Semiconductor package structure
A semiconductor package structure includes a first redistribution layer, a first semiconductor die, a second through via, a molding material, a second semiconductor die, and a second redistribution layer. The first semiconductor die is disposed over the first redistribution layer and includes a first through via having a first width. The second through via is adjacent to the first semiconductor die and has a second width. The second width is greater than the first width. The molding material surrounds the first semiconductor die and the second through via. The second semiconductor die is disposed over the molding material and is electrically coupled to the first through via and the second through via. The second redistribution layer is disposed over the second semiconductor die.
1 . A semiconductor package structure, comprising:
a first redistribution layer;
a first semiconductor die disposed over the first redistribution layer and comprising a first through via having a first width;
a second through via adjacent to the first semiconductor die and having a second width greater than the first width;
a molding material surrounding the first semiconductor die and the second through via;
a second semiconductor die disposed over the molding material and electrically coupled to the first through via and the second through via; and
a second redistribution layer disposed over the second semiconductor die,
wherein a bottom surface of the molding material is substantially level with a bottom surface of the first semiconductor die.
2 . The semiconductor package structure as claimed in claim 1 , wherein the first width is 2 μm to 18 μm, and the second width is 40 μm to 80 μm.
3 . The semiconductor package structure as claimed in claim 1 , further comprising a bump structure connecting the first semiconductor die and the second semiconductor die.
4 . The semiconductor package structure as claimed in claim 3 , further comprising a third semiconductor die surrounded by the molding material, wherein the third semiconductor die comprises a third through via having a third width less than the second width.
5 . The semiconductor package structure as claimed in claim 1 , further comprising a third redistribution layer disposed between the first semiconductor die and the second semiconductor die and electrically coupling the second semiconductor die to the first through via and the second through via.
6 . The semiconductor package structure as claimed in claim 5 , further comprising a third semiconductor die surrounded by the molding material, wherein the third semiconductor die comprises a third through via having a third width less than the second width.
7 . The semiconductor package structure as claimed in claim 1 , further comprising an interposer disposed between the first redistribution layer and the second semiconductor die and comprising a deep trench capacitor.
8 . The semiconductor package structure as claimed in claim 7 , wherein the interposer comprises the second through via.
9 . The semiconductor package structure as claimed in claim 7 , further comprising a third redistribution layer disposed between the interposer and the second semiconductor die and electrically coupling the second semiconductor die to the deep trench capacitor.
10 . The semiconductor package structure as claimed in claim 1 , further comprising a third through via disposed directly over the second through via and having a third width greater than the first width.
11 . The semiconductor package structure as claimed in claim 10 , further comprising a third redistribution layer disposed between the first semiconductor die and the second semiconductor die and electrically coupled to the second semiconductor die, the first through via, the second through via, and the third through via.
12 . The semiconductor package structure as claimed in claim 1 , further comprising a third through via disposed directly over the first semiconductor die and having a third width greater than the first width.
13 . The semiconductor package structure as claimed in claim 12 , further comprising a third redistribution layer disposed between the second semiconductor die and the second through via and between the first semiconductor die and the third through via.
14 . A semiconductor package structure, comprising:
a first redistribution layer;
a first semiconductor die disposed over the first redistribution layer and comprising a first through via;
a second through via adjacent to the first semiconductor die;
a second semiconductor die disposed over a first portion of the first semiconductor die and electrically coupled to the first through via and the second through via;
a third through via disposed over a second portion of the first semiconductor die; and
a second redistribution layer disposed over the second semiconductor die and electrically coupled to the third through via.
15 . The semiconductor package structure as claimed in claim 14 , wherein the first through via is disposed in the first portion of the first semiconductor die.
16 . The semiconductor package structure as claimed in claim 14 , further comprising a molding material surrounding the first semiconductor die, the second semiconductor die, the second through via, and the third through via.
17 . The semiconductor package structure as claimed in claim 14 , further comprising:
a third redistribution layer disposed between the first semiconductor die and the second semiconductor die;
a first molding material surrounding the first semiconductor die and the second through via; and
a second molding material surrounding the second semiconductor die and the third through via.
18 . The semiconductor package structure as claimed in claim 17 , wherein the third through via electrically couples the third redistribution layer to the second redistribution layer.
19 . A semiconductor package structure, comprising:
a first redistribution layer;
a first semiconductor die disposed over the first redistribution layer;
an interposer disposed over the first redistribution layer and adjacent to the first semiconductor die, wherein the interposer comprises a through via and a deep trench capacitor;
a second semiconductor die disposed over the interposer and electrically coupled to the through via and the deep trench capacitor;
a molding material surrounding the first semiconductor die and the interposer; and
a second redistribution layer disposed over the second semiconductor die,
wherein a bottom surface of the molding material is substantially level with bottom surfaces of the first semiconductor die and the interposer.
20 . The semiconductor package structure as claimed in claim 19 , further comprising a third redistribution layer disposed between the interposer and the second semiconductor die and electrically coupling the second semiconductor die to the deep trench capacitor.