IP Library Granted Patent US 12,615,708
Granted Patent B2
US 12,615,708 · App. 18/461,400 · Granted Apr 28, 2026

Switching power converter module with a heat dissipation structure

Inventors: Xiucheng Huang (Torrance, CA); Yingchuan Lei (Shanghai, CN); Weijing Du (Torrance, CA); Yun Zhou (Shenzhen, CN)
Assignee: Navitas Semiconductor Limited
H05K1/0206H05K3/30H05K9/0022H05K2201/1003
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Quick Facts
Patent No.
US 12,615,708
App. No.
18/461,400
Granted
Apr 28, 2026
Kind
B2
Abstract

An electronic device is disclosed. In one aspect, the electronic device includes a printed circuit board (PCB) having a first surface and a second surface opposite the first surface, where the PCB includes a thermally conductive region having a plurality of vias that extend from the first surface to the second surface; a semiconductor device attached to the second surface of the PCB and overlying the thermally conductive region; a transformer having a magnetic core; a shield arranged to partially enclose the transformer and define an opening; and an insert disposed within the opening, attached to the first surface of the PCB and overlying the thermally conductive region.

Claims (39)

1 . An electronic device comprising:

a printed circuit board (PCB) having a first surface and a second surface opposite the first surface, wherein the PCB includes a thermally conductive region having a plurality of vias that extend from the first surface to the second surface;

a semiconductor device attached to the second surface of the PCB and underlying the thermally conductive region;

a transformer having a magnetic core;

a shield arranged to partially enclose the transformer and define an opening, the shield attached to the first surface of the PCB; and

an insert disposed within the opening, attached to the first surface of the PCB and overlying the thermally conductive region.

2 . The electronic device of claim 1 , wherein the insert is formed from copper, aluminum, or an alloy of copper and/or aluminum.

3 . The electronic device of claim 1 , wherein the insert is directly coupled to the shield.

4 . The electronic device of claim 1 , wherein the semiconductor device is a gallium nitride (GaN) switch, or a silicon carbide (SiC) switch, or a silicon switch.

5 . The electronic device of claim 1 , wherein the semiconductor device is a gallium nitride (GaN) diode, or a silicon carbide (SiC) diode, or a silicon diode.

6 . The electronic device of claim 1 , wherein the semiconductor device is electrically coupled to the PCB.

7 . The electronic device of claim 1 , wherein the opening is filled with thermally conductive material.

8 . The electronic device of claim 1 , wherein the insert is thermally coupled to the shield.

9 . The electronic device of claim 1 , wherein a thermally conductive interface is disposed between the shield and the PCB.

10 . The electronic device of claim 1 , wherein a thermally conductive interface is disposed between the PCB and the semiconductor device.

11 . A method of forming an electronic device, the method comprising:

providing a printed circuit board (PCB) having a first surface and a second surface opposite the first surface, wherein the PCB includes a thermally conductive region having a plurality of vias that extend from the first surface to the second surface;

attaching a semiconductor device to the second surface of the PCB, the semiconductor device underlying the thermally conductive region;

providing transformer having a magnetic core;

providing a shield arranged to partially enclose the transformer, the shield defining an opening and attached to the first surface of the PCB;

disposing an insert within the opening; and

attaching the insert to the first surface of the PCB, wherein the insert is disposed in a region overlying the thermally conductive region.

12 . The method of claim 11 , wherein the insert is formed from copper, aluminum, or an alloy of copper and/or aluminum.

13 . The method of claim 11 , wherein the insert is directly coupled to the shield.

14 . The method of claim 11 , wherein the semiconductor device is a gallium nitride (GaN) switch, or a silicon carbide (SiC) switch, or a silicon switch.

15 . The method of claim 11 , wherein the semiconductor device is a gallium nitride (GaN) diode, or a silicon carbide (SiC) diode, or a silicon diode.

16 . The method of claim 11 , wherein the semiconductor device is electrically coupled to the PCB.

17 . The method of claim 11 , wherein the opening is filled with thermally conductive material.

18 . The method of claim 11 , wherein the insert is thermally coupled to the shield.

19 . The method of claim 11 , wherein a thermally conductive interface is disposed between the shield and the PCB.

20 . An electronic device comprising:

a printed circuit board (PCB) having a first surface and a second surface opposite the first surface, wherein the PCB includes a thermally conductive region having a plurality of vias that extend from the first surface to the second surface;

a semiconductor device attached to the second surface of the PCB and underlying the thermally conductive region;

a transformer having a magnetic core;

a shield arranged to partially enclose the transformer and define an opening;

an insert disposed within the opening, attached to the first surface of the PCB and overlying the thermally conductive region; and

wherein:

the shield is disposed on a first side of the PCB; and

the semiconductor device is disposed on a second side of the PCB that is opposite the first side.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 12, 2024
From: HUANG, XIUCHENG; LEI, YINGCHUAN; DU, WEIJING; ZHOU, YUN
To: NAVITAS SEMICONDUCTOR LIMITED
Reel/Frame 067710/0324 →
Continuity (1)
Related Publication 20240098876A1 · Mar 21, 2024
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