Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same
A method of manufacturing a semiconductor device, including: forming a membrane forming pattern on a substrate; forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern; forming a membrane having a protruding pattern by crystallizing the membrane material layer; forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and transferring the 2D material pattern to a transfer substrate.
1 . A method of manufacturing a semiconductor device, the method comprising:
forming a membrane forming pattern on a substrate;
forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern;
forming a membrane having a protruding pattern by crystallizing the membrane material layer, wherein a width of the protruding pattern of the membrane is less than or equal to a grain size which is formed when the 2D material is grown;
forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and
transferring the 2D material pattern to a transfer substrate.
2 . The method of claim 1 , wherein at least one from among a detector, a transistor, a diode, and a photoelectric device is manufactured by repeating the forming of the 2D material pattern and the transferring of the 2D material pattern to the transfer substrate a plurality of times.
3 . The method of claim 1 , wherein the membrane forming pattern comprises a sacrificial layer pattern, and
wherein the method further comprises removing the sacrificial layer pattern.
4 . The method of claim 1 , wherein the 2D material comprises any one of graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS 2 ).
5 . The method of claim 1 , wherein the substrate comprises a sapphire substrate, and
wherein the membrane comprises crystallized alumina.
6 . A method of manufacturing a semiconductor device, the method comprising:
forming a membrane forming pattern on a substrate;
forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern;
forming a membrane having a protruding pattern by crystallizing the membrane material layer,
wherein a width of the protruding pattern of the membrane is less than or equal to a grain size which is formed when the 2D material is grown;
forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane;
growing a semiconductor material on the 2D material pattern and forming a semiconductor device structure; and
separating the semiconductor device structure from the substrate.
7 . The method of claim 6 , wherein the separating comprises separating the semiconductor device structure from the 2D material pattern.
8 . The method of claim 6 , wherein the separating comprises separating the 2D material pattern from the protruding pattern such that the semiconductor device structure and the 2D material pattern are separated from the substrate.
9 . The method of claim 6 , wherein leg parts of the membrane collapse during the separating such that the semiconductor device structure is separated from the substrate.
10 . The method of claim 6 , further comprising: transferring the separated semiconductor device structure onto a transfer substrate.
11 . The method of claim 10 , wherein the transferring comprises transferring the semiconductor device structure onto the transfer substrate by a fluid self-assembly method.
12 . The method of claim 6 , wherein the semiconductor device structure comprises a light emitting diode (LED) device.
13 . The method of claim 6 , wherein the membrane forming pattern comprises a sacrificial layer pattern, and
wherein the method further comprises removing the sacrificial layer pattern.
14 . The method of claim 6 , wherein the 2D material comprises any one of graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2).
15 . The method of claim 6 , wherein the substrate comprises a sapphire substrate, and
wherein the membrane comprises crystallized alumina.