Method for etching film and plasma processing apparatus
An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.
1 . An etching apparatus comprising:
a chamber;
a substrate support disposed in the chamber;
one or more heaters disposed in the substrate support;
a gas supply;
a plasma generator;
a controller configured to perform an etching process comprising a plurality of cycles, each cycle comprising:
controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and
controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask, while the precursor layer is present on the substrate, and
a heater controller configured to adjust an electric power individually provided to the one or more heaters so that a temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles is different from a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles,
wherein the controller is configured to, in the at least one other cycle, etch the film at a position deeper than a position in a depth direction of the film etched in the at least one cycle, and
wherein the heater controller is configured to control the temperature of the substrate during the execution of the etching the film included in the at least one other cycle to be higher than the temperature of the substrate during the execution of the etching the film included in the at least one cycle.
2 . The etching apparatus according to claim 1 , further comprising:
a lower electrode disposed in the substrate support; and
an upper electrode disposed above the substrate support;
wherein the plasma generator includes a first radio frequency power source electrically connected to the lower electrode or the upper electrode.
3 . The etching apparatus according to claim 2 , further comprising:
a second radio frequency power source electrically connected to the lower electrode.
4 . The etching apparatus according to claim 1 , wherein the precursor is a silicon containing precursor or a metal containing precursor.
5 . The etching apparatus according to claim 4 , wherein
the film is an organic film,
the mask is a silicon containing mask, and
the process gas comprises an oxygen containing gas.
6 . The etching apparatus according to claim 4 , wherein
the film is a low-dielectric film, and
the process gas comprises a fluorine containing gas and a nitrogen containing gas.
7 . The etching apparatus according to claim 6 , wherein
the process gas comprises a fluorocarbon gas and a nitrogen gas.
8 . The etching apparatus according to claim 7 , wherein the low-dielectric film is SiCOH film.
9 . The etching apparatus according to claim 4 , wherein
the film is a polycrystalline silicon film, and
the process gas comprises a halogen containing gas and an oxygen containing gas.
10 . The etching apparatus according to claim 9 , wherein the halogen containing gas comprises HBr gas, Cl 2 gas, or SF 6 gas.
11 . The etching apparatus according to claim 4 , wherein
the film is a silicon nitride film, and
the process gas comprises a hydrofluorocarbon gas and an oxygen containing gas.
12 . The etching apparatus according to claim 1 , wherein the precursor is an aminosilane precursor.
13 . The etching apparatus according to claim 1 , wherein the precursor is a tungsten containing precursor.
14 . The etching apparatus according to claim 13 , wherein the tungsten containing precursor comprises tungsten hexafluoride, or tungsten hexachloride.
15 . The etching apparatus according to claim 1 , wherein the precursor is a titanium containing precursor.
16 . The etching apparatus according to claim 15 , wherein the titanium containing precursor comprises titanium tetrafluoride or titanium tetrachloride.
17 . An etching apparatus comprising:
a chamber;
a substrate support disposed in the chamber;
one or more heaters disposed in the substrate support;
a heater controller configured to adjust an electric power individually provided to the one or more heaters;
a gas supply;
a plasma generator;
a controller configured to perform an etching process comprising a plurality of cycles,
wherein the controller, during at least one cycle of the plurality of cycles, is configured to:
control the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and
control the gas supply, the plasma generator and the heater controller to supply a process gas into the chamber and generate a plasma from the process gas in the chamber while maintaining the substrate support at a first temperature, thereby etching the film through the mask;
wherein the controller, during at least one other cycle of the plurality of cycles, is configured to:
control the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on the substrate; and
control the gas supply, the plasma generator and the heater controller to supply a process gas into the chamber and generate a plasma from the process gas in the chamber while maintaining the substrate support at a second temperature different from the first temperature, thereby etching the film through the mask,
wherein the controller is configured to, in the at least one other cycle, etch the film at a position deeper than a position in a depth direction of the film etched in the at least one cycle, and
wherein the heater controller is configured to control the temperature of the substrate during the execution of the etching the film included in the at least one other cycle to be higher than the temperature of the substrate during the execution of the etching the film included in the at least one cycle.
18 . The etching apparatus according to claim 17 , wherein the precursor is an aminosilane precursor.
19 . The etching apparatus according to claim 17 , wherein the precursor is a tungsten containing precursor comprising tungsten hexafluoride or tungsten hexachloride.
20 . The etching apparatus according to claim 17 , wherein the precursor is a titanium containing precursor comprising titanium tetrafluoride or titanium tetrachloride.