IP Library › Granted Patent US 12,617,973
Granted Patent B2
US 12,617,973 · App. 18/060,120 · Granted May 5, 2026

Slurry compositions for polishing metal layers, chemical mechanical polishing apparatuses using the same, and methods for fabricating semiconductor devices using the same

Inventors: Yea Rin Byun (Hwaseong-si, KR); In Kwon Kim (Hwaseong-si, KR); Sang Kyun Kim (Hwaseong-si, KR); Hyo San Lee (Seongnam-si, KR); Byung Keun Hwang (Seongnam-si, KR)
Assignee: Samsung Electronics Co., Ltd.
C09G1/02B24B37/044H01L21/3212
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Quick Facts
Patent No.
US 12,617,973
App. No.
18/060,120
Granted
May 5, 2026
Kind
B2
Abstract

Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.

Claims (32)

1 . A slurry composition for chemical mechanical polishing, the slurry composition comprising:

polishing particles in an amount of 0.1% to 10% by weight of the slurry composition and including metal oxides;

an oxidant in an amount of 0.1% to 5% by weight of the slurry composition;

a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition, the thermo-sensitive agent including metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, wherein the thermo-sensitive agent comprises different particles from the polishing particles; and

water,

wherein the slurry composition has a pH of 1 to 8.

2 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent has a thermal conductivity from 15 W/(m·K) to 1,000 W/(m·K).

3 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent further includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.

4 . The slurry composition for chemical mechanical polishing of claim 3 , wherein the thermo-sensitive agent includes alpha iron oxide (α-Fe 2 O 3 ) nanoparticles.

5 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the polishing particles include at least one of silica, alumina, ceria, titania, zirconia, magnesia, germania, and mangania.

6 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the oxidant includes at least one of hydrogen peroxide, hydrogen peroxide-urea, performic acid, peracetic acid, potassium periodate, ammonium peroxymonosulfate, potassium perchlorate, potassium perbromate, and potassium permanganate.

7 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:

a catalyst including an iron (Fe)-containing compound.

8 . The slurry composition for chemical mechanical polishing of claim 7 , wherein the catalyst includes iron (III) nitrate (Fe(NO 3 ) 3 ).

9 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:

an inhibitor including a nitrogen-containing compound.

10 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:

a stabilizer including an acidic compound.

11 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:

a biocide.

12 . A slurry composition for chemical mechanical polishing, the slurry composition comprising:

polishing particles including metal oxide;

an oxidant including a peroxide compound;

a pH adjuster;

a thermo-sensitive agent including metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, wherein the thermo-sensitive agent comprises different particles from the polishing particles; and

water.

13 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the thermo-sensitive agent further includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.

14 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the polishing particles include colloidal silica.

15 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the oxidant includes hydrogen peroxide.

16 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a pH of 1 to 8.

17 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a thermal conductivity of 0.5 W/(m·K) to 1.0 W/(m·K).

18 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition is a slurry composition for polishing a metal film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2022
From: BYUN, YEA RIN; KIM, IN KWON; KIM, SANG KYUN; LEE, HYO SAN; HWANG, BYUNG KEUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 061921/0458 →
Priority Claims (1)
KR 10-2021-0183723 · Dec 21, 2021 · national
Continuity (1)
Related Publication 20230193080A1 · Jun 22, 2023
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