottom surface of the protrusion portion of the lower contact plug is lower than the level of the bottom surface of the second spacer.
3 . The semiconductor device according to claim 1 , wherein the spacer structure includes:
a third spacer directly contacting the sidewall of the bit line structure; and
a fourth spacer directly contacting an outer sidewall of the first spacer, and
wherein an upper outer sidewall of the fourth spacer directly contacts the first spacer, and a lower outer sidewall of the fourth spacer directly contacts the second spacer.
4 . The semiconductor device according to claim 3 , wherein:
each of the first to third spacers includes a nitride; and
the fourth spacer includes air.
5 . The semiconductor device according to claim 1 , wherein:
the bit line structure is one of a plurality of bit line structures spaced apart from each other in a first direction substantially parallel to an upper surface of the substrate, each of the plurality of bit line structures extending in a second direction substantially parallel to the upper surface of the substrate,
the active pattern is one of a plurality of active patterns spaced apart from each other in the first and second directions, each of the plurality of active patterns extending in a third direction substantially parallel to the upper surface of the substrate and having an acute angle with respect to the first and second directions,
each of the plurality of bit line structures is disposed on central portions of ones of the plurality of active patterns, and
the spacer structure is disposed on each of opposite sidewalls in the first direction of each of the plurality of bit line structures, so that a plurality of spacer structures are arranged in the first direction.
6 . The semiconductor device according to claim 5 , wherein:
a first bit line structure among the plurality of bit line structures is disposed on a central portion of a first active pattern among the plurality of active patterns, and a first spacer structure among the plurality of spacer structures is disposed on a sidewall of the first bit line structure,
wherein the protrusion portion of the lower contact plug directly contacting the first spacer structure directly contacts an end portion in the third direction of a second active pattern among the plurality of active patterns, the second active pattern is adjacent to the first active pattern in the first direction.
7 . The semiconductor device according to claim 6 , wherein a level of an upper surface of the central portion of the first active pattern is lower than a level of an uppermost surface of the second active pattern.
8 . The semiconductor device according to claim 6 , wherein:
a second bit line structure among the plurality of bit line structures is disposed on a central portion of the second active pattern, and a second spacer structure among the plurality of spacer structures is disposed on a sidewall of the second bit line structure, the second bit line structure is adjacent to the first bit line structure in the first direction,
wherein an insulation pattern structure is disposed between the second spacer structure and an uppermost surface of the second active pattern.
9 . The semiconductor device according to claim 8 , wherein:
the insulation pattern structure is disposed on a portion of the end portion in the third direction of the second active pattern, and
wherein the insulation pattern structure does not overlap other portions of the end portion of the second active pattern in a vertical direction substantially perpendicular to the upper surface of the substrate.
10 . The semiconductor device according to claim 8 , wherein the second spacer structure covers a sidewall of the insulation pattern structure.
11 . The semiconductor device according to claim 10 , wherein the second spacer structure covers an upper sidewall of the end portion in the third direction of the second active pattern.
12 . The semiconductor device according to claim 8 , further comprising:
an isolation pattern covering sidewalls of the plurality of active patterns,
wherein a portion of the isolation pattern covering a sidewall of the second active pattern directly contacts a lower surface of the insulation pattern structure.
13 . The semiconductor device according to claim 1 , further comprising:
an upper contact plug on the lower contact plug; and
a capacitor on the upper contact plug.
14 . A semiconductor device comprising:
an active pattern on a substrate;
a bit line structure on the active pattern;
a spacer structure on a sidewall of the bit line structure; and
a lower contact plug directly contacting the spacer structure,
wherein the spacer structure includes:
a first spacer covering a sidewall of the bit line structure;
a second spacer directly contacting an outer sidewall of the first spacer;
a third spacer directly contacting an upper outer sidewall of the second spacer; and
a fourth spacer directly contacting a lower outer sidewall of the second spacer, and
wherein the lower contact plug includes:
an extension portion covered by the third and fourth spacers; and
a protrusion portion extending from the third and fourth spacers, a bottom surface of the protrusion portion is disposed at a level that is lower than or equal to a level of a bottom surface of the fourth spacer.
15 . The semiconductor device according to claim 14 , wherein the level of the bottom surface of the protrusion portion of the lower contact plug is lower than the level of the bottom surface of the fourth spacer.
16 . The semiconductor device according to claim 14 , wherein:
each of the first, third and fourth spacers includes a nitride; and
the second spacer includes air.
17 . A semiconductor device comprising:
active patterns disposed on a substrate in first and second directions, the first and second directions being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, and each of the active patterns extending in a third direction substantially parallel to the upper surface of the substrate and having an acute angle with respect to the first and second directions;
bit line structures disposed in the first direction, each of the bit line structures extending in the second direction on central portions in the third direction of ones of the active patterns;
spacer structures on opposite sidewalls, respectively, in the first direction of the bit line structures;
a contact plug structure on an end portion in the third direction of each of the active patterns; and
a capacitor on the contact plug structure,
wherein the contact plug structure includes:
an extension portion covered by the spacer structures; and
a protrusion portion protruding from the spacer structures, a bottom surface of the protrusion portion is disposed at a level that is lower than or equal to a level of a bottom surface of the spacer structures.
18 . The semiconductor device according to claim 17 , wherein:
a first bit line structure among the bit line structures is disposed on a central portion of a first active pattern among the active patterns, and a first spacer structure among the spacer structures is disposed on a sidewall of the first bit line structure,
wherein the protrusion portion of the contact plug structure directly contacting the first spacer structure directly contacts an end portion in the third direction of a second active pattern among the active patterns, the second active pattern is adjacent to the first active pattern in the first direction.
19 . The semiconductor device according to claim 18 , wherein:
a second bit line structure among the bit line structures is disposed on a central portion of the second active pattern, and a second spacer structure among the spacer structures is disposed on a sidewall of the second bit line structure, the second bit line structure is adjacent to the first bit line structure in the first direction,
wherein an insulation pattern structure is disposed between the second spacer structure and an uppermost surface of the second active pattern.
20 . The semiconductor device according to claim 19 , wherein:
the insulation pattern structure is disposed on a portion of the end portion in the third direction of the second active pattern, and
wherein the insulation pattern structure does not overlap other portions of the end portion of the second active pattern in a vertical direction substantially perpendicular to the upper surface of the substrate.