Topology-selective nitride deposition method and structure formed using same
A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.
1 . A topology-selective deposition method comprising the steps of:
providing a substrate comprising patterned structures on a surface of the substrate, the patterned structures each comprising a top surface, a bottom surface, and a sidewall surface therebetween;
performing an inhibition step for a first time period, wherein the inhibition process comprises providing an inhibition agent comprising a first nitrogen-containing gas for the first time period to form an inhibited surface on one or more of the top surface, the bottom surface, and the sidewall surface;
performing an activation step comprising providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of the top surface, the bottom surface, and the sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface; and
performing a formation step after the inhibition process and the activation process, providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface,
wherein the deposition promotion agent is provided after the start of the first time period and throughout the formation step,
wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ.
2 . The method according to claim 1 , wherein the inhibition step comprises forming a plasma using the first nitrogen-containing gas.
3 . The method according to claim 1 , wherein the inhibition step comprises thermally activating the first nitrogen-containing gas to react with the surface.
4 . The method according to claim 1 , wherein the activation step comprises forming a plasma using the second nitrogen-containing gas for a second time period, wherein the second time period is after the first time period and before providing the precursor.
5 . The method according to claim 1 , wherein the formation step does not comprise applying a plasma power.
6 . The method according to claim 1 , wherein the first nitrogen-containing gas is selected from the group consisting of a mixture of hydrogen and nitrogen, ammonia, hydrazine, and hydrazine derivatives.
7 . The method according to claim 1 , wherein the second nitrogen-containing gas does not comprise hydrogen.
8 . The method according to claim 7 , wherein the second nitrogen-containing gas is selected from the group consisting of nitrogen (N 2 ), alone or with one or more of argon and helium.
9 . The method according to claim 1 , wherein the second nitrogen-containing gas comprises hydrogen.
10 . The method according to claim 1 , wherein the first nitrogen-containing gas does not comprise hydrogen.
11 . The method according to claim 1 , wherein the material selectively forms on the top surface relative to the bottom surface and the sidewall.
12 . The method according to claim 1 , wherein the material selectively forms on the bottom surface relative to the top surface and the sidewall.
13 . The method according to claim 1 , wherein the material selectively forms on the bottom surface and the top surface relative to the sidewall.
14 . The method according to claim 1 , wherein the precursor is selected from the group consisting of silanes, silylamines, halosilanes, and alkyl and halogen-substituted halines.
15 . The method according to claim 1 , wherein the precursor is selected from the group consisting of halogenated silicon compounds.
16 . The method according to claim 1 , wherein the nitride comprises one or more of silicon nitride, silicon carbon nitride, Titanium nitride (TiN), molybdenum nitride (MON), gallium nitride (GaN), hafnium nitride (HfN), zirconium nitride (ZrN), and tungsten nitride (WN).
17 . The method according to claim 1 , further comprising a post-deposition plasma-treatment step comprising providing nitrogen (N 2 ) and forming a plasma.
18 . The method according to claim 1 , further comprising a step of removing a portion of the material from the sidewall.
19 . A topology-selective deposition method comprising the steps of:
providing a substrate comprising patterned structures on a surface of the substrate, the patterned structures each comprising a top surface, a bottom surface, and a sidewall surface therebetween;
performing an activation step for a first time period, the activation process comprising providing a deposition promotion agent comprising a second nitrogen-containing gas for the first time period to form an activated surface on one or more of the top surface, the bottom surface, and the sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface;
performing an inhibition step comprising providing an inhibition agent comprising a first nitrogen-containing gas after the first time period to form an inhibited surface on one or more of the top surface, the bottom surface, and the sidewall surface; and
performing a formation step after the first time period, providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface,
wherein the inhibition agent is provided throughout the inhibition step and the formation step,
wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ.
20 . The method of claim 19 , wherein the formation step comprises forming a plasma.