Semiconductor device
A semiconductor device includes a substrate, a gate pattern, and a conductive line pattern. The substrate has a first surface and a second surface and includes an isolation pattern that defines plural pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the pixel regions. The gate pattern of the transistor is disposed on the first surface of the substrate. The conductive line pattern is disposed on the first surface of the substrate and vertically overlaps the isolation pattern in plan view. A top surface of the conductive line pattern is located at the same level as a top surface of the gate pattern, a width of the conductive line pattern is less than a width of the isolation pattern, and the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.
1 . A semiconductor device, comprising:
a substrate having a first surface and a second surface and including an isolation pattern that defines a plurality of pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the plurality of pixel regions;
a gate electrode of the transistor disposed on the first surface of the substrate; and
a conductive line pattern disposed on the first surface of the substrate, the conductive line pattern vertically overlapping the isolation pattern in plan view,
wherein a top surface of the conductive line pattern is located at the same level as a top surface of the gate electrode,
wherein a width of the conductive line pattern is less than a width of the isolation pattern, and
wherein the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.
2 . The semiconductor device of claim 1 , further comprising a dielectric pattern disposed in the substrate and between the isolation pattern and the conductive line pattern.
3 . The semiconductor device of claim 2 , a width of the dielectric pattern is greater than the width of the conductive line pattern.
4 . The semiconductor device of claim 3 , the width of the conductive line pattern ranges from about 10 nm to about 70 nm.
5 . The semiconductor device of claim 1 , further comprising:
a first dielectric layer on the first surface of the substrate;
a gate spacer disposed on sidewalls of the gate electrode and embedded by the first dielectric layer; and
a line spacer disposed on sidewalls of the conductive line pattern and embedded by the first dielectric layer.
6 . The semiconductor device of claim 5 , wherein the gate electrode includes a gate material that is the same as a conductive material of the conductive line pattern.
7 . The semiconductor device of claim 6 , wherein each of the gate material and the conductive material includes doped polysilicone or metal.
8 . The semiconductor device of claim 1 , further comprising a doping region disposed on the first surface of the substrate and in the substrate, the doping region between the isolation pattern and the conductive line pattern.
9 . The semiconductor device of claim 1 , wherein the photoelectric conversion region is configured to receive an incident light through the second surface, wherein the first surface and the second surface face each other.
10 . The semiconductor device of claim 1 , wherein the gate electrode is one of a plurality of gate electrodes, the plurality of gate electrodes on the plurality of pixel regions, respectively, and
wherein the conductive line pattern connects at least two of the plurality of gate electrodes of the plurality of pixel regions through a contact plug.
11 . The semiconductor device of claim 1 , further comprising active regions of the plurality of pixel regions, respectively, the active regions disposed in the substrate,
wherein the conductive line pattern connects the active regions of at least two of the plurality of pixel regions through a contact plug.
12 . The semiconductor device of claim 11 , further comprising:
a dielectric pattern on a bottom surface of the conductive line pattern, and
a gate dielectric pattern on a bottom surface of the gate electrode,
wherein the gate dielectric pattern has a substantially same thickness as a thickness of the dielectric pattern.
13 . The semiconductor device of claim 11 , wherein the conductive line pattern electrically separated from the isolation pattern.
14 . The semiconductor device of claim 11 , wherein a bottom surface of the conductive line pattern is located at a substantially same level as a bottom surface of the gate electrode, and
wherein the top surface of the conductive line pattern is located at a substantially same level as the top surface of the gate electrode.
15 . A semiconductor device, comprising:
a substrate including an isolation pattern that defines a plurality of pixel regions, the substrate including a photoelectric conversion region in each pixel region;
a gate electrode disposed on a first surface of the substrate and vertically overlapping at least one of the plurality of pixel regions; and
a conductive line pattern disposed on the first surface of the substrate, the conductive line pattern vertically overlapping the isolation pattern in plan view,
wherein a height of the conductive line pattern is substantially same as a height of the gate electrode,
wherein a width of the conductive line pattern is less than a width of the isolation pattern, and
wherein the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.