Electroluminescence display
The present disclosure relates to an electroluminescence display having enhanced display quality by preventing external light from being reflected. An electroluminescence display according to the present disclosure comprises: a light shielding layer disposed on a substrate, and including a first metal layer and a second metal layer on the first metal layer; a first buffer layer covering the light shielding layer on the substrate; a gate line disposed on the first buffer layer and not overlapped with the light shielding layer, the gate line including a third metal layer and a fourth metal layer on the third metal layer; a passivation layer covering the gate line; a planarization layer on the passivation layer; and an emission element including a first electrode, an emission layer and a second electrode sequentially stacked on the planarization layer.
1 . An electroluminescence display comprising:
a light shielding layer disposed on a substrate, the light shielding layer including a first metal layer and a second metal layer on the first metal layer;
a first buffer layer covering the light shielding layer on the substrate;
a gate line disposed on the first buffer layer and not overlapped with the light shielding layer, the gate line including a third metal layer and a fourth metal layer on the third metal layer;
a passivation layer covering the gate line;
a planarization layer on the passivation layer; and
an emission element including a first electrode, an emission layer and a second electrode sequentially stacked on the planarization layer,
wherein the first metal layer and the third metal layer include a thickness in range of 100 Å to 500 Å,
wherein the second metal layer and the fourth metal layer include a thickness in range of 2,000 Å to 4,000 Å, and
wherein the second electrode includes:
a first cathode layer disposed on the emission layer, the first cathode layer having a first metal material with a thickness in range of 100 Å to 200 Å;
a second cathode layer disposed on the first cathode layer, the second cathode layer including a conductive resin material having a domain material and a dopant; and
a third cathode layer disposed on the second cathode layer, the third cathode layer including a second metal material with a thickness in range of 2,000 Å to 4,000 Å.
2 . The electroluminescence display according to claim 1 , wherein the first metal layer and the third metal layer include a metal oxide material, and
the second metal layer and the fourth metal layer include a metal material.
3 . The electroluminescence display according to claim 1 , wherein the first metal layer include a metal oxide material,
the second metal layer and the fourth metal layer include a first metal material, and
the third metal layer includes a second metal material.
4 . The electroluminescence display according to claim 1 , further comprising: a second buffer layer between the first metal layer and the substrate,
wherein the first metal layer and the third metal layer have a first metal material, and
the second metal layer and the fourth metal layer have a second metal material.
5 . The electroluminescence display according to claim 4 , wherein the first buffer layer and the second buffer layer are disposed between the gate line and the substrate.
6 . The electroluminescence display according to claim 4 , wherein the first buffer layer is patterned to selectively cover the light shielding layer,
the second buffer layer is disposed between the light shielding layer and the substrate without the first buffer layer.
7 . The electroluminescence display according to claim 1 , wherein the light shielding layer includes:
a light shielding region overlapping with a semiconductor layer; and
a signal line region including a data line and a driving current line, and being separated from the light shielding region.
8 . The electroluminescence display according to claim 7 , further comprising:
a semiconductor layer overlapping with the light shielding region of the light shielding layer on the first buffer layer;
a gate insulating layer covering the semiconductor layer; and
a gate electrode, a source electrode and a drain electrode formed of same material as the gate line on the gate insulating layer,
wherein the gate electrode overlaps with a middle portion of the semiconductor layer, the source electrode contacts one side of the semiconductor layer and the drain electrode contact another side of the semiconductor layer.
9 . The electroluminescence display according to claim 8 , wherein the second metal layer of the light shielding layer includes a metal material,
the third metal layer of the source electrode includes a metal material, and
the second metal layer of the data line contacts the third metal layer of the source electrode.
10 . The electroluminescence display according to claim 1 , wherein the first metal layer and the third metal layer include molybdenum-titanium oxide material, and
the second metal layer and the fourth metal layer include any one of copper, aluminum, silver and gold.
11 . The display according to claim 1 , wherein the first metal layer includes molybdenum-titanium oxide material,
the second metal layer and the fourth metal layer include any one of copper, aluminum, silver and gold, and
the third metal layer includes any one of molybdenum, titanium and molybdenum-titanium alloy.
12 . The display according to claim 1 , wherein the first metal layer and the third metal layer include any one of molybdenum, titanium and molybdenum-titanium alloy, and
the second metal layer and the fourth metal layer include at least one of copper, aluminum, silver and gold.
13 . An electroluminescent display, comprising:
a plurality of transistors disposed on a substrate;
a light emitting element electrically coupled to at least one of the transistors;
a light shielding layer including a first layer formed of a first material having a first refractive index and a first thickness, and a second layer formed of a second material having a second refractive index and a second thickness; and
one or more signal lines electrically coupled to corresponding ones of the plurality of transistors, at least one of the signal lines including a third layer formed of a third material having a third refractive index and a third thickness and a fourth layer formed of a fourth material having a fourth refractive index and a fourth thickness,
wherein first light reflected from a first surface of the first layer and second light reflected from a first surface of the second layer contacting a second surface of the first layer being at least partially canceled out,
wherein third light reflected from a first surface of the third layer and fourth light reflected from a first surface of the fourth layer contacting a second surface of the third layer being at least partially canceled out,
wherein the light emitting element includes a first electrode, an emission layer and a second electrode sequentially stacked,
wherein the second electrode includes a first cathode layer disposed on the emission layer, a second cathode layer disposed on the first cathode layer, and a third cathode layer disposed on the second cathode layer, and
wherein fifth light reflected from a first surface of the first cathode layer and sixth light reflected from a first surface of the third cathode layer being at least partially canceled out.
14 . The electroluminescent display according to claim 13 ,
wherein the first material and the third material include a metal oxide material and each of the first thickness and the third thickness is in range of 100 Å to 500 Å, and
wherein the second material and the fourth material include a metal material and each of the second thickness and the fourth thickness is in range of 2,000 Å to 4,000 Å.
15 . The electroluminescence display according to claim 13 ,
wherein the first material includes a metal oxide material and the first thickness is in range of 100 Å to 500 Å,
wherein the second material and the fourth material include a first metal material and each of the second thickness and the fourth thickness is in range of 2,000 Å to 4,000 Å, and
wherein the third material includes a second metal material and the third thickness is in range of 100 Å to 500 Å.
16 . The electroluminescence display according to claim 13 , further comprising:
a first buffer layer between the light shielding layer and the substrate; and
a second buffer layer between the first buffer layer and the at least one of the signal lines, the second buffer layer selectively covering the light shielding layer,
wherein the first layer and the third layer include a first metal material and each of the first thickness and the third thickness is in range of 100 Å to 500 Å, and
the second layer and the fourth layer include a second metal material and each of the second thickness and the fourth thickness is in range of 2,000 Å to 4,000 Å.
17 . The electroluminescence display according to claim 13 , wherein:
the first cathode layer includes a first metal material with a thickness in range of 100 Å to 200 Å,
the second cathode layer includes a conductive resin material having a domain material and a dopant, and
the third cathode layer includes a second metal material with a thickness in range of 2,000 Å to 4,000 Å.
18 . The electroluminescence display according to claim 13 ,
wherein the first material and the third material include molybdenum-titanium oxide material, and
wherein the second material and the fourth material include any one of copper, aluminum, silver and gold.
19 . The electroluminescence display according to claim 13 ,
wherein the first material includes molybdenum-titanium oxide material,
wherein the second material and the fourth material include any one of copper, aluminum, silver and gold, and
wherein the third material includes any one of molybdenum, titanium and molybdenum-titanium alloy.
20 . The electroluminescence display according to claim 13 ,
wherein the first material and the third material include any one of molybdenum, titanium and molybdenum-titanium alloy, and
wherein the second material and the fourth material include at least one of copper, aluminum, silver and gold.