Member for semiconductor manufacturing apparatus
A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a reference surface on which multiple small projections for supporting a wafer are provided and that contains an electrostatic electrode; a plug arrangement hole that is provided in the ceramic plate; an electrostatic electrode opening portion that is provided at a position in the electrostatic electrode through which the plug arrangement hole extends; a cooling plate that is provided on a lower surface of the ceramic plate; a gas hole that extends through the cooling plate and that is in communication with the plug arrangement hole; a plug that is arranged in the plug arrangement hole and that includes a gas flow path; and a raised portion that surrounds the gas flow path and that has a top surface higher than the reference surface and lower than top surfaces of the small projections.
1 . A member for semiconductor manufacturing apparatus comprising:
a ceramic plate that has an upper surface including a wafer placement surface including a reference surface on which multiple small projections for supporting a wafer are provided and that contains an electrostatic electrode;
a plug arrangement hole that extends in an up-down direction and that is provided in the ceramic plate;
an electrostatic electrode opening portion that is provided at a position in the electrostatic electrode through which the plug arrangement hole extends and that has a diameter equal to or larger than that of the plug arrangement hole;
a cooling plate that is provided on a lower surface of the ceramic plate;
a gas hole that extends through the cooling plate in the up-down direction and that is in communication with the plug arrangement hole;
a plug that is arranged in the plug arrangement hole and that includes a gas flow path through which heat conduction gas is to flow in the up-down direction; and
a raised portion that surrounds the gas flow path and that has a top surface higher than the reference surface and lower than top surfaces of the small projections,
wherein the raised portion and the ceramic plate are a one-piece.
2 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein the raised portion includes a plug covering portion that covers an upper surface of the plug, and
wherein the plug covering portion has a small hole that extends therethrough in the up-down direction.
3 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein the plug is a dense body that includes the gas flow path.
4 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein depths from the top surfaces of the small projections to the top surface of the raised portion are no less than ½ and no more than ⅔ of heights from the reference surface to the top surfaces of the small projections.
5 . The member for semiconductor manufacturing apparatus according to claim 1 ,
wherein the raised portion has a ring shape in a plan view, and
wherein an outer diameter of the raised portion is larger than an outer diameter of the gas flow path and is equal to or smaller than the diameter of the electrostatic electrode opening portion.