IP Library › Granted Patent US 12,617,735
Granted Patent B2
US 12,617,735 · App. 18/435,220 · Granted May 5, 2026

Methods to remove an EBC from a substrate and to repair a coated component

Inventors: Anant Achyut Setlur (Niskayuna, NY); Julin Wan (Rexford, NY); Andrea Vozar (Niskayuna, NY); James Edward Murphy (Niskayuna, NY)
Assignee: General Electric Company
C04B41/5353C04B35/80C04B41/5031C04B41/5096C04B41/522C04B41/87C04B41/88C04B41/90C04B41/91C09K13/08F05D2230/80
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Quick Facts
Patent No.
US 12,617,735
App. No.
18/435,220
Granted
May 5, 2026
Kind
B2
Abstract

A method is provided for removing an environmental barrier coating from a coated component. The method may include contacting the coated component with an etchant liquid that comprises 5% by volume to 70% by volume of hydrogen fluoride and a solvent. The hydrogen fluoride reacts with silicon oxide in a thermally grown oxide layer positioned between a bondcoat and the environmental barrier coating. The bondcoat is positioned within the coated component between a silicon-containing substrate and the thermally grown oxide layer, and the bondcoat comprises a silicon-containing material.

Claims (27)

1 . A method for removing an environmental barrier coating from a coated component that includes a silicon-containing substrate, a bondcoat on the silicon-containing substrate and comprising a silicon-containing material, an environmental barrier coating on the bondcoat, and a thermally grown oxide layer positioned between the bondcoat and the environmental barrier coating, the method comprising:

contacting the coated component with an etchant liquid comprising 5% by volume to 70% by volume of hydrogen fluoride and a solvent, wherein the hydrogen fluoride reacts with silicon oxide in the thermally grown oxide layer to thereby remove the thermally grown oxide layer and the environmental barrier coating from the bondcoat.

2 . The method of claim 1 , wherein the bondcoat comprises elemental silicon.

3 . The method of claim 1 , wherein the bondcoat comprises at least 75% by weight of elemental silicon.

4 . The method of claim 1 , wherein contacting the coated component with the etchant liquid comprises submerging the coated component within the etchant liquid.

5 . The method of claim 1 , wherein the etchant liquid comprises 25% by volume to 49% by volume of the hydrogen fluoride.

6 . The method of claim 1 , wherein the solvent comprises water.

7 . The method of claim 6 , wherein the etchant liquid consists essentially of the hydrogen fluoride and water.

8 . The method of claim 1 , wherein the etchant liquid further comprises hydrogen chloride, nitric acid, fluorosilicic acid, hydrogen peroxide, or mixtures thereof.

9 . The method of claim 1 , wherein the etchant liquid further comprises a wetting agent.

10 . The method of claim 1 , wherein contacting the coated component with the etchant liquid, with the etchant liquid having a treatment temperature of 20° C. to 60° C.

11 . The method of claim 1 , further comprising:

after contacting the coated component with the etchant liquid, removing the bondcoat to expose a surface of the silicon-containing substrate.

12 . The method of claim 11 , wherein removing the bondcoat from the substrate comprises contacting the coated component with a mechanical etchant to remove the bondcoat and expose a surface of the silicon-containing substrate.

13 . The method of claim 12 , wherein contacting the coated component with the mechanical etchant comprises mechanically blasting the bondcoat with a plurality of particles for removal of the bondcoat.

14 . The method of claim 13 , wherein the plurality of particles comprises grit particles, glass particles, metal particles, or a mixture thereof.

15 . A method of repairing a coated component, the method comprising:

forming an intermediate component by removing an environmental barrier coating from the coated component according to the method of claim 1 to expose the bondcoat and define an exposed bondcoat;

forming a replacement environmental barrier coating on the intermediate component.

16 . The method of claim 15 , wherein the replacement environmental barrier coating is formed directly on the exposed bondcoat.

17 . The method of claim 15 , further comprising:

after exposing the bondcoat, removing the bondcoat to expose a surface of the silicon-containing substrate to define an exposed silicon-containing substrate; and

forming a replacement bondcoat on the exposed silicon-containing substrate,

wherein the replacement environmental barrier coating is formed on the replacement bondcoat.

18 . The method of claim 17 , wherein removing the bondcoat comprises contacting the intermediate component with a mechanical etchant.

19 . The method of claim 18 , wherein contacting the intermediate component with the mechanical etchant comprises mechanically blasting the bondcoat with a plurality of particles.

20 . The method of claim 17 , wherein the replacement bondcoat comprises mullite.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2024
From: SETLUR, ANANT ACHYUT; WAN, JULIN; VOZAR, ANDREA; MURPHY, JAMES EDWARD
To: GENERAL ELECTRIC COMPANY
Reel/Frame 066405/0470 →
Continuity (1)
Related Publication 20250250209A1 · Aug 7, 2025
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