Method for achieving scalable two-phase cooling plates
Effective two-phase cooling is provided to large devices even with a length of ˜10 cm due to a channel configuration to achieve formed minichannels comprising porous wall structures. Baseplate features comprise a substrate defining the minichannels, with each minichannel formed between a pair of side walls and a bottom surface thereof. The side walls of the plurality of minichannels respectively form terminal walls for each of the respective minichannels. A microgap configuration is formed between the terminal wall of at least one of the plurality of minichannels and an adjacent layer.
1 . Method for achieving effective two-phase cooling on electronic devices having an area of one cm by one cm or larger, comprising integrating at least one minichannel structure directly associated with baseplate features of the electronic devices,
wherein the baseplate features comprise a substrate defining at least one minichannel formed between a pair of side walls and a bottom surface thereof,
the formed minichannel comprises porous wall structures, and
the formed minichannel and substrate are made from copper sintering.
2 . The method according to claim 1 , wherein the minichannel is substantially rectangular in cross-section, such that each of the side walls is substantially perpendicular to the bottom surface.
3 . The method according to claim 1 , wherein the minichannel has width and depth measurements of at least 1 mm by at least 1 mm.
4 . The method according to claim 1 , wherein the substrate comprises one of brass, copper, a copper alloy, nickel, a nickel alloy, or a combination thereof.
5 . The method according to claim 3 , wherein each minichannel has a length of at least 60 mm.
6 . The method according to claim 1 , wherein the electronic devices have an area of up to ten cm by five cm or larger, and the electronic devices comprise commercial electronics or power electronic modules.
7 . The method according to claim 1 , wherein the side walls of the minichannel form at least one terminal wall for the minichannel, and the method further comprises fabricating a microgap configuration between the terminal wall of the minichannel and a layer adjacent thereto.
8 . Th method according to claim 7 , wherein capillary flow is induced by said microgap configuration during associated cooling fluid flow, and wherein the microgap configuration has a thickness of up to 460 um.
9 . The method according to claim 7 , wherein the microgap configuration is at least 60 μm thick.
10 . The method according to claim 1 , wherein the electronic device is operated for dissipating up to 750 Watts, and associated two-phase cooling uses a cooling water flowrate of between 12.5 and 50 ml/min.
11 . The method according to claim 1 , wherein the side walls form reservoir channels.
12 . The method according to claim 11 , wherein the porous wall structures have a porosity of at least 60%, and the reservoir channels are at least 100 um width.
13 . The method according to claim 11 , wherein the porous wall structures have a porosity of at least 65%, and width of each of the reservoir channels is at least 140 μm, and associated two-phase cooling uses a cooling water flowrate of at least 25 ml/min.
14 . Method for achieving effective two-phase cooling on electronic devices having an area of one cm by one cm or larger, comprising defining a plurality of minichannels integrated into a substrate and directly associated with baseplate features of the electronic devices,
wherein each minichannel is formed between a pair of side walls and a bottom surface thereof,
the side walls of the plurality of minichannels respectively form terminal walls for each of the respective minichannels,
the method further comprises fabricating a microgap configuration between the terminal wall of at least one of said plurality of minichannels and a layer adjacent thereto,
capillary flow is induced by said microgap configuration during associated cooling fluid flow, and
wherein the microgap configuration has a thickness of up to 460 um.
15 . Method according to claim 14 , wherein each minichannel is substantially rectangular in cross-section.
16 . The method according to claim 15 , wherein each minichannel has width and depth measurements of at least 1 mm by 1 mm.
17 . Method according to claim 14 , wherein the substrate comprises one of brass, copper, a copper alloy, nickel, a nickel alloy, or a combination thereof.
18 . Method according to claim 14 , wherein the substrate and formed minichannel are fabricated through 3-D printing or through copper sintering.
19 . Method according to claim 18 , wherein the formed minichannel comprises porous wall structures, and the formed minichannel and substrate are made from copper sintering.
20 . The method according to claim 14 , wherein each minichannel has a length of at least 60 mm.
21 . Method according to claim 14 , wherein the electronic devices have an area of up to ten cm by five cm or larger, and the electronic devices comprise commercial electronics or power electronic modules.
22 . Method according to claim 14 , wherein the electronic device is operated for dissipating up to 750 Watts, and associated two-phase cooling uses a cooling water flowrate of between 12.5 and 50 ml/min.
23 . The method according to claim 14 , wherein the formed minichannels comprise porous wall structures with side walls which form reservoir channels.
24 . The method according to claim 23 , wherein the porous wall structures have a porosity of at least 60%, and the reservoir channels are at least 100 pm width.
25 . The method according to claim 24 , wherein the porous wall structures have a porosity of at least 65%, and width of each of the reservoir channels is at least 140 pm, and associated two-phase cooling uses a cooling water flowrate of at least 25 ml/min.